异质界面尖锐度对间接带隙（In，Al）As/AlAs量子点系综中激子复合动力学的影响
Influence of the heterointerface sharpness on exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap
摘要：
研究了间接带隙（In，Al）As/AlAs量子点系综中激子复合的动力学行为。受限制激子的寿命主要受（In，Al）As量子点与AlAs势垒基体之间异质界面的尖锐度的影响。时间分辨光致发光实验和理论模型计算揭示了激子寿命对界面扩散层厚度的强烈依赖性。具有特定光学跃迁能量的激子的寿命变化，因为该能量是针对尺寸、形状和组成不同的量子点获得的。不同的激子寿命，这导致在光致发光与非指数衰减服从幂律函数，可以描述的现象学分布函数，它允许一个解释的光致发光衰减与一个拟合参数。
英文摘要：
The dynamics of exciton recombination in an ensemble of indirect band-gap (In,Al)As/AlAs quantum dots with type-I band alignment is studied. The lifetime of confined excitons which are indirect in momentum-space is mainly influenced by the sharpness of the heterointerface between the (In,Al)As quantum dot and the AlAs barrier matrix. Time-resolved photoluminescence experiments and theoretical model calculations reveal a strong dependence of the exciton lifetime on the thickness of the interface diffusion layer. The lifetime of excitons with a particular optical transition energy varies because this energy is obtained for quantum dots differing in size, shape and composition. The different exciton lifetimes, which result in photoluminescence with non-exponential decay obeying a power-law function, can be described by a phenomenological distribution function, which allows one to explain the photoluminescence decay with one fitting parameter only.
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