指数带边已经在各种材料中观察到，包括晶体和非晶体。在本文中，我们推断这些尾巴在非晶和有缺陷的晶体硅的结构起源的直接计算与电流{ \it ab initio}方法。我们发现，指数尾出现在放松模型的金刚石与适当的点缺陷。在非晶硅（a-Si）中，我们发现网络中存在短键和长键的结构丝，并且在两个带尾的极端边缘附近的尾态也是连续的，在结构丝上有许多局域化。我们连接的存在下，这两个灯丝系统的缺陷和/或拓扑紊乱的存在下，结构松弛。
英文摘要：
Exponential band edges have been observed in a variety of materials, both crystalline and amorphous. In this paper, we infer the structural origins of these tails in amorphous and defective crystalline Si by direct calculation with current {\it ab initio} methods. We find that exponential tails appear in relaxed models of diamond with suitable point defects. In amorphous silicon (a-Si), we find that structural filaments of short bonds and long bonds exist in the network, and that the tail states near the extreme edges of both band tails are are also filamentary, with much localization on the structural filaments. We connect the existence of both filament systems to structural relaxation in the presence of defects and or topological disorder.
College of Physics, Chengdu University of Technology（成都理工大学物理学院）；Physical and Theoretical Chemistry Laboratory, Department of Chemistry, University of Oxford（牛津大学化学系物理与理论化学实验室）；Laboratoire Charles Coulomb (L2C), University of Montpellier and CNRS（蒙彼利埃大学与法国国家科学研究中心夏尔·库隆实验室）
Nexus-CAT: A Computational Framework to Define Long-Range Structural Descriptors in Glassy Materials from Percolation Theory
Laboratoire Charles Coulomb, CNRS - University of Montpellier（夏尔·库隆实验室，法国国家科学研究中心-蒙彼利埃大学）；Departamento de Física, Universidad Simón Bolívar（西蒙玻利瓦尔大学物理系）
