Doping dependence of the chemical potential and surface electronic structure in YBa2Cu3O6+x and La2-xSrxCuO4 using hard x-ray photoemission spectroscopy
Kalobaran Maiti, Jorg Fink, Sanne de Jong, Mihaela Gorgoi, Chengtian Lin, Markus Raichle, Vladimir Hinkov, Michael Lambacher, Andreas Erb, Mark S. Golden
The electronic structure of YBa2Cu3O6+x and La2-xSrxCuO4 for various values of x has been investigated using hard x-ray photoemission spectroscopy. The experimental results establish that the cleaving of YBa2Cu3O6+x compounds occurs predominantly in the BaCuO3 complex leading to charged surfaces at higher x and to uncharged surfaces at lower x values. The bulk component of the core level spectra exhibits a shift in binding energy as a function of x, from which a shift of the chemical potential as a function of hole concentration in the CuO2 layers could be derived. The doping dependence of the chemical potential across the transition from a Mott-Hubbard insulator to a Fermi-liquid-like metal is very different in these two series of compounds. In agreement with previous studies in the literature the chemical potential shift in La2-xSrxCuO4 is close to zero for small hole concentrations. In YBa2Cu3O6+x, similar to all other doped cuprates studied so far, a strong shift of the chemical potential at low hole doping is detected. However, the results for the inverse charge susceptibility at small x shows a large variation between different doped cuprates. The results are discussed in view of various theoretical models. None of these models turns out to be satisfactory.
Orbital character variation of the Fermi surface and doping dependent changes of the dimensionality in BaFe2-xCoxAs2 from angle-resolved photoemission spectroscopy
Recently, hole-doped superconducting cuprates with the T'-structure La1.8-xEu0.2SrxCuO4 (LESCO) have attracted a lot of attention. We have performed x-ray photoemission and absorption spectroscopy measurements on as-grown and reduced T0-LESCO. Results show that electrons and holes were doped by reduction annealing and Sr substitution, respectively. However, it is shown that the system remains on the electron-doped side of the Mott insulator or that the charge-transfer gap is collapsed in the parent compound.
Both electronic Raman scattering (ERS) and angle-resolved photoemission spectra (ARPES) revealed two energy scales for the gap in different momentum spaces in the cuprates. However, the interpretations were different, and the gap values were also different in two experiments. In order to clarify the origin of these discrepancies, we directly compared ERS and ARPES by calculating ERS from the experimental data of ARPES through the Kubo formula. The calculated ERS spectra were in good agreement with the experimental results except for the B$_{1g}$ peak energies. The doping-dependent B$_{2g}$ pea…
Hidden itinerant-spin phase in heavily-overdoped La2-xSrxCuO4 revealed by dilute Fe doping: A combined neutron scattering and angle-resolved photoemission study
Doping Evolution of Nodal Electron Dynamics in Trilayer Cuprate Superconductor Bi$_2$Sr$_2$Ca$_2$Cu$_3$O$_{10+δ}$ Revealed by Laser-Based Angle-Resolved Photoemission Spectroscopy
Hard X-ray Cu $2p$ Core-Level Photoemission of High-$T_c$ Cuprate Superconductors
用硬X射线光电子能谱（HX-PES）对单层La $_{2-x}$ Sr $_{x}$ CuO $_{4}$、La掺杂Bi $_2$ Sr $_{1.6}$ La $_{0.4}$ CuO $_{6+δ}$（Bi 2201）和双层Bi $_2$ Sr $_{2}$ CaCu $_{2}$ O $_{8+δ}$（Bi 2212）高温超导体中Cu $2p$芯能级谱进行了详细的研究.我们鉴定了Cu $^{2+}$衍生的（i）Zhang-Rice单线态（ZRS）特征，（ii）$d^{n+1}\underline{L}$（配体屏蔽）特征，（iii）$d^{n}$卫星特征，以及主峰中空穴掺杂衍生的高结合能特征。在Bi基铜酸盐中，与La $_{2-x}$ Sr $_{x}$ CuO $_{4}$相比，$d^{n}$卫星特征的强度似乎强烈增强。从X射线光子能量相关的测量，它表明，在卫星区域的强度增加与Bi $4s$核心水平的光谱强度。修正后的$d^{n}$卫星强度与Cu-O层的掺杂含量或层数无关。我们的研究结果表明，相关的ZRS功能和空穴掺杂引起的高结合能谱的主峰与超导电性的变化的相对强度。
Universality of superconducting gaps in overdoped Ba0.3K0.7Fe2As2 observed by angle-resolved photoemission spectroscopy
我们对过掺杂Ba $_{0.3}$ K $_{0.7}$ Fe $_2$ As $_2$超导体（$T_c$ = 22 K）进行了角分辨光电子能谱研究。我们表明，超导（SC）的间隙在每个费米面（FS）是近各向同性的，而间隙值从4.4到7.9毫电子伏不同的FS。通过与欠掺杂和最佳掺杂的Ba $_{1-x}$ K $_x$ Fe $_2$ As $_2$的比较，我们发现在很宽的掺杂范围内（0.25 $\textyen leq$ $x$ $\textyen leq$ 0.7），每个FS上的带隙值与$T_c$几乎成比例。虽然FS体积和SC间隙的大小是强烈的掺杂依赖性，多个无节点的间隙通常可以拟合由一个单一的间隙函数假设配对到第二最近的邻居，表明具有$s_{\yenpm}$波对称性的短程配对状态的普遍性。
