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arXiv 1007.3924cond-mat.mes-hall

Rectification in three-terminal graphene junctions

A. Jacobsen, I. Shorubalko, L. Maag, U. Sennhauser, K. Ensslin

英文摘要:

Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate. Changing the charge carrier type from holes to electrons results in a change of the rectification sign. At a bias < 20mV and at a temperature below 4.2K the sign and the efficiency of the rectification are governed by universal conductance fluctuations.

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