In this paper, we calculated the dielectric function, the loss function, the magnetoplasmon dispersion relation and the temperature-induced transitions for graphene in a uniform perpendicular magnetic field B. The calculations were performed using the Peierls tight-binding model to obtain the energy band structure and the random-phase approximation to determine the collective plasma excitation spectrum. The single-particle and collective excitations have been precisely identified based on the resonant peaks in the loss function. The critical wave vector at which plasmon damping takes place is clearly established. This critical wave vector depends on the magnetic field strength as well as the levels between which the transition takes place. The temperature effects were also investigated. At finite temperature, there are plasma resonances induced by the Fermi distribution function. Whether such plasmons exist is mainly determined by the field strength, temperature, and momentum. The inelastic light scattering spectroscopies could be used to verify the magnetic field and temperature induced plasmons.
Here we use pristine graphene samples in order to analyze how the Raman peaks intensity, measured at 2.4 eV and 1.96 eV excitation energy, changes with the amount of doping. The use of pristine graphene allows investigating the intensity dependence close to the Dirac point. We show that the G peak intensity is independent on the doping, while the 2D peak intensity strongly decreases for increasing doping. Analyzing this dependence in the framework of a fully resonant process, we found that the total electron-phonon scattering rate is ~40 meV at 2.4 eV.
Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 140 MHz) plasma processes are compared. Both methods provide conformal coating of graphene with Si layers as thin as 20 nm without any additional seed layer. The RF plasma process results in amorphization of the graphene layer. In contrast, the VHF process keeps the high crystalline quality of the graphene layer almost intact. Correlation analysis of Raman 2D and G band positions indicates that Si deposition induces re…
We report a study of graphene and graphene field effect devices after exposure to a series of short pulses of oxygen plasma. We present data from Raman spectroscopy, back-gated field-effect and magneto-transport measurements. The intensity ratio between Raman "D" and "G" peaks, I(D)/I(G) (commonly used to characterize disorder in graphene) is observed to increase approximately linearly with the number (N(e)) of plasma etching pulses initially, but then decreases at higher Ne. We also discuss implications of our data for extracting graphene crystalline domain sizes from I(D)/I(G). At the highes…
We study strong coupling between plasmons in monolayer charge-doped graphene and excitons in a narrow gap semiconductor quantum well separated from graphene by a potential barrier. We show that the Coulomb interaction between excitons and plasmons result in mixed states described by a Hamiltonian similar to that for exciton-polaritons and derive the exciton-plasmon coupling constant that depends on system parameters. We calculate numerically the Rabi splitting of exciton- plasmariton dispersion branches for several semiconductor materials and find that it can reach values of up to 50 - 100 meV…
We analyze the statistical characteristics of the quasi-nonequilibrium two-dimensional electron-hole plasma in graphene layers (GLs) and graphene bilayers (GBLs) and evaluate their heat capacity.The GL heat capacity of the weakly pumped intrinsic or weakly doped GLs normalized by the Boltzmann constant is equal to $c_{GL} \simeq 6.58$. With varying carrier temperature the intrinsic GBL carrier heat capacity $c_{GBL}$ changes from $c_{GBL} \simeq 2.37$ at $T \lesssim 300$~K to $c_{GBL} \simeq 6.58$ at elevated temperatures. These values are markedly differentfrom the heat capacity of classical …
We report semiconducting behavior of monolayer graphene enabled through plasma activation of substrate surfaces. The graphene devices are fabricated by mechanical exfoliation onto pre-processed SiO2/Si substrates. Contrary to pristine graphene, these graphene samples exhibit a transport gap as well as nonlinear transfer characteristics, a large on/off ratio of 600 at cryogenic temperatures, and an insulating-like temperature dependence. Raman spectroscopic characterization shows evidence of sp3 hybridization of C atoms in the samples of graphene on activated SiO2/Si substrates. We analyze the …
A theory of the nonlinear plasma waves in graphene is developed in the nonperturbative regime. The influence of strong electric fields on the position and linewidth of plasma resonances in the far-infrared transmission experiments, as well as on the wavelength and the propagation length in the scanning near-field optical microscopy experiments is studied. The theory shows that the fields of order of a few to a few tens of kV/cm should lead to a red shift and broadening of plasma resonances in the first type and to a reduction of the wavelength and the propagation length in the second type of e…
