arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1012.1385cond-mat.mtrl-sci
收藏

Modelling of epitaxial graphene functionalization

D. W. Boukhvalov

英文摘要:

A new model for graphene, epitaxially grown on silicon carbide is proposed. Density functional theory modelling of epitaxial graphene functionalization by hydrogen, fluorine and phenyl groups has been performed with hydrogen and fluorine showing a high probability of cluster formation in high adatom concentration. It has also been shown that the clusterization of fluorine adatoms provides midgap states in formation due to significant flat distortion of graphene. The functionalization of epitaxial graphene using larger species (methyl and phenyl groups) renders cluster formation impossible, due to the steric effect and results in uniform coverage with the energy gap opening.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