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arXiv 1102.0400cond-mat.mtrl-sci
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Microscopic Origins of Electron and Hole Stability in ZnO

C. Richard A. Catlow, Alexey A. Sokol, Aron Walsh

英文摘要:

A novel and direct method is proposed to assess the doping limits of semiconducting materials. Applied to the case of ZnO, our first-principles calculations demonstrate that p-type ZnO is thermodynamically unstable.

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