A single-layer graphene is synthesized on Cu foil in the absence of H2 flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H2 flow, hydrogen species are produced during methane decomposition process into their active species (CHx<4), assisted by the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size (the nucleation density) has a maximum (minimum) at 50 W and saturates when the plasma power is higher than 120 W because hydrogen partial pressures are effectively tuned by a simple control of the plasma power. Ra…
The weak spin-orbit interaction in graphene was predicted to be increased, e.g., by hydrogenation. This should result in a sizable spin Hall effect (SHE). We employ two different methods to examine the spin Hall effect in weakly hydrogenated graphene. For hydrogenation we expose graphene to a hydrogen plasma and use Raman spectroscopy to characterize this method. We then investigate the SHE of hydrogenated graphene in the H-bar method and by direct measurements of the inverse SHE. Although a large nonlocal resistance can be observed in the H-bar structure, comparison with the results of the ot…
The relation between the energy and momentum of plasmarons in bilayer graphene is investigated within the Overhauser approach, where the electron-plasmon interaction is described as a field theoretical problem. We find that the Dirac-like spectrum is shifted by $ΔE(\mathbf{k})\sim 100\div150\,{\rm meV}$ depending on the electron concentration $n_{e}$ and electron momentum. The shift increases with electron concentration as the energy of plasmons becomes larger. The dispersion of plasmarons is more pronounced than in the case of single layer graphene, which is explained by the fact that the ene…
Monolayer graphene epitaxially grown on SiC(0001) was etched by H-plasma and studied by scanning tunneling microscopy and spectroscopy. The etching created partly hexagonal nanopits of monatomic depth as well as elevated regions with a height of about 0.12 nm which are stable at $T$ = 78 K. The symmetric tunnel spectrum about the Femi energy and the absence of a $6\times6$ corrugation on the elevated regions suggest that in these regions the carbon buffer layer is decoupled from the SiC substrate and quasi-free-standing bilayer graphene appears at originally monolayer graphene on the buffer la…
We investigate the etching of a pure hydrogen plasma on graphite samples and graphene flakes on SiO$_2$ and hexagonal Boron-Nitride (hBN) substrates. The pressure and distance dependence of the graphite exposure experiments reveals the existence of two distinct plasma regimes: the direct and the remote plasma regime. Graphite surfaces exposed directly to the hydrogen plasma exhibit numerous etch pits of various size and depth, indicating continuous defect creation throughout the etching process. In contrast, anisotropic etching forming regular and symmetric hexagons starting only from preexist…
We investigate the quality of hydrogen plasma defined graphene edges by Raman spectroscopy, atomic resolution AFM and low temperature electronic transport measurements. The exposure of graphite samples to a remote hydrogen plasma leads to the formation of hexagonal shaped etch pits, reflecting the anisotropy of the etch. Atomic resolution AFM reveals that the sides of these hexagons are oriented along the zigzag direction of the graphite crystal lattice and the absence of the D-peak in the Raman spectrum indicates that the edges are high quality zigzag edges. In a second step of the experiment…
We predict the self-excitation of terahertz (THz) oscillations due to the plasma instability in the lateral n+-i-n-n+$ graphene field-effect transistors (G-FET). The instability is associated with the Coulomb drag of the quasi-equilibrium electrons in the gated channel by the injected ballistic electrons resulting in a positive feedback between the amplified dragged electrons current and the injected current. The plasma excitations arise when the drag effect is sufficiently strong. The drag efficiency and the plasma frequency are determined by the quasi-equilibrium electrons Fermi energy (i.e.…
We present the results of a diagrammatic, fully ab initio calculation of the $G$ peak intensity of graphene. The flexibility and generality of our approach enables us to go beyond the previous analytical calculations in the low-energy regime. We study the laser and Fermi energy dependence of the $G$ peak intensity and analyze the contributions from resonant and non-resonant electronic transitions. In particular, we explicitly demonstrate the importance of quantum interference and non-resonant states for the $G$ peak process. Our method of analysis and computational concept is completely genera…
We analyze the operation of the graphene n+-i-n-n+ field-effect transistors (GFETs) and lateral diodes (GLDs) with the injection of ballistic electrons into the n-region. The momentum transfer of the injected ballistic electrons could lead to an effective Coulomb drag of the quasi-equilibrium electrons in the n-region and the plasma instability in the GFETs and GLDs. The instability enables the generation of terahertz radiation. The obtained results can be used for the optimization of the structures under consideration for different devices, in particular, terahertz emitters.
