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arXiv 0911.0509hep-ph
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低温手征磁效应

Chiral magnetic effect at low temperature

Seung-il Nam

摘要:

本文研究了低温T < T^chi_c,强磁场B = B_0x_3下的手征磁效应。为此,我们采用了具有有限瞬数涨落Δ的瞬子真空组态,它与非平凡拓扑荷Qt有关。我们计算了表征CME的局域手征密度<rho_chi>、手征电荷密度<n_chi>和感应电磁流<j_mu>的真空期望值随T和B_0的变化。我们观察到,纵向电磁电流比横向电磁电流大得多,|j_perp/j_parallel| ~ Q_t,<n_chi>等于|< j_{3,4} >|.随着T的增加,CME对磁场的敏感性也随之降低,这是由于瞬子的减小,即隧穿效应。在我们的框架内,瞬子的贡献CME变得几乎可以忽略不计超过T~300 MeV。

英文摘要:

We investigate the chiral magnetic effect (CME) under a strong magnetic field B = B_0 x_3 at low temperature T < T^chi_c. For this purpose, we employ the instanton vacuum configuration with the finite instanton-number fluctuation Delta, which relates to the nontrivial topological charge Q_t. We compute the vacuum expectation values of the local chiral density <rho_chi>, chiral charge density <n_chi> and induced electromagnetic current <j_mu>, which signal the CME, as functions of T and B_0. We observed that the longitudinal EM current is much larger than the transverse one, |j_perp/j_parallel| ~ Q_t, and the <n_chi> equals to the |<j_{3,4}>|. It also turns out that the CME becomes insensitive to the magnetic field as T increases, according to the decreasing instanton, i.e. tunneling effect. Within our framework, the instanton contribution to the CME becomes almost negligible beyond T~300 MeV.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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