B. L. Oksengendler, N. N. Turaeva, S. S. Rashidova
The statistical theory of multiple exciton generation in quantum dots which is based on the Fermi approach to the problem of multiple particle in nucleon-nucleon collisions is presented. Our estimates of the multiple exciton generation efficiency in different quantum dots, induced by absorption of a single photon, are in a good agreement with the experimental data.
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An intense laser pulse propagating in a medium of inhomogeneously broadened quantum dots massively creates entangled exciton states. After passage of the pulse all single-exciton states remain unpopulated (self-induced transparency) whereas biexciton coherence (exciton entanglement) is generated through two-photon transitions. We propose several experimental techniques for the observation of such unexpected behavior.
Dielectric screening is greatly important to an accurate calculation of the exciton binding energies in two-dimensional materials. In this work, we calculate the dielectric function and 2D polarizability of multilayer (up to three) phosphorene sheets using Density Functional Theory. The 2D polarizabilities are then used in the dielectric screening of the excitonic interaction in multilayer phosphorene quantum dots. In the limit of large quantum dots, excitonic gaps are shown to exhibit very good agreement with state-of-the-art measurements of the optical gaps of multilayer phosphorene sheets d…
Formation of excitonic states in quantum dots of nitride based III-V semiconductors GaN and AlN including coulomb and exchange interactions are investigated. Dark exciton formation is found to occur for both GaN quantum dots(QDs) with wurtzite structure having positive crystal field splitting and GaN and AlN QDs with zero crystal field splitting with a transition from dark to bright exciton at about 40Å. In wurtzite AlN QDs with negative crystal field splitting the splitting between the dark and bright excitonic states is very small and vanishes at about 15Å.
The full time-dependent four-wave mixing polarization in quantum dots is microscopically calculated, taking into account acoustic phonon-assisted transitions between different exciton states of the dot. It is shown that quite different dephasing times of higher exciton states in pancake anisotropic InGaAs quantum dots are responsible for the experimentally observed [1] double-exponential decay in the photon echo signal.
We study an impact of the fine structure of the heavy--hole ground state exciton confined in semiconductor quantum dots on the photoluminescence polarization dynamics solving the relevant system of the rate equations. The presence of the dark excitons is usually ignored and the polarization decay is assumed to be caused by direct transitions within the radiative doublet. We demonstrate that in strongly confined quantum dots the dark excitons, which are energetically well below the bright excitons, have actually a decisive effect on the polarization dynamics due to their persistent nature. The …
We present a theory of excitonic processes in gate controlled graphene quantum dots. The dependence of the energy gap on shape, size and edge for graphene quantum dots with up to a million atoms is predicted. Using a combination of tight-binding, Hartree-Fock and configuration interaction methods, we show that triangular graphene quantum dots with zigzag edges exhibit optical transitions simultaneously in the THz, visible and UV spectral ranges, determined by strong electron-electron and excitonic interactions. The relationship between optical properties and finite magnetic moment and charge d…
We study the relaxation of the exciton spin (longitudinal relaxation time $T_{1}$) in single asymmetrical quantum dots due to an interplay of the short--range exchange interaction and acoustic phonon deformation. The calculated relaxation rates are found to depend strongly on the dot size, magnetic field and temperature. For typical quantum dots and temperatures below 100 K, the zero--magnetic field relaxation times are long compared to the exciton lifetime, yet they are strongly reduced in high magnetic fields. We discuss explicitly quantum dots based on (In,Ga)As and (Cd,Zn)Se semiconductor …
We demonstrate evidence for a radiative recombination channel of dark excitons in self-assembled quantum dots. This channel is due to a light hole admixture in the excitonic ground state. Its presence was experimentally confirmed by a direct observation of the dark exciton photoluminescence from a cleaved edge of the sample. The polarization resolved measurements revealed that a photon created from the dark exciton recombination is emitted only in the direction perpendicular to the growth axis. Strong correlation between the dark exciton lifetime and the in-plane hole g-factor enabled us to sh…
We calculate the near-field optical spectra of excitons and biexcitons in semiconductor quantum dots naturally occurring at interface fluctuations in GaAs-based quantum wells, using a non-local description of the response function to a spatially modulated electro-magnetic field. The relative intensity of the lowest, far-field forbidden excitonic states is predicted; the spatial extension of the ground biexciton state is found in agreement with recently published experiments.