We propose the concept of terahertz (THz) photomixing enabled by the interband electron transitions due to the absorption of modulated optical radiation in double-graphene layer (double-GL) structures and the resonant excitation of plasma oscillations. Using the developed double-GL photomixer (DG-PM) model, we describe its operation and calculate the device characteristics. The output power of the THz radiation exhibits sharp resonant peaks at the plasmonic resonant frequencies. The peak powers markedly exceed the output powers at relatively low frequencies. Due to relatively high quantum effi…
Graphene is considered to be a promising material for future electronics. The envisaged transistor applications often rely on precision cutting of graphene sheets with nanometer accuracy. In this letter we demonstrate graphene-based quantum dots created by using atomic force microscopy (AFM) with tip-assisted electrochemical etching. This lithography technique provides resolution of about 20 nm, which can probably be further improved by employing sharper tips and better humidity control. The behavior of our smallest dots in magnetic field has allowed us to identify the charge neutrality point …
Most graphene nanoribbons in the experimental literature are patterned using plasma etching. Various etching processes induce different types of defects and do not necessarily result in the same electronic and structural ribbon properties. This study focuses on two frequently used etching techniques, namely oxygen plasma ashing and oxygen/argon reactive ion etching (RIE). Oxygen plasma ashing represents an alternative to RIE physical etching for sensitive substrates, as it is a more gentle chemical process. We find that plasma ashing creates defective graphene in the exposed trenches, resultin…
We study two-stream instabilities in a non-equilibrium system in which a stream of electrons is injected into doped graphene. As with equivalent non-equilibrium parabolic band systems, we find that the graphene systems can support unstable charge-density waves whose amplitudes grow with time. We determine the range of wavevector $\boldsymbol{q}$ that are unstable, and their growth rates. We find no instability for waves with wavevectors parallel or perpendicular to the direction of the injected carriers. We find that, within the small wavevector approximation, the angle between $\boldsymbol{q}…
We study the interaction of graphene with ultrashort few femtosecond long optical pulse. For such a short pulse, the electron dynamics is coherent and is described within the tight-binding model of graphene. The interaction of optical pulse with graphene is determined by strong wave vector dependence of the interband dipole matrix elements, which are singular at the Dirac points of graphene. The electron dynamics in optical pulse is highly irreversible with large residual population of the conduction band. The residual conduction band population as a function of the wave vector is nonuniform w…
We report on the observation of terahertz radiation induced edge photogalvanic currents in graphene, which are nonlinear in intensity. The increase of the radiation intensities up to MW/cm$^2$ results in a complex nonlinear intensity dependence of the photocurrent. The nonlinearity is controlled by the back gate voltage, temperature and radiation frequency. A microscopic theory of the nonlinear edge photocurrent is developed. Comparison of the experimental data and theory demonstrates that the nonlinearity of the photocurrent is caused by the interplay of two mechanisms, i.e. by direct inter-b…
We evaluate the influence of the Coulomb drag of the electrons and holes in the gated n- and p-regions by the ballistic electrons and holes generated in the depleted i-region due to the interband tunneling on the current-voltage characteristics and impedance of the p+-p-i-n-n+ graphene tunneling transistor structures (GTTSs). The drag leads to a current amplification in the gated n- and p-regions and a positive feedback between the amplified dragged current and the injected tunneling current. A sufficiently strong drag can result in the negative real part of the GTTS impedance enabling the pla…
Uniaxial strain is known to modify significantly the electronic properties of graphene, a carbon single layer of atomic width. Here, we study the effect of applied strain on the composite excitations arising from the coupling of charge carriers and plasmons in graphene, i.e. the plasmarons. Specifically, we predict that the plasmaron energy dispersion, which has been recently observed experimentally in unstrained graphene, is shifted and broadened by applied uniaxial strain. Thus, strain constitutes an additional parameter which may be useful to tune graphene properties in plasmaronic devices.
