We study the response of exciton complexes in semiconductor quantum rings to vertical electric fields, using path integral quantum Monte Carlo simulations. The interaction of a vertical applied field and the piezoelectric fields of the ring with strongly-correlated excitonic complexes switches excitons between two different lateral locations within the ring. This control should be observable through polarizability and dipole measurements, and, for biexcitons, an energy shift beyond the normal Stark shift.
Theory of exciton fine structure in semiconductor quantum dots and its dependence on quantum dot anisotropy and external lateral electric field is presented. The effective exciton Hamiltonian including long range electron-hole exchange interaction is derived within the k*p effective mass approximation (EMA). The exchange matrix elements of the Hamiltonian are expressed explicitly in terms of electron and hole envelope functions. The matrix element responsible for the "bright" exciton splitting is identified and analyzed. An excitonic fine structure for a model quantum dot with quasi- two-dimen…
We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results are consistent with the model, which attributes the LDT to the interaction-induced percolation of the exciton gas through the external potential. We also discuss applications of the lattice potentials fo…
We study the interface exciton at lateral type II heterojunctions of monolayer transition metal dichalcogenides (TMDs), where the electron and hole prefer to stay at complementary sides of the junction. We find that the 1D interface exciton has giant binding energy in the same order as 2D excitons in pristine monolayer TMDs although the effective radius (electron-hole seperation) of interface exciton is much larger than that of 2D excitons. The binding energy, exciton radius and optical dipole strongly depends on the band offset at the junction. The inter-valley coupling induced by the electro…
The fine structure of the neutral exciton in a single self assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. We show that the lateral electric field strongly affects the exciton fine structure splitting due to active manipulation of the single particle wave-functions. Remarkably, the splitting can be tuned over large values and through zero.
We demonstrate the localisation of quantum well excitons in a periodic array of linear traps using photoluminescence experiments. The excitonic traps are induced by applying spatially alternating external voltages via interdigitated metal gates. The localisation originates from the periodical modulation of the strength of the quantum-confined Stark effect in the plane of the quantum well. In our experiments, the trap depth is easily tuned by the voltages applied to the interdigitated gates. Furthermore, we find that a perpendicular magnetic field reduces the exciton diffusion length. In short-…
Atomically precise lateral heterojunctions based on transition metal dichalcogenides provide a new platform for exploring exciton Mott transition in one-dimension. To investigate the intrinsically non-equilibrium Mott transition, we employed ultrafast microscopy with ~ 200 fs temporal resolution to image the transport of different exciton phases in a type II WSe2-WS1.16Se0.84 lateral heterostructure. These measurements visualized the extremely rapid expansion of a highly non-equilibrium electron-hole (e-h) plasma phase with a Fermi velocity up to 3.2*10^6 cm*s-1. An abrupt first-order exciton …
Dipolar excitonic quantum wires at atomically sharp lateral interfaces
ETH Zürich（苏黎世联邦理工学院）；Indian Institute of Technology, Kharagpur（印度理工学院卡格浦尔分校）；National Institute for Materials Science（国立材料研究所）；NTT Research, Inc.（NTT研究院）
The multi-scale computational method of combining first-principles calculation and finite element electromagnetic simulations is used to study plasmon-enhanced interlayer charge transfer (ICT) exciton of 2D lateral and van der Waals MoS2/WS2 heterostructure with 2H phase. The weak ICT excitons are observed in the 2H lateral and van der Waals MoS$_2$/WS$_2$ heterostructures. Theoretical results reveal the physical principle of plexciton resulting from strong coupling between plasmonic and ICT exciton. The weak CT exciton can be strongly enhanced by metal plasmon, can provide a new way to observ…
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and steeper subthreshold swing as compared to conventional tunneling transistors. This is due to an additional tunneling contribution to current stemming from band overlap along the body thickness. However, a critical thickness is necessary to obtain this advantage derived from 'vertical' tunneling. In addition, in ultra small InAs TFET devices, the subthreshold…
We calculate the emission spectrum of neutral and charged excitons in a pair of laterally coupled InGaAs quantum dots with nearly degenerate energy levels. As the interdot distance decreases, a number of changes take place in the emission spectrum which can be used as indications of molecular coupling. These signatures ensue from the stronger tunnel-coupling of trions as compared to that of neutral excitons.