The emission spectrum of exciton complexes formed in individual self-assembled quantum dots (QDs) embedded into a p-n junction is theoretically studied using an effective mass model. We calculate the particle Coulomb interactions, eletron-hole overlaps and transition energies of exciton complexes for the different strength and direction of electric field. Both redshifts and blueshifts are observed in exciton, trions and biexciton. The Stark effect may be applied to manipulate the spontaneous emission rate of individual QDs embedded in microcavities.
With the ever-growing interest in quantum computing, understanding the behaviour of excitons in monolayer quantum dots has become a topic of great relevance. In this paper, we consider a Wannier exciton confined in a triangular quantum dot of hexagonal Boron Nitride. We begin by outlining the adequate basis functions to describe a particle in a triangular enclosure, analyzing their degeneracy and symmetries. Afterwards, we discuss the excitonic hamiltonian inside the quantum dot and study the influence of the quantum dot dimensions on the excitonic states.
We have studied the size dependence of the exciton g-factor in self-assembled InAs/InP quantum dots. Photoluminescence measurements on a large ensemble of these dots indicate a multimodal height distribution. Cross-sectional Scanning Tunneling Microscopy measurements have been performed and support the interpretation of the macro photoluminescence spectra. More than 160 individual quantum dots have systematically been investigated by analyzing single dot magneto-luminescence between 1200nm and 1600 nm. We demonstrate a strong dependence of the exciton g-factor on the height and diameter of the…
Excitons in alloyed nanowire quantum dots have unique spectra as shown here using atomistic calculations. The bright exciton splitting is triggered solely by alloying and despite cylindrical quantum dot shape reaches over $15~μ$eV, contrary to previous theoretical predictions, however, in line with experimental data. This splitting can however be tuned by electric field to go below $1$~$μ$eV threshold. The dark exciton optical activity is also strongly affected by alloying reaching notable $1/3500$ fraction of the bright exciton and having large out-of-plane polarized component.
We study the effect of Coulomb correlation on the emission properties of the ground state exciton in zincblende CdSe/ZnS core-shell and in wurtzite ZnO quantum dots. We validate our theory model by comparing results of computed exciton energies of CdSe/ZnS quantum dots to photoluminescence and scanning near-field optical microscopy measurements. We use that to estimate the diameter of the quantum dots using a simple model based on infinitely deep quantum well and compare the results with the statistics of the atomic force microscopy scans of CdSe/ZnS dots, obtaining excellent agreement. Therea…
We here propose a mechanism to teleport electrons between quantum dots through the transformation of a virtual bright exciton into a dark exciton. This mechanism relies on the interactions of two composite bosons: a pair of electrons with opposite spins, trapped in two dots and an electron-hole pair in a free exciton coupled to an unabsorbed pump pulse, which makes it ``bright'' but virtual. This bright exciton first turns ``dark'' by dropping its electron and stealing the trapped electron with opposite spin through an exchange Coulomb process with the trapped pair. In a second step, the dark …
We use an atomistic model to consider the effect of shape symmetry breaking on the optical properties of self-assembled InAs/GaAs quantum dots. In particular, we investigate the energy level structure and optical activity of the lowest energy excitons in these nanostructures. We compare between quantum dots with two-fold rotational and two reflections (C2v) symmetry and quantum dots in which this symmetry was reduced to one reflection only (Cs) by introducing a facet between the quantum dots and the host material. We show that the symmetry reduction mostly affects the optical activity of the d…
We present numerical investigations based on the Luttinger-Kohn four-band $k \cdot p$ theory and, accordingly, establish a quantitatively valid model of the excitonic fine structures of droplet epitaxial GaAs/AlGaAs quantum dots under uni-axial stress control. In the formalisms, stressing a photo-excited quantum dot is equivalent creating a pseudo-magnetic field that is directly coupled to the pseudo-spin of the exciton doublet and tunable to tailor the polarized fine structure of exciton. The latter feature is associated with the valence-band-mixing of exciton that is especially sensitive to …
We have found a novel mechanism of spectral broadening and dephasing in quantum dots (QDs) due to the coupling to longitudinal-optical (LO) phonons. In theory, this mechanism comes into play only if the complete manifold of exciton levels (including those in the wetting-layer continuum) is taken into account. We demonstrate this nontrivial dephasing in different types of QDs, using the exactly solvable quadratic coupling model, here generalized to an arbitrary number of excitonic states.
