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arXiv 1201.0033cond-mat.str-el
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轻掺杂La_{2-x} Sr_{x}电荷响应的记忆效应

Memory Effects in the Charge Response of Lightly Doped La_{2-x}Sr_{x}CuO_{4}

I. Raičević, Dragana Popović, C. Panagopoulos, T. Sasagawa

摘要:

利用几种实验方案研究了单晶La_{1.97} Sr_{0.03} CuO_{4}在低温T下的面内磁电阻(MR)。在T远低于自旋-玻璃化转变温度时,MR变为正的,并表现出几种玻璃化特征,如历史依赖性、记忆性和滞后性。这些观察结果与先前报道的面外电阻的行为定性相似。结果表明,在MR的记忆效应有关的玻璃化的掺杂空穴的动力学的发病。

英文摘要:

The in-plane magnetoresistance (MR) of a single crystal La_{1.97}Sr_{0.03}CuO_{4} has been studied at low temperatures T using several experimental protocols. At T well below the spin-glass transition temperature, the MR becomes positive and exhibits several glassy features, such as history dependence, memory and hysteresis. These observations are qualitatively similar to the previously reported behavior of the out-of-plane resistance. The results suggest that the memory effects in the MR are related to the onset of glassiness in the dynamics of doped holes.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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