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arXiv 1109.0708cs.AR
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一种新的热分析方法&三维存储器集成

A Novel Methodology for Thermal Analysis & 3-Dimensional Memory Integration

Annmol Cherian, Ajay Augustine, Jemy Jose, Vinod Pangracious

摘要:

半导体工业在几个发展趋势中正达到一个迷人的汇合点,这将可能导致计算机系统的设计、实现、缩放和使用方面的许多革命性变化。然而,最近摩尔定律已经停滞不前,因为器件尺寸超过65 nm是不实际的。2D集成存在内存延迟、功耗和占用空间大等问题。3D技术是2D集成带来的问题的解决方案。温度危机问题限制了3D技术的应用。因此,发展一种精确的功率分布提取方法对三维结构设计具有重要意义。在本文中,3D集成的存储器的设计被认为是,因此静态功耗的存储单元的晶体管级分析,并用于准确地建模的层间热效应的3D存储器堆叠。随后,封装的芯片被认为是使用架构级模拟器和建模。该建模旨在以更高的精度分析3D存储器的热效应,其可靠性和芯片的寿命。

英文摘要:

The semiconductor industry is reaching a fascinating confluence in several evolutionary trends that will likely lead to a number of revolutionary changes in the design, implementation, scaling, and the use of computer systems. However, recently Moore's law has come to a stand-still since device scaling beyond 65 nm is not practical. 2D integration has problems like memory latency, power dissipation, and large foot-print. 3D technology comes as a solution to the problems posed by 2D integration. The utilization of 3D is limited by the problem of temperature crisis. It is important to develop an accurate power profile extraction methodology to design 3D structure. In this paper, design of 3D integration of memory is considered and hence the static power dissipation of the memory cell is analysed in transistor level and is used to accurately model the inter-layer thermal effects for 3D memory stack. Subsequently, packaging of the chip is considered and modelled using an architecture level simulator. This modelling is intended to analyse the thermal effects of 3D memory, its reliability and lifetime of the chip, with greater accuracy.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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