We propose and analyze the detector of modulated terahertz (THz) radiation based on the graphene field-effect transistor with mechanically floating gate made of graphene as well. The THz component of incoming radiation induces resonant excitation of plasma oscillations in graphene layers (GLs). The rectified component of the ponderomotive force between GLs invokes resonant mechanical swinging of top GL, resulting in the drain current oscillations. To estimate the device responsivity, we solve the hydrodynamic equations for the electrons and holes in graphene governing the plasma-wave response,…
We derive the system of hydrodynamic equations governing the collective motion of massless fermions in graphene. The obtained equations demonstrate the lack of Galilean- and Lorentz invariance, and contain a variety of nonlinear terms due to quasi-relativistic nature of carriers. Using those equations, we show the possibility of soliton formation in electron plasma of gated graphene. The quasi-relativistic effects set an upper limit for soliton amplitude, which marks graphene out of conventional semiconductors. The lack of Galilean and Lorentz invariance of hydrodynamic equations is revealed i…
We have developed an analytical formulation to calculate the plasmon dispersion relation for a two-dimensional layer which is encapsulated within a narrow spatial gap between two bulk half-space plasmas. This is based on a solution of the inverse dielectric function integral equation within the random-phase approximation (RPA). We take into account the nonlocality of the plasmon dispersion relation for both gapped and gapless graphene as the sandwiched two-dimensional (2D) semiconductor plasma. The associated nonlocal graphene plasmon spectrum coupled to the "sandwich" system is exhibited in d…
Two-dimensional materials constitute an exciting platform for nonlinear optics with large nonlinearities that are tunable by gating. Hence, gate-tunable harmonic generation and intensity-dependent refraction have been observed in e.g. graphene and transition-metal dichalcogenides, whose electronic structures are accurately modelled by the (massive) Dirac equation. We exploit on the simplicity of this model and demonstrate here that arbitrary nonlinear response functions follow from a simple iterative approach. The power of this approach is illustrated by analytical expressions for harmonic gen…
The finite momentum optical response $σ({\boldsymbol{q}},ω)$ of graphene can be probed with the innovative technique of infrared nanoscopy where mid-infrared radiation is confined by an atomic force microscope cantilever tip. In contrast to conventional $q\sim 0$ optical absorption which primarily involves Dirac fermions with momentum near the Fermi momentum, $k\sim k_F$, for finite $q$, $σ({\boldsymbol{q}},ω)$ has the potential to provide information on many body renormalizations and collective phenomena which have been found at small $k< k_F$ near the Dirac point in electron-doped graphene. …
We calculate the double resonant (DR) Raman spectrum of graphene, and determine the lines associated to both phonon-defect processes, and two-phonons ones. Phonon and electronic dispersions reproduce calculations based on density functional theory corrected with GW. Electron-light, -phonon, and -defect scattering matrix elements and the electronic linewidth are explicitly calculated. Defect-induced processes are simulated by considering different kind of idealized defects. For an excitation energy of $ε_L=2.4$ eV, the agreement with measurements is very good and calculations reproduce: the rel…
Nonlinear intensity dependence of photogalvanics and photoconductance induced by terahertz laser radiation in twisted bilayer graphene close to magic angle
University of Regensburg（雷根斯堡大学）；ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology（巴塞罗那科学和技术研究所光子科学研究所）；National Institute for Materials Science（国立材料研究所）；Institute of High Pressure Physics, Polish Academy of Sciences（波兰科学院高压物理研究所）
Electronic screening renormalizes the linear bands of graphene and in the vicinity of the Dirac point, creates a diamond shaped structure in the quasiparticle spectral density. This is a result of electron-plasmon scattering processes which produce a finite momentum feature referred to as the `plasmaron ring'. In this work we explore the effects of uniaxial strain on these spectral features with the aim of understanding how strain modifies correlations. We derive and calculate the spectral density to the G$_0$W-RPA level which allows us to identify the dispersive behaviour of the diamond geome…
