自然存活的亚10 nm横向纳米线上基于GaN的超辐射发光二极管中的大激子binding energy
Large excitonic binding energy in GaN based superluminescent light emitting diode on naturally survived sub-10 nm lateral nanowires
摘要：
我们展示了一种新的方法，纳米线形成的自然选择过程中，在沸腾的磷酸湿法化学蚀刻。观察到，在湿法蚀刻期间自然形成了小于10 nm的线横向尺寸和700 nm或更长的长度。通过蚀刻时间控制尺寸变化，其中根本原因是附近的晶体学六边形蚀刻坑的合并。涉及激子的发射过程被发现是有效的，并导致增强的发射特性。激子结合能通过使用量子限制而增强，由此强制电子-空穴波函数的更大重叠。幸存的纳米线几乎是无缺陷的，具有约45 meV的大激子结合能和输出电致发光光的小温度变化。我们已经观察到这些纳米线上形成的LED的超发光行为。在电流密度达到400 A/cm 2之前，没有可观察到的效率下降。因此，本工作提供了一种创新的和成本效益的方式形成的纳米线上的器件制造，并证明了立即实现的性能增强。
英文摘要：
We demonstrate a novel method for nanowire formation by natural selection during wet chemical etching in boiling Phosphoric acid. It is observed that wire lateral dimensions of sub-10 nm and lengths of 700 nm or more have been naturally formed during the wet etching. The dimension variation is controlled through etching times wherein the underlying cause is the merging of the nearby crystallographic hexagonal etch pits. The emission processes involving excitons are found to be efficient and lead to enhanced emission characteristics. The exciton binding energy is augmented by using quantum confinement whereby enforcing greater overlap of the electron-hole wave-function. The surviving nanowires are nearly defect-free, have large exciton binding energies of around 45 meV and a small temperature variation of the output electroluminescent light. We have observed superluminescent behaviour of the LEDs formed on these nanowires. There is no observable efficiency roll off till current densities of 400 A/cm2. The present work thus provides an innovative and cost effective manner of device fabrication on the formed nanowires and proves the immediate performance enhancement achievable.
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