We report on single InGaAs quantum dots embedded in a lateral electric field device. By applying a voltage we tune the neutral exciton transition into resonance with the biexciton using the quantum confined Stark effect. The results are compared to theoretical calculations of the relative energies of exciton and biexciton. Cascaded decay from the manifold of single exciton-biexciton states has been predicted to be a new concept to generate entangled photon pairs on demand without the need to suppress the fine structures splitting of the neutral exciton.
Theory of exciton fine structure in semiconductor quantum dots and its dependence on quantum dot anisotropy and external lateral electric field is presented. The effective exciton Hamiltonian including long range electron-hole exchange interaction is derived within the k*p effective mass approximation (EMA). The exchange matrix elements of the Hamiltonian are expressed explicitly in terms of electron and hole envelope functions. The matrix element responsible for the "bright" exciton splitting is identified and analyzed. An excitonic fine structure for a model quantum dot with quasi- two-dimen…
We study the effect of an electric-field on an electron-hole pair in an asymmetric system of vertically coupled self-assembled quantum dots taking into account their non-perfect alignment. We show that the non-perfect alignment does not qualitatively influence the exciton Stark effect for the electric field applied in the growth direction, but can be detected by application of a perpendicular electric field. We demonstrate that the direction of the shift between the axes of non-aligned dots can be detected by rotation of a weak electric field within the plane of confinement. Already for a near…
So far in the literature the terms "charged exciton" and "trion" are often confused with each other and mostly considered as the same. In this work we show this is not the case in 2D quantum dots with a parabolic confinement. By using the unrestricted Hartree-Fock method the energy and binding energy of both charged excitons and trions in 2D parabolic quantum dots are calculated in dependence on the confinements of charge carriers in quantum dot. It is shown that the binding energies of the charged exciton and the trion behave differently in regard to the ratios of the confinements between the…
Majorana excitons in a Kitaev chain of semiconductor quantum dots in a nanowire
本文提出Majorana激子理论，研究光激发电子-空穴对与纳米线量子点Kitaev链中Majorana费米子的相互作用，并通过解析与精确对角化方法在吸收光谱中证实Majorana零模的存在。
Within the Floquet theory of periodically driven quantum systems, we demonstrate that a high-frequency electromagnetic field can be used as an effective tool to control excitonic properties of semiconductor quantum dots (QDs). It is shown, particularly, that the field both decreases the exciton binding energy and dynamically stabilizes the exciton, increasing its radiative lifetime. The developed theory can serve as a basis for the ultrafast method to tune spectral characteristics of the QD-based photon emitters by a high-frequency field.
We propose the concept of valley coherence and superradiance in the reciprocal space and show that it leads to an $N$-fold decrease of the bright exciton radiative lifetime in quantum dots (QDs) of an $N$-valley semiconductor. Next we explain why, despite this, the exciton radiative lifetimes in PbX (X = S, Se, Te) QDs, measured from the photoluminescence decay, are in the microsecond range. We also address peculiarities of the light-matter interaction in nanostructures made of narrow-gap materials with strong inter-band coupling.
