Polar Rectification Effect in Electro-Fatigued SrTiO3 Based Junctions

Graphene-based enhancement of near-field radiative-heat-transfer rectification

We present a thermal device based on the near-field interaction between two substrates made of a polar and a metal-insulator-transition material. As a result of the temperature dependence of the optical properties, this device acts as a thermal rectifier, implying a strong asymmetry in the heat flux when reversing the two temperatures. By covering both substrates with a graphene sheet we show a significant enhancement of rectification coefficient. By investigating the flux spectral properties along with its distance dependence, we prove that this enhancement is associated to a change in the po…

Scalable Memdiodes Exhibiting Rectification and Hysteresis for Neuromorphic Computing

Metal-Nb$_{2}$O$_{5-x}$-metal memdiodes exhibiting rectification, hysteresis, and capacitance are demonstrated for applications in neuromorphic circuitry. These devices do not require any post-fabrication treatments such as filament creation by electroforming that would impede circuit scalability. Instead these devices operate due to Poole-Frenkel defect controlled transport where the high defect density is inherent to the Nb$_{2}$O$_{5-x}$ deposition rather than post-fabrication treatments. Temperature dependent measurements reveal that the dominant trap energy is 0.22 eV suggesting it result…

Visualizing an adjustable WO3/p-GaN heterojunction

The p-n junctions based on typical semiconductors are the elementary units for the modern electronic devices and chip industry. While the rectification property of those p-n junction is usually fixed once the unit is fabricated. Here, we proposed an adjustable n-WO3/p-GaN heterojunction with controllable electronic properties. For the prepared n-WO3/p-GaN heterojunction, it is almost transparent and shows typical p-n junction rectification. While if gradually doping some hydrogen atoms into WO3 layer by a facile electron-proton synergistic route, the heterojunction can be turned dynamically fr…

基于非共振自旋整流效应的微波场矢量探测器

Microwave field vector detector based on the nonresonant spin rectification effect

针对常规微波探测器丢失场矢量特性的问题，提出基于非共振自旋整流效应的微波磁场矢量探测器，通过分析整流电压的依赖关系提取磁场三分量，实现了亚波长分辨率的空间分布测量，为微波集成电路优化与故障诊断提供便捷方案。

$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect

Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have been suggested as ideal electrode materials for MTJs to achieve an extremely large tunnel-magnetoresistance (TMR) effect. Despite their high TMR ratios, MTJs based on HMMs do not exhibit current rectification, i.e., a diode effect, which was achieved in a magnetic tunnel junction concept based on HMMs and type-II spin-gapless semiconductors (SGSs). The proposed…

利用接近100%效率的超导二极管演示光学微波整流

Demonstration of an optical microwave rectification by a superconducting diode with near 100% efficiency

本文研究铌基平面 Josephson 结超导二极管，通过几何不对称自场效应实现单向临界电流完全抑制，并演示75 GHz微波无阈值近理想整流。

Application of a bipolar nanopore as a sensor: rectification as an additional device function

We model and simulate a nanopore sensor that selectively binds analyte ions. This binding leads to the modulation of the local concentrations of the ions of the background electrolyte (KCl), and, thus, to the modulation of the ionic current flowing through the pore. The nanopore's wall carries a bipolar charge pattern with a larger positive buffer region determining the anions as the main charge carriers and the smaller negative binding region containing binding sites. This charge pattern proved to be an appropriate one as shown by a previous comparative study of varying charge patterns (Mádai…

Influence of Perfluorinated Ionomer in PEDOT:PSS on the Rectification and Degradation of Organic Photovoltaic Cells

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is widely used to build optoelectronic devices. However, as a hygroscopic water-based acidic material, it brings major concerns for stability and degradation, resulting in an intense effort to replace it in organic photovoltaic (OPV) devices. In this work, we focus on the perfluorinated ionomer (PFI) polymeric additive to PEDOT:PSS. We demonstrate that it can reduce the relative amplitude of OPV device burn-in, and find two distinct regimes of influence. At low concentrations there is a subtle effect on wetting and work functi…

Current state and perspectives of nanoscale molecular rectifiers

The concept of utilizing a molecule bridged between two electrodes as a stable rectifying device with the possibility of commercialization is a "holy grail" of molecular electronics. Molecular rectifiers do not only exploit the electronic function of the molecules but also offer the possibility of their direct integration into specific nano-electronic circuits. However, even after nearly three decades of extensive experimental and theoretical work, the concept of molecular rectifiers still has many unresolved aspects concerning both the fundamental understanding of the underlying phenomena and…