We consider transport in the Poissonian regime between edge states in the quantum Hall effect. The backscattering potential is assumed to be arbitrary, as it allows for multiple tunneling paths. We show that the Schottky relation between the backscattering current and noise can be established in full generality: the Fano factor corresponds to the electron charge (the quasiparticle charge) in the integer (fractional) quantum Hall effect, as in the case of purely local tunneling. We derive an analytical expression for the backscattering current, which can be written as that of a local tunneling current, albeit with a renormalized tunneling amplitude which depends on the voltage bias. We apply our results to a separable tunneling amplitude which can represent an extended point contact in the integer or in the fractional quantum Hall effect. We show that the differential conductance of an extended quantum point contact is suppressed by the interference between tunneling paths, and it has an anomalous dependence with respect to the bias voltage.
We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the anti-parallel configuration is close to unity, it is observed to be typically 0.91\pm0.01 in the parallel configuration. It indicates the sub-Poissonian process of the electron tunneling in the parallel configuration due to the relevance of the spin-dependent coherent transport in the low bias regime.
Edge states of two-dimensional topological insulators are helical and single-particle backscattering is prohibited by time-reversal symmetry. In this work, we show that an isotropic exchange coupling of helical edge states (HES) to a spin 1/2 impurity subjected to a magnetic field results in characteristic backscattering current noise (BCN) as a function of bias voltage and tilt angle between the direction of the magnetic field and the quantization axis of the HES. In particular, we find transitions from sub-Poissonian (antibunching) to super-Poissonian (bunching) behavior as a direct conseque…
We report our studies of the shot noise spectrum in tunneling through an interacting quantum dot when an additional single-level quantum dot without tunnel coupling to leads is coherently side-connected to it. We show that the zero-frequency shot noise could reach a super-Poissonian value for appropriate ratios between dot-dot hoppings and dot-lead couplings, but the current is independent on the hopping. Moreover, the frequency spectrum of shot noise shows an obvious peak at the Rabi frequency, which is controllable by tuning the dot-lead couplings.
We investigate qubit lasing in the strong coupling limit. The qubit is given by a Cooper-pair box, and population inversion is established by an additional third state, which can be addressed via quasiparticle tunneling. The coupling strength between oscillator and qubit is assumed to be much higher than the quasiparticle tunneling rate. We find that the photon number distribution is sub-Poissonian in this strong coupling limit.
We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots.
We present the results of local tunneling conductivity spatial distribution detailed theoretical investigations in vicinity of impurity atom for a wide range of applied bias voltage. We observed Fano resonance in tunneling conductivity resulting from interference between resonant tunneling channel through impurity energy level and direct tunneling channel between the tunneling contact leads. We have found that interference between tunneling channels strongly modifies form of tunneling conductivity measured by the scanning tunneling microscopy/spectroscopy (STM/STS) depending on the distance va…
We have performed temperature dependent tunneling experiments through a single impurity in an asymmetric vertical double barrier tunneling structure. In particular in the charging direction we observe at zero magnetic field a clear shift in the onset voltage of the resonant tunneling current through the impurity. With a magnetic field applied the shift starts to disappear. The experimental observations are explained in terms of resonant tunneling through a spin degenerate impurity level.
The STM tunneling through a quantum wire (QW) with a side-attached impurity (atom, island) is investigated using a tight-binding model and the nonequilibrium Keldysh Green function method. The impurity can be coupled to one or more QW atoms. The presence of the impurity strongly modifies the local density of states of the wire atoms, thus influences the STM tunneling through all the wire atoms. The transport properties of the impurity itself are also investigated mainly as a function of the wire length and the way it is coupled to the wire. It is shown that the properties of the impurity itsel…
Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient spin injection, and it is therefore crucial to distinguish between signatures of electrical spin injection and impurity-driven effects in the tunnel barrier. Here we demonstrate an impurity-assisted tunneling magnetoresistance effect in nonmagnetic-insulator-nonmagnetic and ferromagnetic-insulator-nonmagnetic tunnel barriers. In both cases, the effect refle…
A theoretical and experimental study of transport in a low doped multiple quantum well structure shows that impurity bands are essential in understanding the electronic transport both with and without terahertz irradiation. A full self-contained model, which involves only the nominal parameters of the sample, agrees quantitatively with a wide range of experiments.