Quantum dots are arguably one of the best platforms for optically accessible spin based qubits. The paramount demand of extended qubit storage time can be met by using quantum-dot-confined dark exciton: a longlived electron-hole pair with parallel spins. Despite its name the dark exciton reveals weak luminescence that can be directly measured. The origins of this optical activity remain largely unexplored. In this work, using the atomistic tight-binding method combined with configuration-interaction approach, we demonstrate that atomic-scale randomness strongly affects oscillator strength of d…
Resonant transfer of energy between excited states in a system of two semiconductor quantum dots is studied theoretically. The model Hamiltonian has been formulated, which allowed describe the impact on the dynamics of the resonant laser pulse, the Coulomb interaction, the static Stark effect, and the relaxation of the exciton states. Examples of calculations for efficiency of the energy transfer under different excitation conditions are presented. The control of the process by the level shift in a constant electric field is demonstrated.
Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb capping layer. We show that very small values of the fine structure splitting comparable with the natural linewidth of the excitonic transitions are achievable for realistic quantum dot morphologies despite the structural elongation and the piezoelectric field. For example, varying the capping layer thickness allows for a fine tuning of the splitting energy…
We theoretically model the electronic dynamics of a coupled quantum dot pair in a static electric field. We then investigate the possibility of polarization-entangled photon emission from the radiative cascade of the molecular biexciton state. Through numerical simulations, we analyze the dependence of entanglement fidelity on temperature and electric field, as well as tunnel coupling. We establish a regime of direct-indirect exciton detunings for which coupled quantum dots are superior to single dots for entangled photon generation, yielding near-unit fidelity over a larger range of exchange …
We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs around 1300 nm; we clearly observe the formation of neutral and charged exciton and biexciton states, and we obtain a biexciton binding energy of 3.1 meV. The dots exhibit an s-p shell splitting of approximately 100 meV, indicating strong confinement.
We present a theoretical investigation of the optical properties of polaronic excitons in stacked self-assembled quantum dots, which is based on the non-adiabatic approach. A parallelepiped-shaped quantum dot is considered as a model for a self-assembled quantum dot in a stack. The exciton-phonon interaction is taken into account for all phonon modes specific for these quantum dots (bulk-like, half-space and interface phonons). We show that the coupling between stacked quantum dots can lead to a strong enhancement of the optical absorption in the spectral ranges characteristic for phonon satel…
A photo-excited II-VI semiconductor nanocrystal doped with a few Mn spins is considered. The effects of spin-exciton interactions and the resulting multi-spin correlations on the photoluminescence are calculated by numerical diagonalization of the Hamiltonian, including exchange interaction between electrons, holes and Mn spins, as well as spin-orbit interaction. The results provide a unified description of recent experiments of photoluminesnce of dots with one and many Mn atoms as well as optically induced ferromagnetism in semimagnetic nanocrystals.
The effects resulting due to dressing of an exciton with phonons are analysed as the source of unavoidable decoherence of orbital degrees of freedom in quantum dots. The dressing with longitudinal optical phonons results in energetic shift of order of a few meV even of the ground state of exciton in a state-of-the-art InAs/GaAs dot and the mediating role of longitudinal acoustical phonons is essential in this process. The characteristic time needed for dressing of the exciton with optical phonons is of a picosecond order. That time can be regarded as the lowest limit for decoherence for optica…
As an alternative to commonly used electrical methods, we have investigated the optical pumping of charged exciton complexes addressing impurity related transitions with photons of the appropriate energy. Under these conditions, we demonstrate that the pumping fidelity can be very high while still maintaining a switching behavior between the different excitonic species. This mechanism has been investigated for single quantum dots of different size present in the same sample and compared with the direct injection of spectator electrons from nearby donors.