We theoretically study a doped graphene ribbon suspended over a trench and subject to an ac-electrical field polarized perpendicularly to the graphene plane. In such a system, the external ac-field is coupled to the relatively slow mechanical vibrations via plasmonic oscillations in the isolated graphene sheet. We show that the electrical field generates an effective pumping of the mechanical modes. It is demonstrated that in the case of underdamped plasma oscillation, a peculiar kind of geometrical resonance of the mechanical and plasma oscillations appear. Namely the efficiency of pumping si…
The photoresponse of graphene has recently received considerable attention. The main mechanisms yielding a finite dc response to an oscillating radiation field which have been investigated include responses of photovoltaic, photo-thermoelectric, and bolometric origin. In this Article we present a fully analytical theory of a photoresponse mechanism which is based on the excitation of plasma waves in a gated graphene sheet. By employing the theory of relativistic hydrodynamics, we demonstrate that plasma-wave photodetection is substantially influenced by the massless Dirac fermion character of …
Methylammonium lead iodide perovskite has revolutionized the field of third generation solid-state solar cells leading to simple solar cell structures1 and certified efficiencies up to 20.1%. Recently the peculiar light harvesting properties of organometal halide perovskites have been exploited in photodetectors where responsivities of ~3.5 A/W and 180 A/W have been respectively achieved for pure perovskite-based devices and hybrid nanostructures. Here, we report on the first hybrid phototransistors where the performance of a network of photoactive Methylammonium Lead Iodide nanowires (hereaft…
We propose a hydrodynamic model describing steady-state and dynamic electron and hole transport properties of graphene structures which accounts for the features of the electron and hole spectra. It is intended for electron-hole plasma in graphene characterized by high rate of intercarrier scattering compared to external scattering (on phonons and impurities), i.e., for intrinsic or optically pumped (bipolar plasma), and gated graphene (virtually monopolar plasma). We demonstrate that the effect of strong interaction of electrons and holes on their transport can be treated as a viscous frictio…
The interaction between electrons and plasmons in trilayer graphene is investigated within the Overhauser approach resulting in the 'plasmaron' quasi-particle. This interaction is cast into a field theoretical problem, nd its effect on the energy spectrum is calculated using improved Wigner-Brillouin perturbation theory. The plasmaron spectrum is shifted with respect to the bare electron spectrum by $ΔE(\mathbf{k})\sim 50\div200\,{\rm meV}$ for ABC stacked trilayer graphene and for ABA trilayer graphene by $ΔE(\mathbf{k})\sim 30\div150\,{\rm meV}$ ($ΔE(\mathbf{k})\sim 1\div5\,{\rm meV}$) for t…
We have investigated the effect of imperfect circular polarization on the angle-resolved photoemission spectroscopy signal, using graphene as a prototypical system that can be understood within tight-binding formalism. We found that perfect left- and right-circularly polarized lights give the same photoelectron intensity distribution around a constant energy contour of the graphene $π$ band. On the other hand, upon breaking the purity of the polarization, photoelectron intensity starts to show circular dichroism, which is enhanced with further increasing the imperfection. Our results predict t…
Self-consistent field theory is used to obtain the non-local plasmon dispersion relation of monolayer graphene which is Coulomb-coupled to a thick conductor. We calculate numerically the undamped plasmon excitation spectrum for arbitrary wave number. For gapped graphene, both the low-frequency (acoustic) and high frequency (surface) plasmons may lie within an undamped opening in the particle-hole region. Furthermore, we obtain plasmon excitations in a region of frequency-wave vector space which do not exist for free-standing gapped graphene.
