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arXiv 1111.2569cond-mat.mtrl-scicond-mat.mes-hall
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用GW方法研究金属-分子界面的电子能级排列

Electronic energy level alignment at metal-molecule interfaces with a GW approach

Isaac Tamblyn, Pierre Darancet, Su Ying Quek, Stanimir A. Bonev, Jeffrey B. Neaton

摘要:

采用密度泛函理论和GW近似下的多体微扰理论,计算了苯二胺(BDA)吸附在Au(111)表面的金属-分子界面的电子结构.通过与光电子能谱数据的直接比较,我们表明,传统的G $_0$ W $_0$的方法可以低估的吸附分子共振相对于金费米能级的能量高达0.8 eV。这种差异的来源是双重的:0.7 eV的气相电离能(IE)低估,和0.2 eV的Au功函数高估。在GW框架内的自能计算,占在Au功函数和BDA气相IE的偏差的改进可以导致在定量协议与实验的界面电子能级对准。

英文摘要:

Using density functional theory and many-body perturbation theory within a GW approximation, we calculate the electronic structure of a metal-molecule interface consisting of benzene diamine (BDA) adsorbed on Au(111). Through direct comparison with photoemission data, we show that a conventional G$_0$W$_0$ approach can underestimate the energy of the adsorbed molecular resonance relative to the Au Fermi level by up to 0.8 eV. The source of this discrepancy is twofold: a 0.7 eV underestimate of the gas phase ionization energy (IE), and a 0.2 eV overestimate of the Au work function. Refinements to self-energy calculations within the GW framework that account for deviations in both the Au work function and BDA gas-phase IE can result in an interfacial electronic level alignment in quantitative agreement with experiment.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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