We report a combined theoretical and experimental study of electrical transport in weakly-coupled doped superlattices. Our calculations exhibit negative differential conductivity at sufficiently high electric fields for all dopings. In low-doped samples the presence of impurity bands modifies the current-voltage characteristics substantially and we find two different current peaks whose relative height is changing with the electron temperature. These findings can explain the observation of different peaks in the current-voltage characteristics with and without external THz irradiation in low-d…
We present time-resolved measurements of electron transport through a quantum dot. The measurements were performed using a nearby quantum point contact as a charge detector. The rates for tunneling through the two barriers connecting the dot to source and drain contacts could be determined individually. In the high bias regime, the method was used to probe excited states of the dot. Furthermore, we have detected bunching of electrons, leading to super-Poissonian noise. We have used the framework of the full counting statistics (FCS) to model the experimental data. The existence of super-Poisso…
Resonant-impurity scanning tunneling spectroscopy in altermagnets: dual Fano resonance and Landau-quantization-induced nodal spin contrast
National Key Laboratory of Computational Physics, Institute of Applied Physics and Computational Mathematics（计算物理国家重点实验室，应用物理与计算数学研究所）；Graduate School, China Academy of Engineering Physics（中国工程物理研究院研究生院）；School of Electronic and Information Engineering, Zhongshan Institute, University of Electronic Science and Technology of China（电子科技大学中山学院电子与信息工程学院）；School of Physics and Physical Engineering, Qufu Normal University（曲阜师范大学物理与光电工程学院）
We consider the transition of electron between two quantum dots in which the discrete levels are swept past each other with a constant velocity. If a direct tunneling between the dot levels was allowed, an electron will be transferred between the dots when the levels cross. This transfer is described in terms of the conventional Landau-Zener theory. We assume that direct tunneling between the dots is forbidden. Rather, the transfer is due to the resonant tunneling via a discrete impurity level separating the dots. Then the description of the electron transfer reduces to a threestate (two dots …
Quantum critical behavior in the two-impurity Kondo model requires the distinct separation of two scales, T_K >> T*, where T_K is the Kondo temperature and T* is the scale at which the system renormalizes away from the quantum critical point to a stable Fermi liquid fixed point. We provide a derivation of T* based on the renormalization group to lowest order. This result is confirmed by a numerical renormalization group (NRG) analysis which supplements the analytic derivation with additional quantitative precision. The form of the low-energy Fermi liquid fixed point is derived and subsequently…
Spatial distribution of local tunneling conductivity was investigated for deep and shallow impurities on semiconductor surfaces. Non-equilibrium Coulomb interaction and interference effects were taken into account and analyzed theoretically with the help of Keldysh formalism. Two models were investigated: mean field self-consistent approach for shallow impurity state and Hubbard-{I} model for deep impurity state. We have found that not only above the impurity but also at the distances comparable to the lattice period both effects interference between direct and resonant tunneling channels and …
We develop a very general perturbative theory of time-dependent transport in a weak tunneling junction which is independent of experimental details and on many-body correlated states in the coupled conductors. These can be similar or different, with arbitrary internal or mutual interactions, superconducting correlations, disorder, and coupled to an electromagnetic environment or other quantum systems. The junction can be spatially extended, and is subject, simultaneously, to time-dependent voltage, local magnetic field and modulation of the tunneling amplitudes. All observables at arbitrary fr…
We study the Coulomb blockade in a grain coupled to a lead via a resonant impurity level. We show that the strong energy dependence of the transmission coefficient through the impurity level can have a dramatic effect on the quantization of the grain charge. In particular, if the resonance is sufficiently narrow, the Coulomb staircase shows very sharp steps even if the transmission through the impurity at the Fermi energy is perfect. This is in contrast to the naive expectation that perfect transmission should completely smear charging effects.
We demonstrate that a quantum spin Hall current, spontaneously generated at the edge of a two-dimensional topological insulator, acts as a source of spin-pumping for a magnetic impurity with uniaxial anisotropy. One can then manipulate the impurity spin direction by means of an electrical current without using either magnetic electrodes or an external magnetic field. Furthermore we show that the unique properties of the quantum spin Hall topological state have profound effects on the inelastic electron tunneling spectrum of the impurity. For low current densities inelastic spin-flip events do …
The electric conductance of a strip of undoped graphene increases in the presence of a disorder potential, which is smooth on atomic scales. The phenomenon is attributed to impurity-assisted resonant tunneling of massless Dirac fermions. Employing the transfer matrix approach we demonstrate the resonant character of the conductivity enhancement in the presence of a single impurity. We also calculate the two-terminal conductivity for the model with one-dimensional fluctuations of disorder potential by a mapping onto a problem of Anderson localization.