Optically detected resonance spectroscopy has been used to investigate effects of weak random lateral potential energy fluctuations on internal transitions of charged magneto-excitons (trions) in quasi two-dimensional GaAs/AlGaAs quantum-well (QW) structures. Resonant changes in the ensemble photoluminescence induced by far-infrared radiation were studied as a function of magnetic field for samples having: 1) no growth interrupts (short range well-width fluctuations), and 2) intentional growth interrupts (long range monolayer well-width differences). Only bound-to-continuum internal transition…
We present results of atomistic empirical pseudopotential calculations and configuration interaction for excitons, positive and negative trions (X\pm), positive and negative quartons (X2\pm) and biexcitons. The structure investigated are laterally aligned InGaAs quantum dot molecules embedded in GaAs under a lateral electric field. The rather simple energetic of excitons becomes more complex in the case of charged quasiparticles but remains tractable. The negative trion spectrum shows four anticrossings in the presently available range of fields while the positive trion shows two. The magnitud…
We describe the electronic properties of a double dot for which the lateral coupling between the two vertical dots can be controlled in-situ with a center gate voltage (Vc) and the current flows through the two dots in series. When Vc is large and positive, the two dots merge. As Vc is made less positive, two dots are formed whose coupling is reduced. We measure charging diagrams for positive and negative source-drain voltages in the weak coupling regime and observe current rectification due to the Pauli spin blockade when the hyperfine interaction between the electrons and the nuclei is suppr…
We theoretically investigate the energy of the ground state exciton confined to two-dimensional (2D) monolayers with circular shape. Within an effective mass approach employing a nonlocal screening effect on the Coulomb potential energy, we demonstrate how the exciton energy is correlated with the radius of the circle, electron-hole reduced mass, and 2D susceptibility. In addition, we show that a dead layer around the circle edge, into which the electron-hole pair cannot penetrate, is necessary for understanding the energy shift recently observed in monolayer WSe2 quantum dots.
We study the Stark effect for an exciton confined in a pair of vertically coupled quantum dots. A single-band approximation for the hole and a parabolic lateral confinement potential are adopted which allows for the separation of the lateral center-of-mass motion and consequently for an exact numerical solution of the Schrödinger equation. We show that for intermediate tunnel coupling the external electric field leads to the dissociation of the exciton via an avoided crossing of bright and dark exciton energy levels which results in an atypical form of the Stark shift. The electric-field-induc…
We simulate the electron transport in vertical bi-layer nanowire which can be fabricated in molecular beam epitaxy process with lateral confinement potential formed by means of cleaved overgrowth or surface oxidization methods giving rectangular and smooth side confinement, respectively. In calculations we take into account interaction between charge carriers using DFT within local spin density approximation. If magnetic field is perpendicular to the wire axis, pseudogaps are opened in energy dispersion relation E(k) what in conjunction with spin Zeeman shift of spin-up and spin-down subbands …
We study the effect of an electric-field on an electron-hole pair in an asymmetric system of vertically coupled self-assembled quantum dots taking into account their non-perfect alignment. We show that the non-perfect alignment does not qualitatively influence the exciton Stark effect for the electric field applied in the growth direction, but can be detected by application of a perpendicular electric field. We demonstrate that the direction of the shift between the axes of non-aligned dots can be detected by rotation of a weak electric field within the plane of confinement. Already for a near…
We investigate the electronic and optical properties of InAs double quantum dots grown on GaAs (001) and laterally aligned along the [110] crystal direction. The emission spectrum has been investigated as a function of a lateral electric field applied along the quantum dot pair mutual axis. The number of confined electrons can be controlled with the external bias leading to sharp energy shifts which we use to identify the emission from neutral and charged exciton complexes. Quantum tunnelling of these electrons is proposed to explain the reversed ordering of the trion emission lines as compare…
