A microscopic theory of the phonon-induced resistance oscillations in weak perpendicular magnetic fields is presented. The calculations are based on the consideration of interaction of two-dimensional electrons with three-dimensional (bulk) acoustic phonons and take into account anisotropy of the phonon spectrum in cubic crystals. The magnetoresistance is calculated for [001]-grown GaAs quantum wells. The results are in agreement with available experimental data. Apart from the numerical results, analytical expressions for the oscillating part of magnetoresistance are obtained. These expressions are valid in the region of high-order magnetophonon resonances and describe the oscillating magnetoresistance determined by several groups of phonons polarized along certain high-symmetry directions.
Zero-Resistance States (ZRS) are normally associated with superconducting and quantum Hall phases. Experimental detection of ZRS in two-dimensional electron gas (2DEG) systems irridiated by microwave(MW) radiation in a magnetic field has been quite a surprise. We develop a semiclassical transport formalism to explain the phenomena. We find a sequence of Zero-Resistance States (ZRS) inherited from the suppression of Shubnikov-de Haas (SdH) oscillations under the influence of high-frequency and large amplitude microwave radiation. Furthermore, the ZRS are well pronounced and persist up to broad …
In this work we present a theoretical approach to study the effect of an in-plane (parallel) magnetic field on the microwave-assisted transport properties of a two-dimensional electron system. Previous experimental evidences show that microwave-induced resistance oscillations and zero resistance states are differently affected depending on the experimental set-up: two magnetic fields (two-axis magnet) or one tilted magnetic field. In the first case, experiments report a clear quenching of resistance oscillations and zero resistance states. In a tilted field, one obtains oscillations displaceme…
This paper reports on the observation and analysis of magnetotransport phenomena in the nonlinear differential resistance $r_{xx}=dV_{xx}/dI$ of high-mobility InGaAs/InP and GaAs/AlGaAs Hall bar samples driven by direct current, $\Idc$. Specifically, it is observed that Shubnikov -de Haas (SdH) oscillations at large filling factors invert their phase at sufficiently large values of $\Idc$. This phase inversion is explained as being due to an electron heating effect. In the quantum Hall effect regime the $r_{xx}$ oscillations transform into diamond-shaped patterns with different slopes correspo…
Oxide heterostructures allow for detailed studies of 2D electronic transport phenomena. Herein, different facets of magnetotransport in selected spin-orbit-coupled systems are analyzed and characterized by their single-band and multiband behavior, respectively. Experimentally, temperature- and magnetic field-dependent measurements in the single-band system BaPbO$_3$/SrTiO$_3$ reveal strong interplay of weak antilocalization (WAL) and electron-electron interaction (EEI). Within a scheme which treats both, WAL and EEI, on an equal footing a strong contribution of EEI at low temperatures is found…
Magnetic-field response of generalized Wigner crystals in twisted MoTe$_2$
Niels Bohr Institute, University of Copenhagen（哥本哈根大学尼尔斯·玻尔研究所）；Department of Physics, University of Washington（华盛顿大学物理系）；Department of Materials Science and Engineering, University of Washington（华盛顿大学材料科学与工程系）；Research Center for Materials Nanoarchitectonics, National Institute for Materials Science（物质材料研究机构材料纳米架构研究中心）；Research Center for Electronic and Optical Materials, National Institute for Materials Science（物质材料研究机构电子与光学材料研究中心）
In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measurements on a few-layer InSe van der Waals heterostructure with graphene-gated contacts. For high magnetic fields, we observe magnetoresistance minima at even filling factors related to two-fold spin degen…
We present a theory predicting how the linear magnetotransport of a two-dimensional electron gas is modified by a passive electromagnetic cavity resonator where no real photons are injected nor created. For a cavity photon mode with in-plane linear polarization, the dc bulk magnetoresistivity of the 2D electron gas is anisotropic. In the regime of high filling factors of the Landau levels, the envelope of the Shubnikov-de Haas oscillations is profoundly modified and the resistivity can be increased or reduced depending on the system parameters. In the limit of low magnetic fields, the resistiv…