We study the dynamics of excitons in GaAs/(Al,Ga)As core-shell nanowires by continuous-wave and time-resolved photoluminescence and photoluminescence excitation spectroscopy. Strong Al segregation in the shell of the nanowires leads to the formation of Ga-rich inclusions acting as quantum dots. At 10 K, intense light emission associated with these shell quantum dots is observed. The average radiative lifetime of excitons confined in the shell quantum dots is 1.7 ns. We show that excitons may tunnel toward adjacent shell quantum dots and nonradiative point defects. We investigate the changes in…
Single and multi-band (Burt-Foreman) k.p Hamiltonians for GaAs crystal phase quantum dots are developed and used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence band mixing and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorious Nano Lett. 15, 2652 (2015)] it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al. Adv. Mater. 27, 2195 (2015)], includin…
A theoretical investigation is presented of the statistics of excitons in quantum dots (QDs) of different sizes. A formalism is developed to build the exciton creation operator in a dot from the single exciton wavefunction and it is shown how this operator evolves from purely fermionic, in case of a small QD, to purely bosonic, in case of large QDs. Nonlinear optical emission spectra of semiconductor microcavities containing single QDs are found to exhibit a peculiar multiplet structure which reduces to Mollow triplet and Rabi doublet in fermionic and bosonic limits, respectively.
The polarization splitting of the exciton ground state in two laterally coupled quantum dots under an in-plane electric field is investigated and its effective tuning is designed. It is found that there are significant Stark effect and anticrossing in energy levels. Due to coupling between inter- and intra-dot states, the absolute value of polarization splitting is significantly reduced, and it could be tuned to zero by the electric field for proper inter-dot separations. Our scheme is interesting for the research on the quantum dots-based entangled-photon source.
We study theoretically the radiative recombination of excitons in double quantum dots in the presence of carrier-phonon coupling. We show that the phonon-induced pure dephasing effects and transitions between the exciton states strongly modify the spontaneous emission process and make it sensitive to temperature, which may lead to non-monotonic temperature dependence of the time-resolved luminescence. We show also that under specific resonance conditions the biexcitonic interband polarization can be coherently transferred to the excitonic one, leading to an extended life time of the total cohe…
We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite (WZ) and zinc-blende (ZB) crystal structures, as well as strained WZ GaN/AlGaN quantum dots. We show that the strain field significantly modifies the conduction and valence band edges of GaN quantum dots. The piezoelectric field is found to govern excitonic properties of WZ GaN/AlN quantum dots, while it has a smaller effect on WZ GaN/AlGaN, and very little effect on ZB GaN/AlN quantum dots. As a result, the exciton ground state energy in WZ GaN/AlN quantum dots, with heights larger than 3 nm, exhibits a…
We study the Stark effect for an exciton confined in a pair of vertically coupled quantum dots. A single-band approximation for the hole and a parabolic lateral confinement potential are adopted which allows for the separation of the lateral center-of-mass motion and consequently for an exact numerical solution of the Schrödinger equation. We show that for intermediate tunnel coupling the external electric field leads to the dissociation of the exciton via an avoided crossing of bright and dark exciton energy levels which results in an atypical form of the Stark shift. The electric-field-induc…
We propose correlated yet extremely simple single-parameter-dependent wave-functions with a Slater-type correlation factor, to describe excitons in 0D, quasi-1D and quasi-2D semiconductor quantum dots. We provide closed-form formulas for the wave-function normalization factor, electron/hole single-particle density and the expectation value of the kinetic energy. We additionally supply fast integration procedures for the Coulomb interaction in the presence of dielectric mismatch with the surrounding medium for nanoplatelets (quasi-2D systems), and for the bare-Coulomb integral in long nanorods …
The dynamics of an exciton-LO-phonon system after an ultrafast optical excitation in an InAs/GaAs quantum dot is studied theoretically. Influence of anharmonic phonon damping and its interplay with the phonon dispersion is analyzed. The signatures of the zone-edge decay process in the absorption spectrum and time evolution are highlighted, providing a possible way of experimental investigation on phonon anharmonicity effects.