Edge engineering is important for both fundamental research and applications as the device size decreases to nanometer scale. This is especially the case for graphene because a graphene edge shows totally different electronic properties depending on the atomic structure and the termination. It has recently been shown that an atomically precise zigzag edge can be obtained by etching graphene and graphite using hydrogen (H) plasma. However, edge termination had not been studied directly. In this study, termination of edges created by H-plasma is studied by high-resolution electron energy loss sp…
Graphene is attracting vast interest due to its superior electronic and mechanical properties. However, structure and electronic properties of its edge are often neglected, although they are important for nanoscale devices because the edge ratio becomes larger by decreasing the device size. In this study, we suggest a way to fabricate a graphene with atomically aligned zigzag edges by applying hydrogen-plasma etching (HPE) technique. By patterning a graphene prior to HPE, it is succeeded to shape a graphene in desired structure. Both atomic force microscopy and Raman spectroscopy confirm that …
We report a theoretical study of the many-body effects of electron-electron interaction on the ground-state and spectral properties of double-layer graphene. Using a projector-based renormalization method we show that if a finite voltage difference is applied between the graphene layers electron-hole pairs can be formed and---at very low temperatures---an excitonic instability might emerge in a double-layer graphene structure. The single-particle spectral function near the Fermi surface exhibits a prominent quasiparticle peak, different from neutral (undoped) graphene bilayers. Away from the F…
We study the dynamic effects in the double graphene-layer (GL) structures with the resonant-tunneling (RT) and the negative differential inter-GL conductivity. Using the developed model, which accounts for the excitation of self-consistent oscillations of the electron and hole densities and the ac electric field between GLs (plasma oscillations), we calculate the admittance of the double-GL RT structures as a function of the signal frequency and applied voltages, and the spectrum and increment/decrement of plasma oscillations. Our results show that the electron-hole plasma in the double-GL RT …
We analyze the dynamic operation of an optical modulator based on double graphene-layer(GL) structure utilizing the variation of the GL absorption due to the electrically controlled Pauli blocking effect. The developed device model yields the dependences of the modulation depth on the control voltage and the modulation frequency. The excitation of plasma oscillations in double-GL structure can result in the resonant increase of the modulation depth, when the modulation frequency approaches the plasma frequency, which corresponds to the terahertz frequency for the typical parameter values.
We study the characteristics of photogenerated electron-hole plasma in optically pumped graphene layers at elevated (room) temperatures when the interband and intraband processes of emission and absorption of optical phonons play a crucial role. The electron-hole plasma heating and cooling as well as the effect of nonequilibrium optical phonons are taken into account. % The dependences of the quasi-Fermi energy and effective temperature of optically pumped graphene layers on the intensity of pumping radiation are calculated. The variation of the frequency dependences dynamic conductivity with …
The interband and intraband conductivities of doped graphene were theoretically investigated beyond the linear response. The new dependences of induced currents on frequency and amplitude of external electric field, the graphene temperature and chemical potential were determined for sufficiently strong electric fields in the resonant approximation. Particularly, the saturation of induced currents and the non-linear increase of optical transparency with wave intensity growth were obtained for arbitrary temperatures and doped situation. As contrasted to increase for the interband transitions at …
Graphene is a promising candidate for the development of detectors of Terahertz (THz) radiation. A well-known detection scheme due to Dyakonov and Shur exploits the confinement of plasma waves in a field-effect transistor (FET), whereby a dc photovoltage is generated in response to a THz field. This scheme has already been experimentally studied in a graphene FET [L. Vicarelli et al., Nature Mat. 11, 865 (2012)]. In the quest for devices with a better signal-to-noise ratio, we theoretically investigate a plasma-wave photodetector in which a dc photocurrent is generated in a graphene FET. The r…
Electron beams in two-dimensional systems can provide a useful tool to study energy-momentum relaxation of electrons and to generate microwave radiation stemming from plasma-beam instabilities. Naturally, these two applications cannot coexist: if beam electrons do relax, the beam is stabilized; if instability exists, it strongly distorts the distribution function of beam electrons. In this paper, we study the competition of beam relaxation due to electron-electron (e-e) collisions and development of plasma beam instability in graphene. We find that unstable plasma mode associated with a beam i…
We use a tight-binding model and the random-phase approximation to study the Coulomb excitations in simple-hexagonal-stacking multilayer graphene and discuss the field effects. The calculation results include the energy bands, the response functions, and the plasmon dispersions. A perpendicular electric field is predicted to induce significant charge transfer and thus capable of manipulating the energy, intensity, and the number of plasmon modes. This could be further validated by inelastic light scattering or electron-energy-loss spectroscopy.
