arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1202.4786cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el
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通过合金化LaTMO3(TM = Ti、V、Cr、Mn、Co、Ni和Al)在铁电体Bi4Ti3O12中的带隙调谐

Band gap tuning in ferroelectric Bi4Ti3O12 by alloying LaTMO3 (TM = Ti, V, Cr, Mn, Co, Ni, and Al)

Woo Seok Choi, Ho Nyung Lee

摘要:

采用脉冲激光外延法在SrTiO 3基片上制备了LaTMO 3(TM = Al,Ti,V,Cr,Mn,Co,Ni)定点取代的Bi 4 Ti 3 O 12(BiT)单晶薄膜。当过渡金属掺入到BiT的某个位置时,一些BiT-LaTMO 3显示出显著减小的带隙,这来自氧2 p和TM 3d态之间的额外光学跃迁。具体而言,所有具有莫特绝缘体的合金都显示出带隙减小的可能性。其中,BiT-LaCoO 3显示出最大的带隙减小约1 eV,将其自身定位为用于高效光电器件的有前途的材料。

英文摘要:

We fabricated ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaTMO3 (TM = Al, Ti, V, Cr, Mn, Co, and Ni) on SrTiO3 substrates by pulsed laser epitaxy. When transition metals are incorporated into a certain site of the BiT, some of BiT-LaTMO3 showed a substantially decreased band gap, coming from the additional optical transition between oxygen 2p and TM 3d states. Specifically, all alloys with Mott insulators revealed a possibility of band gap reduction. Among them, BiT-LaCoO3 showed the largest band gap reduction by ~1 eV, positioning itself as a promising material for highly efficient opto-electronic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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