With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition from multi excitons down to a single indirect exciton. In the few exciton regime, we observe discrete emission lines reflecting the interplay of dipolar interexcitonic repulsion and spatial quantization. The quantum dot states are tunable by gate voltage and employing a magnetic field results in a diamagnetic shift. The scheme introduces a new gate-defined plat…
Spin relaxation in undoped quasi-spherical CdS quantum dots at zero magnetic fields is investigated using time- and polarization-resolved transient absorption measurements. Unlike in previous studies of these systems, the measured signals were corrected for spin-insensitive contributions to the exciton bleaching dynamics, {allowing us to determine} the pure spin-related exciton dynamics. To explain the observed room-temperature spin-relaxation time of several nanoseconds, we propose a novel mechanism based on intralevel exciton transitions with the emission of one LO phonon, the absorption of …
We report on a magneto-photoluminescence study of isotopically pure 70Ge/Si self-assembled type-II quantum dots. Oscillatory behaviors attributed to the Aharonov-Bohm effect are simultaneously observed for the emission energy and intensity of excitons subject to an increasing magnetic field. When the magnetic flux penetrates through the ring-like trajectory of an electron moving around each quantum dot, the ground state of an exciton experiences a change in its angular momentum. Our results provide the experimental evidence for the phase coherence of a localized electron wave function in group…
It is demonstrated how the exciton and the biexciton state of a quantum dot can be prepared with high fidelity on a picosecond time-scale by driving the dot with a strong laser pulse that is tuned above the exciton resonance for exciton preparation and in resonance with the exciton transition for biexciton preparation. The proposed schemes make use of the phonon-induced relaxation towards photon dressed states in optically driven quantum dots and combine the simplicity of Rabi flopping with the robustness of adiabatic rapid passage schemes. Our protocols allow for an on-demand, fast and almost…
The dynamics of exciton recombination in an ensemble of indirect band-gap (In,Al)As/AlAs quantum dots with type-I band alignment is studied. The lifetime of confined excitons which are indirect in momentum-space is mainly influenced by the sharpness of the heterointerface between the (In,Al)As quantum dot and the AlAs barrier matrix. Time-resolved photoluminescence experiments and theoretical model calculations reveal a strong dependence of the exciton lifetime on the thickness of the interface diffusion layer. The lifetime of excitons with a particular optical transition energy varies because…
Multiple exciton generation is a process in which more than one electron hole pair is generated per absorbed photon. It allows us to increase the efficiency of solar energy harvesting. Experimental studies have shown the multiple exciton generation yield of 1.2 in isolated colloidal quantum dots. However real photoelectric devices require the extraction of electron hole pairs to electric contacts. We provide a systematic study of the corresponding quantum coherent processes including extraction and injection and show that a proper design of extraction and injection rates enhances the yield sig…
Strong electrically tunable exciton g-factors are observed in individual (Ga)InAs self-assembled quantum dots and the microscopic origin of the effect is explained. Realistic eight band k.p simulations quantitatively account for our observations, simultaneously reproducing the exciton transition energy, DC Stark shift, diamagnetic shift and g-factor tunability for model dots with the measured size and a comparatively low In-composition of x(In)~35% near the dot apex. We show that the observed g-factor tunability is dominated by the hole, the electron contributing only weakly. The electric fiel…
The structure of the ground state exciton of Cd(Se,Te) quantum dots embedded in ZnTe matrix is studied experimentally using photoluminescence spectroscopy and theoretically using ${\bf k}\cdot{\bf p}$ and configuration interaction methods. The experiments reveal a considerable reduction of fine-structure splitting energy of the exciton with increase of Se content in the dots. That effect is interpreted by theoretical calculations to originate due to the transition from spatially direct (type-I) to indirect (type-II) transition between electrons and holes in the dot induced by increase of Se. T…
