大规模鲁棒多功能垂直排列MoS $_2$光忆阻器
Large-Scale and Robust Multifunctional Vertically-Aligned MoS$_2$ Photo-Memristors
摘要：
忆阻器件由于其在非易失性存储器和神经形态计算中的潜在应用而引起了广泛的研究关注。电阻开关器件与光响应材料的结合被认为是一种将光学信息与电路集成的新方法。另一方面，2D材料由于其独特的晶体结构而吸引了大量的考虑，如其化学和物理性质所反映的。虽然不是主要的焦点，但范德华固体被证明是忆阻器件的潜在候选者。在该方案中，大多数电阻开关器件在通过机械剥离获得的平面薄片上实现。在这里，我们利用一个简单和强大的方法来生长大规模的垂直对齐的MoS $_2$（VA-MoS $_2$）薄膜上的标准硅衬底。具有银/VA-MoS $_2$ /Si结构的忆阻器件被示出具有低的开启电压（<0.5V）、长的保持时间（$>2\times10^4$ s）和高的热稳定性（高达350 $^\circ$ C）。所提出的忆阻器件还表现出长时程增强/抑制（LTP/LTD）和光敏记忆状态。大规模的制造，连同低工作电压，高热稳定性，光响应行为和长期增强/抑制，使这种方法非常有吸引力的现实生活中的非易失性存储器应用。
英文摘要：
Memristive devices have drawn considerable research attention due to their potential applications in non-volatile memory and neuromorphic computing. The combination of resistive switching devices with light-responsive materials is considered a novel way to integrate optical information with electrical circuitry. On the other hand, 2D materials have attracted substantial consideration thank to their unique crystal structure, as reflected in their chemical and physical properties. Although not the major focus, van der Waals solids were proven to be potential candidates in memristive devices. In this scheme, the majority of the resistive switching devices were implemented on planar flakes, obtained by mechanical exfoliation. Here we utilize a facile and robust methodology to grow large-scale vertically aligned MoS$_2$ (VA-MoS$_2$) films on standard silicon substrates. Memristive devices with the structure silver/VA-MoS$_2$/Si are shown to have low set-ON voltages (<0.5V), large-retention times ($>2\times10^4$ s) and high thermal stability (up to 350 $^\circ$C). The proposed memristive device also exhibits long term potentiation / depression (LTP/LTD) and photo-active memory states. The large-scale fabrication, together with the low operating voltages, high thermal stability, light-responsive behaviour and long-term potentiation/depression, makes this approach very appealing for real-life non-volatile memory applications.
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