We report complex magnetotransport patterns of the $ν=1$ integer quantum Hall state in a GaAs/AlGaAs sample from the newest generation with a record high electron mobility. The reentrant integer quantum Hall effect in the flanks of the $ν=1$ plateau indicates the formation of the integer quantum Hall Wigner solid, a collective insulator. Moreover, at a fixed filling factor, the longitudinal resistance versus temperature in the region of the integer quantum Hall Wigner solid exhibits a sharp peak. Such sharp peaks in the longitudinal resistance versus temperature so far were only detected for b…
We investigate the magnetotransport properties of a two-dimensional electron gas with anisotropic k-cubic Rashba interaction at the $\rm{LaAlO_3}$/$\rm{SrTiO_3}$ interface. The Landau levels and density of states of the system as well as the magnetotransport coefficients are evaluated. A somehow anomalous beating pattern in low magnetic field regime is found both in the density profile and magnetoresistivity. We discuss the impact of electron density, Landau level broadening and Rashba spin-orbit constant on the appearance of the beatings in low magnetic fields and find that at low electron co…
The complex nature of filling factor $ν$=0 of monolayer graphene is studied in magnetotransport experiments. As function of perpendicular magnetic field a metal-insulator transition is observed, which is attributed to disorder-induced Landau level broadening in the canted antiferromagnetic phase. In the metallic regime a separation of the zeroth Landau level appears and signs of the quantum spin Hall effect are seen near $ν$=0. In addition to local transport, nonlocal transport experiments show results being consistent with helical edge transport.
Low-temperature electron magnetotransport in single GaAs quantum wells with two populated subbands is studied at large filling factors. Magneto-inter-subband (MIS) and acoustic-phonon induced oscillations of the dissipative resistance are found to be coexisting but interfering substantially with each other. The experiments show that amplitude of the MIS-oscillations enhances significantly by phonons, indicating "constructive interference" between the phonon scattering and the intersubband electron transitions. Temperature damping of the quantum oscillations is found to be related to broadening…
We report magnetotransport properties of a two-dimensional electron gas confined at MgZnO/ZnO heterointerface in a high magnetic field up to 26 T. High electron mobility and low charge carrier density enabled the observation of the fractional quantum Hall state nu = 1/3. For an even lower charge carrier density, we observe a transition from quantum Hall liquid to an insulator below the filling factor 1/3. Because of the large electron effective mass in ZnO, we suggest the MgZnO/ZnO heterostructure to be a prototype system for highly correlated quantum Hall physics.
We study a $Al_{x}Ga_{x-1}As$ parabolic quantum wells (PQW) with $GaAs/Al_{x}Ga_{x-1}As$ square superlattice. The magnetotransport in PQW with intentionally disordered short-period superlattice reveals a surprising transition from electrons distribution over whole parabolic well to independent-layer states with unequal density. The transition occurs in the perpendicular magnetic field at Landau filling factor $ν\approx3$ and is signaled by the appearance of the strong and developing fractional quantum Hall (FQH) states and by the enhanced slope of the Hall resistance. We attribute the transiti…
We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable.
We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe$_2$, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic fields. An electron effective mass of 0.8$m_e$ is extracted from the SdH oscillations' temperature dependence; $m_e$ is the bare electron mass. At a fixed electron density the longitudinal resistance shows minima at filling factors (FFs) that are either predominantly odd, or predominantly even, with a parity that changes as the density is tuned. The SdH oscillations are insensitive to an in-plane magnetic field, con…
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of reliable, low resistance Ohmic contacts to surface InSb 2DEGs. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=1$ in magnetic fields of up to $B=18$ T. We show that the electron density is gate-tunable, reproducible, and stable from pinch-off to 4$\times 10^{11}$ cm$^{-2}$, and peak mo…
High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
Institute for Quantum Computing, University of Waterloo（量子计算研究所，滑铁卢大学）；Department of Physics, University of Waterloo（物理系，滑铁卢大学）；Northern Quantum Lights inc.（北方量子灯光公司）；Department of Chemistry, University of Waterloo（化学系，滑铁卢大学）；Department of Electrical and Computer Engineering, University of Waterloo（电气与计算机工程系，滑铁卢大学）