We have used magneto-photoluminescence measurements to establish that InP/GaAs quantum dots have a type-II (staggered) band alignment. The average excitonic Bohr radius and the binding energy are estimated to be 15nm and 1.5 meV respectively. When compared to bulk InP, the excitonic binding is weaker due to the repulsive (type-II) potential at the hetero-interface. The measurements are extended to over almost six orders of magnitude of laser excitation powers and to magnetic fields of up to 50 tesla. It is shown that the excitation power can be used to tune the average hole occupancy of the qu…
Interplay between hyperfine and anisotropic exchange interactions in exciton luminescence of quantum dots
该研究理论分析量子点中激子发光，探讨超精细与各向异性交换相互作用，计算偏振度对磁场依赖，揭示特殊机制下的光学取向。
We study the exciton dynamics in an optically excited nanocrystal quantum dot. Multiple exciton formation is more efficient in nanocrystal quantum dots compared to bulk semiconductors due to enhanced Coulomb interactions and the absence of conservation of momentum. The formation of multiple excitons is dependent on different excitation parameters and the dissipation. We study this process within a Lindblad quantum rate equation using the full many-particle states. We optically excite the system by creating a single high energy exciton $E_{SX}$ in resonance to a double exciton $E_{DX}$. With Co…
The exciton recombination and spin dynamics in (In,Al)As/AlAs quantum dots (QDs) with indirect band gap and type-I band alignment are studied. The negligible (less than $0.2~μ$eV) value of the anisotropic exchange interaction in these QDs prevents a mixing of the excitonic basis states with pure spin and allows for the formation of spin polarized bright excitons for quasi-resonant circularly polarized excitation. In a longitudinal magnetic field, the recombination and spin dynamics of the excitons are controlled by the hyperfine interaction between the electron and nuclear spins. A QD blockade…
We investigate experimentally and theoretically few-particle effects in the optical spectra of single quantum dots (QDs). Photo-depletion of the QD together with the slow hopping transport of impurity-bound electrons back to the QD are employed to efficiently control the number of electrons present in the QD. By investigating structurally identical QDs, we show that the spectral evolutions observed can be attributed to intrinsic, multi-particle-related effects, as opposed to extrinsic QD-impurity environment-related interactions. From our theoretical calculations we identify the distinct trans…
Interlayer excitons in double-layer transition metal dichalcogenides quantum dots
本研究利用含库仑相互作用的低能有效哈密顿量与精确对角化等方法，分析双层过渡金属二硫化物量子点的层间激子特性，揭示磁场、层间距、材料等的影响及双激子作用规律，为激子调控和光学器件应用提供依据。
In this work we study theoretically and experimentally the multi-particle structure of the so-called type-II quantum dots with spatially separated electrons and holes. Our calculations based on customarily developed full configuration interaction approach reveal that exciton complexes containing holes interacting with two or more electrons exhibit fairly large antibinding energies. This effect is found to be the hallmark of the type-II confinement. In addition, an approximate self-consistent solution of the multi-exciton problem allows us to explain two pronounced phenomena: the blue-shift of …
Optical emission from type-II ZnTe/ZnSe quantum dots demonstrates large and persistent oscillations in both the peak energy and intensity indicating the formation of coherently rotating states. Furthermore, the Aharanov-Bohm (AB) effect is shown to be remarkably robust and persists until 180K. This is at least one order of magnitude greater than the typical temperatures in lithographically defined rings. To our knowledge this is the highest temperature at which the AB effect has been observed in semiconductor structures.
Theory of polarized photoluminescence of indirect band gap excitons in type-I quantum dots
该研究针对弱交换作用、长寿命的间接激子量子点，理论分析超精细作用、奥弗豪泽场涨落等对激子精细结构的影响，发现其共振光致发光偏振随外磁场的变化规律异于传统量子点。
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