We study an electron-hole pair in a stack of multiple quantum dots in the presence of an external electric field using the configuration interaction approach. We find that the bright energy levels can be grouped into families which are associated with the hole localized in a specific dot of the stack. The exciton energy levels undergo avoided crossings as function of the external electric field with different pattern for each family. We show that the variation of the depths of the dots along the stack can be deduced from the exciton spectrum. In the strong confinement limit the families are mi…
We report excited state emission from p-states at excitation fluences well below ground state saturation in CdSe nanoplatelets. Size dependent exciton ground state-excited state energies and dynamics are determined by three independent methods, time-resolved photoluminescence (PL), time-integrated PL and Hartree renormalized k$\cdot$p calculations -- all in very good agreement. The ground state-excited state energy spacing strongly increases with the lateral platelet quantization. Our results suggest that the PL decay of CdSe platelets is governed by an LO-phonon bottleneck, related to the rep…
In order to fully exploit the potential of transition metal dichalcogenide monolayers (TMD-MLs), the well-controlled creation of atomically sharp lateral heterojunctions within these materials is highly desirable. A promising approach to create such heterojunctions is the local modulation of the electronic structure of an intrinsic TMD-ML via dielectric screening induced by its surrounding materials. For the realization of this non-invasive approach, an in-depth understanding of such dielectric effects is required. We report on the modulations of excitonic transitions in TMD-MLs through the ef…
We demonstrate a novel method for nanowire formation by natural selection during wet chemical etching in boiling Phosphoric acid. It is observed that wire lateral dimensions of sub-10 nm and lengths of 700 nm or more have been naturally formed during the wet etching. The dimension variation is controlled through etching times wherein the underlying cause is the merging of the nearby crystallographic hexagonal etch pits. The emission processes involving excitons are found to be efficient and lead to enhanced emission characteristics. The exciton binding energy is augmented by using quantum conf…
We show that the finite lateral sizes of ultrathin CdSe nanoplatelets strongly affect both their photoluminescence and optical absorption spectra. This is in contrast to the situation in quantum wells, in which the large lateral sizes may be assumed to be infinite. The lateral sizes of the nanoplatelets are varied over a range of a few to tens of nanometers. For these sizes excitons experience in-plane quantum confinement, and their center-of-mass motion becomes quantized. Our direct experimental observation of the discretization of the exciton center-of-mass states can be well understood on t…
Using the charge-conserving Floquet-Green function approach to open quantum systems driven by external time periodic potential, we analyze how spin current pumped (in the absence of any dc bias voltage) by the precessing magnetization of a ferromagnetic (F) layer is injected {\em laterally} into the interface with strong spin-orbit coupling (SOC) and converted into charge current flowing in the same direction. In the case of metallic interface with the Rashba SOC used in experiments [Nature Comm. {\bf 4}, 2944 (2013)], both spin $I^{S_α}$ and charge $I$ current flow within it where $I/I^{S_α} …
Friedrich Schiller University Jena（耶拿弗里德里希·席勒大学）；Technical University Darmstadt（达姆施塔特工业大学）；Ulm University（乌尔姆大学）；National Institute for Materials Science（国立材料研究所）
We report on the charge carrier dynamics in single lateral quantum dot molecules and the effect of an applied electric field on the molecular states. Controllable electron tunneling manifests itself in a deviation from the typical excitonic decay behavior which is strongly influenced by the tuning electric field and inter-molecular Coulomb energies. A rate equation model is developed to gain more insight into the charge transfer and tunneling mechanisms. Non-resonant (phonon-mediated) electron tunneling which changes the molecular exciton character from direct to indirect, and vice versa, is f…
We experimentally investigate the lateral diffusion of dipolar excitons in coupled quantum wells in two (2D) and one (1D) dimensions. In 2D, the exciton expansion obeys non-linear temporal dynamics due to the repulsive dipole pressure at a high exciton density, in accordance with recent reports. In contrast, the observed 1D expansion behaves linearly in time even at high exciton densities. The corresponding 1D diffusion coefficient exceeds the one in 2D by far and depends linearly on the exciton density. We attribute the findings to screening of quantum well disorder by the dipolar excitons.