We report the experimental observation of sub-Poissonian shot noise in single magnetic tunnel junctions, indicating the importance of tunneling via impurity levels inside the tunnel barrier. For junctions with weak zero-bias anomaly in conductance, the Fano factor (normalized shot noise) depends on the magnetic configuration being enhanced for antiparallel alignment of the ferromagnetic electrodes. We propose a model of sequential tunneling through nonmagnetic and paramagnetic impurity levels inside the tunnel barrier to qualitatively explain the observations.
We investigate the conductance and zero-frequency shot noise of interacting, multi-level quantum dots coupled to leads. We observe that co-tunneling assisted sequential tunneling (CAST) processes play a dominant role in the transition region from Coulomb blockade to sequential tunneling. We analyze for intermediate coupling strength the dependence of the conductance due to CAST processes on temperature, coupling constant, and gate voltage. Remarkably, the width of the CAST transport feature scales only with temperature, but not with the coupling constant. While the onset of inelastic co-tunnel…
We show that the scaling exponent for tunneling into a quantum wire in the "Coulomb Tonks gas" regime of impenetrable, but otherwise free, electrons is affected by impurity scattering in the wire. The exponent for tunneling into such a wire thus depends on the conductance through the wire. This striking effect originates from a many-body scattering resonance reminiscent of the Kondo effect. The predicted anomalous scaling is stable against weak perturbations of the ideal Tonks gas limit at sufficiently high energies, similar to the phenomenology of a quantum critical point.
We report measurements of current noise auto- and cross-correlation in a tunable quantum dot with two or three leads. As the Coulomb blockade is lifted at finite source-drain bias, the auto-correlation evolves from super-Poissonian to sub-Poissonian in the two-lead case, and the cross-correlation evolves from positive to negative in the three-lead case, consistent with transport through multiple levels. Cross-correlations in the three-lead dot are found to be proportional to the noise in excess of the Poissonian value in the limit of weak output tunneling.
We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain-voltage for several consecutive electron numbers on the quantum dot. For certain configurations we observe super-Poissonian statistics for bias voltages at which excited states become accessible. The associated counting distributions interestingly show a bimodal characteristic. Analyzing the time dependence of the number of electron …
We evaluate tunneling rates into/from a voltage biased quantum wire containing weak backscattering defect. Interacting electrons in such a wire form a true nonequilibrium state of the Luttinger liquid (LL). This state is created due to inelastic electron backscattering leading to the emission of nonequilibrium plasmons with typical frequency $\hbar ω\leq U$. The tunneling rates are split into two edges. The tunneling exponent at the Fermi edge is positive and equals that of the equilibrium LL, while the exponent at the side edge $E_F-U$ is negative if Coulomb interaction is not too strong.
In a recent experiment, Hirjibehedin {\it et al.} [Science {\bf 317}, 1199 (2007)] performed inelastic tunneling spectroscopy of a single iron atom absorbed on a nonmagnetic substrate. The observed steps in the differential conductance marked the spin excitation energies. In this Letter, we explain observed nonmonotonicities in the differential conductance by a nonequilibrium population of the atom spin states. Furthermore, we predict super-Poissonian current noise due to this nonequilibrium situation. By introducing an anisotropic relaxation channel we are also able to explain the remarkable …
We have performed the numerical modeling of Ge(111)-(2x1) surface electronic properties in vicinity of P donor impurity atom located near the surface. We have found a notable increase of surface $LDOS$ around surface dopant near the bottom of empty surface states band $π^*$, which we called split state due to its limited spatial extent and energetic position inside the band gap. We show, that despite of well established bulk donor impurity energy level position at the very bottom of conduction band, surface donor impurity on Ge(111)-(2x1) surface might produce energy level below Fermi energy, …
We study the noise of the cotunneling current through one or several tunnel-coupled quantum dots in the Coulomb blockade regime. The various regimes of weak and strong, elastic and inelastic cotunneling are analyzed for quantum-dot systems (QDS) with few-level, nearly-degenerate, and continuous electronic spectra. We find that in contrast to sequential tunneling where the noise is either Poissonian (due to uncorrelated tunneling events) or sub-Poissonian (suppressed by charge conservation on the QDS), the noise in inelastic cotunneling can be super-Poissonian due to switching between QDS state…
Scanning tunneling spectroscopic studies of Bi2Se3 epitaxial films on Si (111) substrates reveal highly localized unitary impurity resonances associated with non-magnetic quantum impurities. The strength of the resonances depends on the energy difference between the Fermi level ({E_F}) and the Dirac point ({E_D}) and diverges as {E_F} approaches {E_D}. The Dirac-cone surface state of the host recovers within ~ 2Å spatial distance from impurities, suggesting robust topological protection of the surface state of topological insulators against high-density impurities that preserve time reversal s…
Destructive interference of single-electron tunneling between three quantum dots can trap an electron in a coherent superposition of charge on two of the dots. Coupling to external charges causes decoherence of this superposition, and in the presence of a large bias voltage each decoherence event transfers a certain number of electrons through the device. We calculate the counting statistics of the transferred charges, finding a crossover from sub-Poissonian to super-Poissonian statistics with increasing ratio of tunnel and decoherence rates.
