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arXiv 0909.3886cond-mat.mes-hallcond-mat.mtrl-sci
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石墨烯纳米带中的无序诱导能隙行为

Disorder-induced gap behavior in graphene nanoribbons

Patrick Gallagher, Kathryn Todd, David Goldhaber-Gordon

摘要:

我们研究了标准化的30 nm宽度和不同长度的石墨烯纳米带的输运性质。我们发现,在运输中观察到的间隙的范围作为费米能量的函数在这些带(“运输间隙”)没有强烈的依赖于带的长度,而作为源漏电压的函数的间隙的范围(“源漏间隙”)随着带的长度增加。我们退火的带,以减少无序势的振幅,并发现,运输的差距都收缩,并移动到接近零栅电压。相反,退火不会系统地影响源极-漏极间隙。我们的结论是,运输间隙反映了整体实力的背景无序势,而源漏间隙是敏感地依赖于它的细节。我们的研究结果支持的模型,在石墨烯纳米带中的传输发生通过量子点形成沿带由于带电杂质诱导的无序势。

英文摘要:

We study the transport properties of graphene nanoribbons of standardized 30 nm width and varying lengths. We find that the extent of the gap observed in transport as a function of Fermi energy in these ribbons (the "transport gap") does not have a strong dependence on ribbon length, while the extent of the gap as a function of source-drain voltage (the "source-drain gap") increases with increasing ribbon length. We anneal the ribbons to reduce the amplitude of the disorder potential, and find that the transport gap both shrinks and moves closer to zero gate voltage. In contrast, annealing does not systematically affect the source-drain gap. We conclude that the transport gap reflects the overall strength of the background disorder potential, while the source-drain gap is sensitively dependent on its details. Our results support the model that transport in graphene nanoribbons occurs through quantum dots forming along the ribbon due to a disorder potential induced by charged impurities.

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