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arXiv 1012.3696physics.atom-ph
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三电子能级分子多普勒冷却的展望

Prospects for Doppler cooling of three-electronic-level molecules

J. H. V. Nguyen, B. Odom

摘要:

类似于将激光冷却技术从二能级原子推广到三能级原子,我们考虑了具有中间电子态的分子的多普勒冷却。特别是,我们使用速率方程的方法来模拟冷却的SiO+,其中人口积累在中间状态是防止其寿命短。我们确定,多普勒冷却的SiO+可以完成,而无需从中间状态的光学再泵浦,在造成不希望的宇称翻转和旋转扩散的成本。由于必要的再泵浦需要大量的连续波激光器,飞秒激光器的光脉冲整形被提出作为一个有吸引力的替代方案。其他候选的三电子能级分子也进行了讨论。

英文摘要:

Analogous to the extension of laser cooling techniques from two-level to three-level atoms, Doppler cooling of molecules with an intermediate electronic state is considered. In particular, we use a rate-equation approach to simulate cooling of SiO+, in which population buildup in the intermediate state is prevented by its short lifetime. We determine that Doppler cooling of SiO+ can be accomplished without optically repumping from the intermediate state, at the cost of causing undesirable parity flips and rotational diffusion. Since the necessary repumping would require a large number of continuous-wave lasers, optical pulse shaping of a femtosecond laser is proposed as an attractive alternative. Other candidate three-electron-level molecules are also discussed.

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