Single-electron tunneling processes through a double quantum dot can induce a lasing state in an electromagnetic resonator which is coupled coherently to the dot system. Here we study the noise properties of the transport current in the lasing regime, i.e., both the zero-frequency shot noise as well as the noise spectrum. The former shows a remarkable super-Poissonian behavior when the system approaches the lasing transition, but sub-Poissonian behavior deep in the lasing state. The noise spectrum contains information about the coherent dynamics of the coupled dot-resonator system. It shows pr…
We investigate the zero-frequency shot noise of electronic tunneling through a single quantum dot (SQD) and coherently coupled quantum dots (CQD) taking into account the Coulomb interaction. Within Hartree-Fock approximation, the analytical expressions of current and zero-frequency shot noise are self-consistently derived in the framework of full counting statistics for the both systems. We demonstrate that the correction term of zero-frequency shot noise induced by the intradot Coulomb interaction is almost negligible compared to the noninteracting shot noise in a SQD, while in a CQD the inte…
We derive general expressions for the current and shot noise, taking into account non-Markovian memory effects. In generalization of previous approaches our theory is valid for arbitrary Coulomb interaction and coupling strength and is applicable to quantum dots and more complex systems like molecules. A diagrammatic expansion up to second-order in the coupling strength, taking into account co-tunneling processes, allows for a study of transport in a regime relevant to many experiments. As an example, we consider a single-level quantum dot, focusing on the Coulomb-blockade regime. We find supe…
We present exact results on the non-equilibrium current fluctuations for 2 quantum dots in series throughout a crossover from non-Fermi liquid to Fermi liquid behavior described by the 2 impurity Kondo model. The result corresponds to resonant tunneling of carriers of charge $2e$ for a critical inter-impurity coupling. At low energy scales, the result can be understood from a Fermi liquid approach that we develop and use to also study non-equilibrium transport in an alternative double dot realization of the 2 impurity Kondo model under current experimental study.
In this paper, we study Klein tunneling in random media. To this purpose, we simulate the propagation of a relativistic Gaussian wavepacket through a graphene sample with randomly distributed potential barriers (impurities). The simulations, based on a relativistic quantum lattice Boltzmann method, permit to compute the transmission coefficient across the sample, thereby providing an estimate for the conductivity as a function of impurity concentration and strength of the potentials. It is found that the conductivity loss due to impurities is significantly higher for wave-packets of massive pa…
We discuss transport through interferometer formed by helical edge states tunnel-coupled to metallic leads. We focus on the experimentally relevant case of relatively high temperature as compared to the level spacing and discuss a response of the setup to the external magnetic flux $ϕ$ (measured in units of flux quantum) piercing the area encompassed by edge states. We demonstrate that tunneling conductance of the interferometer is structureless in ballistic case but shows a sharp antiresonances, as a function of magnetic flux $ϕ$ - with the period 1/2 - in the presence of magnetic impurity. W…
We analyze charge tunneling statistics and current noise in a superconducting single-electron transistor in a regime where the Josephson-quasiparticle cycle is the dominant mechanism of transport. Due to the interplay between Coulomb blockade and Josephson coherence, the probability distribution for tunneling events strongly deviates from a Poissonian and displays a pronounced even--odd asymmetry in the number of transmitted charges. The interplay between charging and coherence is reflected also in the zero-frequency current noise which is significantly quenched when the quasi-particle tunneli…
Current and its noise in a ferromagnetic double tunnel barrier device with a small spacer particle were studied in the framework of the sequential tunneling approach. Analytical formulae were derived for electron tunneling through the spacer particle containing only a single energy level. It was shown that Coulomb interactions of electrons with a different spin orientation lead to an increase of the tunnel magnetoresistance. Interactions can also be responsible for the negative differential resistance. A current noise study showed, which relaxation processes can enhance or reduce fluctuations …
This paper depicts the actual variation of gate induced drain leakage current with impurity doping concentration by complete qualitative and quantitative approach. De Casteljaus algorithm is applied to describe the band to band tunneling in a thin gate oxide nMOSFET and the results are remarkably matched. Moreover for the very first time, the dependency of the leakage current over impurity density in the MOSFET drain region is explained in the context of pure geometrical approach. Surprisingly one of the proportionality constant exactly behaves like impurity gradient which results same charact…
