双轴压应变下外延FeSe0.5Te 0.5薄膜的Tc= 21 K
Tc=21K in epitaxial FeSe0.5Te0.5 thin films with biaxial compressive strain
摘要：
采用脉冲激光烧蚀法在不同衬底上生长了不同厚度的高纯外延FeSe 0. 5 Te 0. 5薄膜。通过改变薄膜厚度，观察到Tc高达21 K，明显大于体值。结构分析表明，a轴随薄膜厚度的变化显着，并线性相关的Tc。后者的结果表明，在提高Tc的压缩应变的重要作用。Tc还与Fe-（Se，Te）键长和键角有关，表明有进一步增强的可能。
英文摘要：
High purity epitaxial FeSe0.5Te0.5 thin films with different thickness were grown by Pulsed Laser Ablation on different substrates. By varying the film thickness, Tc up to 21K were observed, significantly larger than the bulk value. Structural analyses indicated that the a axis changes significantly with the film thickness and is linearly related to the Tc. The latter result indicates the important role of the compressive strain in enhancing Tc. Tc is also related to both the Fe-(Se,Te) bond length and angle, suggesting the possibility of further enhancement.
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