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arXiv 1104.5692cond-mat.mtrl-scicond-mat.dis-nn
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机械剪切变形诱导非晶硅晶化

Crystallization of amorphous silicon induced by mechanical shear deformations

Ali Kerrache, Normand Mousseau, Laurent J. Lewis

摘要:

利用经典的分子动力学(MD)模拟和经验的环境相关原子间势(EDIP)[Phys.Rev.B56,8542(1997)],研究了非晶硅(a-Si),特别是晶化对外部机械剪切变形的响应。与以前的结果一致,我们发现,在低剪切速度和低温下,剪切变形增加无序和缺陷密度。然而,在高温下,变形被发现诱导结晶,表现出与剪切速率和温度相关的动态转变。剪切变形下的a-Si的性质和系统结晶的程度进行了分析的剪切和非剪切材料之间的势能差(PED),以及缺陷的分数和具有结晶环境的颗粒的数量。

英文摘要:

We have investigated the response of amorphous silicon (a-Si), in particular crystallization, to external mechanical shear deformations using classical molecular dynamics (MD) simulations and the empirical Environment Dependent Inter-atomic Potential (EDIP) [Phys. Rev. B 56, 8542 (1997)]. In agreement with previous results we find that, at low shear velocity and low temperature, shear deformations increase disorder and defect density. At high temperatures, however, the deformations are found to induce crystallization, demonstrating a dynamical transition associated with both shear rate and temperature. The properties of a-Si under shear deformations and the extent at which the system crystallizes are analyzed in terms of the potential energy difference (PED) between the sheared and non-sheared material, as well as the fraction of defects and the number of particles that possess a crystalline environment.

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