Motivated by a recent experiment on nonlinear tunneling in a suspended Carbon nanotube connected to two normal electrodes [S. Sapmaz, {\it et al}., Phys. Rev. Lett. {\bf 96}, 26801 (2006)], we investigate nonequilibrium vibration-mediated sequential tunneling through a molecular quantum dot with two electronic orbitals asymmetrically coupled to two electrodes and strongly interacting with an internal vibrational mode, which is itself weakly coupled to a dissipative phonon bath. For this purpose, we establish rate equations using a generic quantum Langevin equation approach. Based on these equa…
We investigate transport through a single impurity in metallic zigzag carbon nanotube and find the conductance sensitively depends on the impurity strength and the bias voltage. It is rather interesting that interplay between the current-carrying scattering state and evanescent modes leads to rich phenomena including resonant backward scattering, perfect tunneling and charge accumulations. In addition, we also find a dual relation between the backscattered conductance and the charge accumulation. At the end, relevance to the experiments is discussed.
We theoretically analyze a state-of-the-art experimental method based on a combination of electron spin resonance and scanning tunneling microscopy (ESR-STM), to directly probe the spin fluctuations in the Kondo effect. The Kondo impurity is exchange coupled to the probe spin, and the ESR-STM setup detects the small level shifts in the probe spin induced by the spin fluctuations of the Kondo impurity. We use the open quantum system approach by regarding the probe spin as the "system" and the Kondo impurity spin as the fluctuating "bath" to evaluate the resonance line shifts in terms of the dyn…
Conventional and spin-related thermoelectric effects in transport through a magnetic tunnel junction with a large-spin impurity, such as a magnetic molecule or atom, embedded into the corresponding barrier are studied theoretically in the linear-response regime. The impurity is described by the giant spin Hamiltonian, with both uniaxial and transverse magnetic anisotropy taken into account. Owing to the presence of transverse component of magnetic anisotropy, spin of a tunneling electron can be reversed during scattering on the impurity, even in the low temperature regime. This reversal appear…
A comprehensive theory is presented for the voltage, temperature, and spatial dependence of the tunneling current between a scanning tunneling microscope (STM) tip and a metallic surface with an individual magnetic adatom. Modeling the adatom by a nondegenerate Anderson impurity, a general expression is derived for a weak tunneling current in terms of the dressed impurity Green function, the impurity-free surface Green function, and the tunneling matrix elements. This generalizes Fano's analysis to the interacting case. The differential-conductance lineshapes seen in recent STM experiments wit…
We develop a non-Markovian full counting statistics formalism taking into account both the sequential tunneling and cotunneling based on the exact particle number resolved time-convolutionless master equation and the Rayleigh-Schrödinger perturbation theory. Then, we study the influences of the quantum coherence and the cotunneling assisted sequential tunneling processes on the non-Markovian full counting statistics of electron tunneling through an open quantum system, which consists of a side-coupled double-quantum-dot molecule weakly coupled to two electron reservoirs. We demonstrate that in…
We analyze shot noise in a magnetic tunnel junction with a two-level quantum dot attached to the magnetic electrodes. The considerations are limited to the case when some transport channels are suppressed at low temperatures. Coupling of the two dot's levels to the electrodes are assumed to be generally different and also spin-dependent. To calculate the shot noise we apply the approach based on the full counting statistics. The approach is used to account for experimental data obtained in magnetic tunnel junctions with organic barriers. The experimentally observed Fano factors correspond to t…
We have theoretically studied the full counting statistics of electron transport through a single-molecule magnet (SMM) with an arbitrary angle between the applied magnetic field and the SMM's easy axis above the sequential tunneling threshold, since the angle $θ$ cannot be controlled in present-day SMM experiments. In the absence of the small transverse anisotropy, when the coupling of the SMM with the incident-electrode is stronger than that with the outgoing-electrode, i.e., $Γ_{L}/Γ_{R}\gg1$, the maximum peak of shot noise first increases and then decreases with increasing $θ$ from 0 to $0…
Single electron tunneling through a single impurity level is used to probe the fluctuations of the local density of states in the emitter. The energy dependence of quasi-particle relaxation in the emitter can be extracted from the damping of the fluctuations of the local density of states (LDOS). At larger magnetic fields Zeeman splitting is observed.