We describe an interaction mechanism between electron spins in a vertically-stacked double quantum dot that can be used for controlled two-qubit operations. This interaction is mediated by excitons confined within, and delocalized over, the double dot. We show that gates equivalent to the SQRT-SWAP gate can be obtained in times much less than the exciton relaxation time and that the negative effects of hole-mixing and spontaneous emission do not seriously affect these results.
We consider in-plane electrostatic traps for indirect excitons in coupled quantum wells, where the traps are formed by a laterally modulated gate voltage. An intrinsic obstacle for exciton confinement in electrostatic traps is an in-plane electric field that can lead to exciton dissociation. We propose a design to suppress the in-plane electric field and, at the same time, to effectively confine excitons in the electrostatic traps. We present calculations for various classes of electrostatic traps and experimental proof of principle for trapping of indirect excitons in electrostatic traps.
Trion Engineered Multimodal Transistors in Two dimensional Bilayer Semiconductor Lateral Heterostructures
Indian Institute of Technology Kharagpur（印度理工学院卡拉格普尔分校）；Indian Institute of Technology Bombay（印度理工学院孟买分校）；Philipps-University at Marburg（马尔堡菲利普斯大学）；Chalmers University of Technology（查尔姆斯理工大学）
We report on single InGaAs quantum dots embedded in a lateral electric field device. By applying a voltage we tune the neutral exciton transition into resonance with the biexciton using the quantum confined Stark effect. The results are compared to theoretical calculations of the relative energies of exciton and biexciton. Cascaded decay from the manifold of single exciton-biexciton states has been predicted to be a new concept to generate entangled photon pairs on demand without the need to suppress the fine structures splitting of the neutral exciton.
Optical transitions in coupled InAs/InP self-assembled quantum wires are studied within the single-band effective mass approximation including effects due to strain. Both vertically and horizontally coupled quantum wires are investigated and the ground state, excited states and the photoluminescence peak energies are calculated. Where possible we compare with available photo-luminescence data from which it was possible to determine the height of the quantum wires. An anti-crossing of the energy of excited states is found for vertically coupled wires signaling a change of symmetry of the excito…
Technological advances allow for tunable lateral confinement of cold dipolar excitons in coupled quantum wells. We consider theoretically the Josephson effect between exciton condensates in two traps separated by a weak link. The flow of the exciton supercurrent is driven by the dipole energy difference between the traps. The Josephson oscillations may be observed after ensemble average of the time correlation of photons separately emitted from the two traps. The fringe visibility is controlled by the trap coupling and is robust against quantum and thermal fluctuations.
Vertical cavity surface emitting terahertz lasers can be realized in conventional semiconductor microcavities with embedded quantum wells in the strong coupling regime. The cavity is to be pumped optically at half the frequency of the 2p exciton state. Once a threshold population of 2p excitons is achieved, a stimulated terahertz transition populates the lower exciton-polariton branch, and the cavity starts emitting laser light both in the optical and terahertz ranges. The lasing threshold is sensitive to the statistics of photons of the pumping light.
The strong piezoelectric fields accompanying a surface acoustic wave on a semiconductor quantum well structure are employed to dissociate optically generated excitons and efficiently trap the created electron hole pairs in the moving lateral potential superlattice of the sound wave. The resulting spatial separation of the photogenerated ambipolar charges leads to an increase of the radiative lifetime by orders of magnitude as compared to the unperturbed excitons. External and deliberate screening of the lateral piezoelectric fields triggers radiative recombination after very long storage times…
Exciton levels and fine-structure splitting in laterally-coupled quantum dot molecules are studied. The electron and hole tunneling energies as well as the direct Coulomb interaction are essential for the exciton levels. It is found that fine-structure splitting of the two-lowest exciton levels is contributed from the intra- and inter-dot exchange interactions, both of which are largely influenced by the symmetry and tunnel-coupling between the two dots. As the inter-dot separation is reduced, fine-structure splitting of the exciton ground state is largely increased while those of the excited …
The polarization splitting of the exciton ground state in two laterally coupled quantum dots under an in-plane electric field is investigated and its effective tuning is designed. It is found that there are significant Stark effect and anticrossing in energy levels. Due to coupling between inter- and intra-dot states, the absolute value of polarization splitting is significantly reduced, and it could be tuned to zero by the electric field for proper inter-dot separations. Our scheme is interesting for the research on the quantum dots-based entangled-photon source.
