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arXiv 0912.4385cond-mat.mes-hall
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半导体表面杂质附近局域隧穿电导的Fano共振空间效应

Spatial effects of Fano resonance in local tunneling conductivity in vicinity of impurity on semiconductor surface

V. N. Mantsevich, N. S. Maslova

摘要:

我们给出了在较宽的偏压范围内,杂质原子附近局域隧穿电导空间分布的详细理论研究结果。我们观察到Fano共振在隧穿导电性中的作用,这是由于通过杂质能级的共振隧穿沟道与隧穿接触引线之间的直接隧穿沟道之间的干涉引起的。我们已经发现,隧道通道之间的干扰强烈修改的形式的隧道电导率测量的扫描隧道显微镜/光谱(STM/STS)取决于距离值的杂质。

英文摘要:

We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We have found that interference between tunneling channels strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS) depending on the distance value from the impurity.

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