发表机构
Niels Bohr Institute, University of Copenhagen; Department of Physics, University of Washington; Department of Materials Science and Engineering, University of Washington; Research Center for Materials Nanoarchitectonics, National Institute for Materials Science; Research Center for Electronic and Optical Materials, National Institute for Materials Science（哥本哈根大学尼尔斯·玻尔研究所; 华盛顿大学物理系; 华盛顿大学材料科学与工程系; 物质材料研究机构材料纳米架构研究中心; 物质材料研究机构电子与光学材料研究中心）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文通过磁输运实验研究扭转MoTe$_2$中的分数填充态，发现磁场对三分之二和三分之一填充的广义维格纳晶体产生相反影响，并在半填充处观察到条纹相，揭示了磁控莫尔电荷有序输运的潜力。
AI 中文摘要
我们报道了在扭转MoTe$_2$同质双层膜的层极化区域中分数空穴填充态的磁输运研究。垂直磁场抑制了三分之二填充处的电阻峰，同时将三分之一填充处的电阻峰增强了几个数量级。两者都保持在其公度密度附近。我们认为这些公度态是广义维格纳晶体，其不同的电荷构型定义了不同的磁晶格，导致对自旋极化产生相反的响应。在半填充附近，我们观察到一个性质不同的态，其电阻最大值随磁场近似二次方移动，并表现出与条纹相一致的显著输运各向异性。这些结果揭示了磁输运对分数填充的强烈依赖，并为莫尔电荷有序态中输运的磁控制开辟了途径。
英文摘要
We report a magnetotransport study of fractional hole-filling states in the layer-polarized regime of a twisted MoTe$_2$ homobilayer. A perpendicular magnetic field suppresses the resistance peak at the two-thirds filling while enhancing the one-third peak by several orders of magnitude. Both remain near their commensurate densities. We argue that these commensurate states are generalized Wigner crystals whose distinct charge configurations define different magnetic lattices, leading to contrasting responses to spin polarization. Near half filling, we observe a qualitatively different state whose resistance maximum shifts approximately quadratically with field and exhibits pronounced transport anisotropy consistent with a stripe phase. These results reveal a strong dependence of magnetotransport on fractional filling and open a route to magnetic control of transport in moiré charge-ordered states.
Comments9 pages, 3+7 figures
