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arXiv 1201.5243cond-mat.mtrl-sci
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多晶金上石墨烯掺杂区的第一性原理和扫描隧道谱研究

Domains of doping in graphene on polycrystalline gold: first-principles and scanning tunneling spectroscopy studies

J. Slawinska, I. Wlasny, P. Dabrowski, Z. Klusek, I. Zasada

摘要:

我们利用密度泛函理论和扫描隧道谱对石墨烯/金界面进行了研究。石墨烯和下面的金表面之间的弱相互作用在带结构中留下未扰动的狄拉克锥,但是它们可以相对于整个系统的费米能级移动,这导致石墨烯的有效掺杂。DFT计算表明,界面对吸附距离和金属表面结构非常敏感,特别是掺杂的强烈变化可以归因于衬底原子的特定重排,例如晶体取向的变化,表面的弛豫或其他修饰。另一方面,STS实验表明,在样品的不同位置测量的局部态密度(LDOS)的变化方面的能量异质性的存在。零掺杂和p型掺杂的随机重复区域已分别从抛物线形状特征和明确定义的狄拉克点中确定。石墨烯在金上的掺杂域似乎与样品中存在的各种类型的表面结构有关。石墨烯与Au相互作用的DFT模拟表明,所考虑的衬底结构诱导的掺杂存在很大差异,与实验结果一致。所有这些结果都表明了工程石墨烯的电子性质的可能性,特别是调整整个薄片的掺杂,这对于石墨烯在电子器件中的应用是有用的。

英文摘要:

We have studied the graphene/gold interface by means of density functional theory (DFT) and scanning tunneling spectroscopy (STS). Weak interaction between graphene and the underlying gold surface leaves unperturbed Dirac cones in the band-structure, but they can be shifted with respect to the Fermi level of the whole system, which results in effective doping of graphene. DFT calculations revealed that the interface is extremely sensitive to the adsorption distance and to the structure of metal's surface, in particular strong variation in doping can be attributed to the specific rearrangements of substrate's atoms, such as the change in the crystallographic orientation, relaxation or other modifications of the surface. On the other hand, STS experiments have shown the presence of energetic heterogeneity in terms of the changes in the local density of states (LDOS) measured at different places on the sample. Randomly repeated regions of zero-doping and p-type doping have been identified from parabolic shape characteristics and from well defined Dirac points, respectively. The doping domains of graphene on gold seem to be related to the presence of various types of the surface structure across the sample. DFT simulations for graphene interacting with Au have shown large differences in doping induced by considered structures of substrate, in agreement with experimental findings. All these results demonstrate the possibility of engineering the electronic properties of graphene, especially tuning the doping across one flake which can be useful for applications of graphene in electronic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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