Recent experiments have demonstrated strong light-matter coupling between electromagnetic nanoresonators and pristine sheets of two-dimensional semiconductors, and it has been speculated whether these systems can enter the quantum regime operating at the few-polariton level. To address this question, we present a first-principles microscopic quantum theory for the interaction between excitons in an infinite sheet of two-dimensional material and a localised electromagnetic resonator. We find that the light-matter interaction breaks the symmetry of the otherwise translation-invariant system and …
Magnetoluminescence of spatially indirect dipolar excitons collected in 25 nm GaAs/AlGaAs single quantum well within a lateral potential trap has been studied in perpendicular magnetic field in Faraday geometry. The paramagnetic spin splitting of the luminescence line of the heavy-hole excitons in the trap centre is completely compensated at magnetic fields below critical value, around 2 Tesla. The effect of spin-splitting compensation is caused by the exchange interaction in dense exciton Bose gas which is in qualitative agreement with the existing theoretical concepts. In the range of low ma…
For composite complexes -- quasi-two-dimensional (2D) charged magneto-excitons X- -- we propose a new exact classification of states, which is based on magnetic translations. We consider implications of this symmetry for magneto-optical transitions. It is shown, in particular, that in a translationally-invariant system with a simple valence band, the ground triplet X- state is dark in interband transitions at finite magnetic fields B. This exact result calls for the re-interpretation of several previous theoretical studies. We consider the symmetry-breaking effects of spatial lateral confineme…
Exciton-exciton annihilation (EEA) and Auger recombination are detrimental processes occurring in semiconductor optoelectronic devices at high carrier densities. Despite constituting one of the main obstacles for realizing lasing in semiconductor nanocrystals (NCs), the dependencies on NC size are not fully understood, especially for those with both weakly and strongly confined dimensions. Here, we use differential transmission spectroscopy to investigate the dependence of EEA on the physical dimensions of thickness-controlled 2D halide perovskite nanoplatelets (NPls). We find the EEA lifetime…
The properties of an exciton in a type II quantum dot are studied under the influence of a perpendicular applied magnetic field. The dot is modelled by a quantum disk with radius $R$, thickness $d$ and the electron is confined in the disk, whereas the hole is located in the barrier. The exciton energy and wavefunctions are calculated using a Hartree-Fock mesh method. We distinguish two different regimes, namely $d<<2R$ (the hole is located at the radial boundary of the disk) and $d>>2R$ (the hole is located above and below the disk), for which angular momentum $(l)$ transitions are predicted w…
A computational model is presented to calculate the ground state energy of neutral and charged excitons confined in semiconductor quantum dots. The model is based on the variational Quantum Monte Carlo method and effective mass Hamiltonians. Through an iterative Newton-Rhapson process, minimizing the local energy, and (optional) parallelization of random walkers, fast and accurate estimates of both confinement and Coulomb binding energies can be obtained in standard desktop computers. To illustrate the reach of the model, we provide Fortran programs and illustrative calculations for colloidal …
Colloidal semiconductor nanoplatelets exhibit quantum size effects due to their thickness of only few monolayers, together with strong optical band-edge transitions facilitated by large lateral extensions. In this article we demonstrate room temperature strong coupling of the light and heavy hole exciton transitions of CdSe nanoplatelets with the photonic modes of an open planar microcavity. Vacuum Rabi splittings of $66 \pm 1$ meV and $58 \pm 1$ meV are observed for the heavy and light hole excitons respectively, together with a polariton-mediated hybridisation of both transitions. By measuri…
The possibility of electrical manipulation and detection of charged exciton (trion) before its radiative recombination makes it promising for excitonic devices. Using a few-layer graphene/monolayer WS$_{2}$/monolayer graphene vertical heterojunction, we report inter-layer charge transport from top few-layer graphene to bottom monolayer graphene, mediated by coherently formed trion state. This is achieved by using a resonant excitation and varying the sample temperature, the resulting change in the WS$_{2}$ bandgap allows us to scan the excitation around the exciton-trion spectral overlap with …
