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arXiv 1011.4471cond-mat.mes-hallquant-ph
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拓扑绝缘体边缘态干涉法实现电荷和自旋电导的全电学控制

Full electrical control of Charge and Spin conductance through Interferometry of Edge States in Topological Insulators

Fabrizio Dolcini

摘要:

我们研究了拓扑绝缘体边缘态的电子干涉测量。我们表明,当边界间耦合诱导在两个量子点接触的四端设置,法布里-珀罗和Aharonov-Bohm的回路过程出现。这些潜在的干扰效应导致完全电可控的系统,其中电荷和自旋线性电导的幅度可以通过栅极电压来调谐,而不施加磁场。特别是,我们发现,在适当的条件下,边界间的耦合可以导致负值的电导。此外,该设置还允许通过选择电压偏置配置来选择性地生成纯电荷或纯自旋电流。

英文摘要:

We investigate electron interferometry of edge states in Topological Insulators. We show that, when inter-boundary coupling is induced at two quantum point contacts of a four terminal setup, both Fabry-Pérot-like and Aharonov-Bohm-like loop processes arise. These underlying interference effects lead to a full electrically controllable system, where the magnitude of charge and spin linear conductances can be tuned by gate voltages, without applying magnetic fields. In particular we find that, under appropriate conditions, inter-boundary coupling can lead to negative values of the conductance. Furthermore, the setup also allows to selectively generate pure charge or pure spin currents, by choosing the voltage bias configuration.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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