Spin-dependent transport through a multilevel quantum dot weakly coupled to ferromagnetic leads is analyzed theoretically by means of the real-time diagrammatic technique. Both the sequential and cotunneling processes are taken into account, which makes the results on tunnel magnetoresistance (TMR) and shot noise applicable in the whole range of relevant bias and gate voltages. Suppression of the TMR due to inelastic cotunneling and super-Poissonian shot noise have been found in some of the Coulomb blockade regions. Furthermore, in the Coulomb blockade regime there is an additional contributio…
A general master equation is derived to describe an electromechanical single-dot transistor in the Coulomb blockade regime. In the equation, Fermi distribution functions in the two leads are taken into account, which allows one to study the system as a function of bias voltage and temperature of the leads. Furthermore, we treat the coherent interaction mechanism between electron tunneling events and the dynamics of excited vibrational modes. Stationary solutions of the equation are numerically calculated. We show current through the oscillating island at low temperature appears step like chara…
We study the effect of impurities in superconducting graphene and discuss their influence on the local electronic properties. In particular, we consider the case of magnetic and non-magnetic impurities being either strongly localized or acting as a potential averaged over one unit cell. The spin dependent local density of states is calculated and possibilities for visualizing impurities by means of scanning tunneling experiments is pointed out. A possibility of identifying magnetic scatters even by non spin-polarized scanning tunneling spectroscopy is explained.
Two-dimensional ($2$D) semi-Dirac systems, such as $2$D black phosphorus and arsenene, can exhibit a rich topological phase transition between insulating, semi-Dirac, and band inversion phases when subjected to an external modulation. How these phase transitions manifest within the quantum transport and shot noise signatures remain an open question thus far. Here, we show that the Fano factor converges to the universal $F\approx0.179$ at the semi-Dirac phase, and transits between the sub-Poissonian ($F\approx1/3$) and the Poissonian shot noise ($F\approx1$) limit at the band inversion and the …
Employing the Anderson impurity model, we study tunneling properties through an ideal quantum dot near the conductance minima. Considering the Coulomb blockade and the quantum confinement on an equal footing, we have obtained current contributions from various types of tunneling processes; inelastic cotunneling, elastic cotunneling, and resonant tunneling of thermally activated electrons. We have found that the inelastic cotunneling is suppressed in the quantum confinement limit, and thus the conductance near its minima is determined by the elastic cotunneling at low temperature ($k_BT \ll Γ$,…
We develop a general approach to nonequilibrium nanostructures formed by one-dimensional channels coupled by tunnel junctions and/or by impurity scattering. The formalism is based on nonequilibrium version of functional bosonization. A central role in this approach is played by the Keldysh action that has a form reminiscent of the theory of full counting statistics. To proceed with evaluation of physical observables, we assume the weak-tunneling regime and develop a real-time instanton method. A detailed exposition of the formalism is supplemented by two important applications: (i) tunneling i…
A systematic study is made on the time-dependent dynamic transport characteristics of the side-coupled double quantum-impurity system based on the hierarchical equations of motion. It is found that the transport current behaves like a single quantum dot when the coupling strength is low during tunneling or coulomb coupling. The dynamic current oscillates due to the temporal coherence of the electron tunneling device only when the tunneling transition is coupled. The oscillation frequency of the transport current is related to the step voltage applied by the lead, while the $T$, e-e interaction…
We address local inelastic scattering from vibrational impurity adsorbed onto graphene and the evolution of the local density of electron states near the impurity from weak to strong coupling regime. For weak coupling the local electronic structure is distorted by inelastic scattering developing peaks/dips and steps. These features should be detectable in the inelastic electron tunneling spectroscopy, $d^2I/dV^2$, using local probing techniques. Inelastic Friedel oscillations distort the spectral density at energies close to the inelastic mode. In the strong coupling limit, a local negative $U…