We calculate the single-particle spectral function for doped bilayer graphene in the low energy limit, described by two parabolic bands with zero band gap and long range Coulomb interaction. Calculations are done using thermal Green's functions in both the random phase approximation (RPA) and the fully self-consistent GW approximation. RPA (in line with previous studies) yields a spectral function which apart from the Landau quasiparticle peaks shows additional coherent features interpreted as plasmarons, i.e. composite electron-plasmon excitations. In GW the plasmaron becomes incoherent and p…
An analytical theory of the nonlinear electromagnetic response of a two-dimensional (2D) electron system in the second order in the electric field amplitude is developed. The second-order polarizability and the intensity of the second harmonic signal are calculated within the self-consistent-field approach both for semiconductor 2D electron systems and for graphene. The second harmonic generation in graphene is shown to be about two orders of magnitude stronger than in GaAs quantum wells at typical experimental parameters. Under the conditions of the 2D plasmon resonance the second harmonic ra…
We present an experimental observation of non-linear up- and down-converted optical luminescence of graphene and thin graphite subject to picosecond infrared laser pulses. We show that the excitation yields to a high density electron-hole plasma in graphene. It is further shown that the excited charge carries can efficiently exchange energy due to scattering in momentum space. The recombination of the resulting non-equilibrium electron-hole pairs yields to the observed white light luminescence. Due to the scattering mechanism the power dependence of the luminescence is quadratic until it satur…
The influence of GaN nanowires on the optical and electrical properties of graphene deposited on them was studied using Raman spectroscopy and microwave induced electron transport method. It was found that interaction with the nanowires induces spectral changes as well as large enhancement of Raman scattering intensity. Surprisingly, the smallest enhancement (about 30-fold) was observed for the defect induced D' process and the highest intensity increase (over 50-fold) was found for the 2D transition. The observed energy shifts of the G and 2D bands allowed to determine carrier concentration f…
The edges of graphene nanoribbons (GNRs) have attracted much interest due to their potentially strong influence on GNR electronic and magnetic properties. Here we report the ability to engineer the microscopic edge termination of high quality GNRs via hydrogen plasma etching. Using a combination of high-resolution scanning tunneling microscopy and first-principles calculations, we have determined the exact atomic structure of plasma-etched GNR edges and established the chemical nature of terminating functional groups for zigzag, armchair and chiral edge orientations. We find that the edges of …
We report significant changes of optical conductivity in single layer graphene induced by mild oxygen plasma exposure, and explore the interplay between carrier doping, disorder, and many-body interactions from their signatures in the absorption spectrum. The first distinctive effect is the reduction of the excitonic binding energy that can be extracted from the renormalized saddle point resonance at 4.64 eV. Secondly, the real part of the frequency-dependent conductivity is nearly completely suppressed below an exposure-dependent threshold in the near infrared range. The clear step-like suppr…