In FeSe-derived superconductors, the lack of a systematic and clean control on the carrier concentration prevents the comprehensive understanding on the phase diagram and the interplay between different phases. Here by K dosing and angle resolved photoemission study on thick FeSe films and FeSe$_{0.93}$S$_{0.07}$ bulk crystals, the phase diagram of FeSe as a function of electron doping is established, which is extraordinarily different from other Fe-based superconductors. The correlation strength remarkably increases with increasing doping, while an insulting phase emerges in the heavily overd…
In order to realize superconductivity in cuprates with the T'-type structure, not only chemical substitution (Ce doping) but also post-growth reduction annealing is necessary. In the case of thin films, however, well-designed reduction annealing alone without Ce doping can induce superconductivity in the T'-type cuprates. In order to unveil the origin of superconductivity in the Ce-undoped T'-type cuprates, we have performed bulk-sensitive hard x-ray photoemission and soft x-ray absorption spectroscopies on superconducting and non-superconducting Nd$_{2-x}$Ce$_x$CuO$_4$ ($x=$ 0, 0.15, and 0.19…
Doping evolution of the electronic structure in the single-layer cuprates Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$: Comparison with other single-layer cuprates
我们已经进行了角分辨光电子能谱和芯层X射线光电子能谱研究的单层铜酸盐Bi $_2$ Sr $_{2-x}$ La $_x$ CuO $_{6+δ}$（Bi 2201），并揭示了掺杂的电子结构的演变从轻掺杂到最佳掺杂区域。我们已经观察到的色散准粒子带的形成，费米“弧”的费米面的演变和化学势的移动与空穴掺杂在其他铜酸盐。Bi 2201中的掺杂演变类似于Ca $_{2-x}$ Na $_{x}$ CuO $_{2}$ Cl $_2$（Na-CCOC）中的掺杂演变，其中已经观察到朝向母绝缘体的较低哈伯德带的快速化学势偏移，但是与La $_{2-x}$ Sr $_{x}$ CuO $_{4}$（LSCO）中的掺杂演变完全不同，其中化学势不偏移，而色散带和费米弧/表面已经在轻掺杂区中的费米能级周围形成。利用紧束缚拟合定量分析了费米面形状和能带色散，推导出的次近邻跳跃积分$t'$也证实了与Na-CCOC的相似性和与LSCO的不同.
By partially doping Pb to effectively suppress the superstructure in single-layered cuprate Bi2Sr2CuO6+δ(Pb-Bi2201) and annealing them in vacuum or in high pressure oxygen atmosphere, a series of high quality Pb-Bi2201 single crystals are obtained with Tc covering from 17 K to non-supercondcuting in the overdoped region. High resolution angle resolved photoemission spectroscopy (ARPES) measurements are carried out on these samples to investigate the evolution of the Fermi surface topology with doping in the normal state. Clear and complete Fermi surface are observed and quantitatively analyzed…
Angle-resolved photoemission spectroscopy of Na-doped Ca2CuO2Cl2 single crystals: Fingerprints of a magnetic insulator in a heavily underdoped superconductor
We report an angle-resolved photoemission spectroscopy (ARPES) study of KFe$_2$As$_2$ and CsFe$_2$As$_2$, revealing the existence of a van Hove singularity affecting the electronic properties. As a result of chemical pressure, we find a stronger three-dimensionality in KFe$_2$As$_2$ than in CsFe$_2$As$_2$, notably for the 3$d_{z^2}$ states responsible for the small three-dimensional hole-like Fermi surface pocket reported by quantum oscillations. Supported by first-principles calculations, our ARPES study shows that the van Hove singularity previously reported in KFe$_2$As$_2$ moves closer to …
Dissimilarities between the electronic structure of chemically doped and chemically pressurized iron pnictides from an angle-resolved photoemission spectroscopy study
Using femtosecond time- and angle-resolved photoemission spectroscopy we investigate the effect of electron doping on the electron dynamics in Ba(Fe_{1-x}Co_x)_2As_2 in a range of 0 < x < 0.15 at temperatures slightly above the Néel temperature. By analyzing the time-dependent photoemission intensity of the pump laser excited population as a function of energy, we found that the relaxation times at 0 < E-E_F < 0.2 eV are doping dependent and about 100 fs shorter at optimal doping than for overdoped and parent compounds. Analysis of the relaxation rates also reveals the presence of a pump fluen…
Electronic structure of heavily electron-doped BaFe$_{1.7}$Co$_{0.3}$As$_2$ studied by angle-resolved photoemission
我们对重电子掺杂非超导BaFe $_{1.7}$ Co $_{0.3}$ As $_2$进行了高分辨角分辨光电子能谱研究。我们发现在空穴掺杂的超导体Ba $_{0.6}$ K $_{0.4}$ Fe $_2$ As $_2$中观察到的两个空穴费米面口袋在该化合物中不存在或非常小，而在M点处的两个电子口袋由于Co替代的电子掺杂而显著膨胀。非SC和SC样品的费米面的比较表明，通过反铁磁波矢连接的空穴和电子口袋的共存是实现铁基超导体的超导性机制的必要条件。
Absence of Superconductivity in the "hole-doped" Fe pnictide Ba(Fe$_{1-x}$Mn$_{x}$)$_{2}$As$_{2}$: Photoemission and X-ray Absorption Spectroscopy Studies
本文用光电子能谱和X射线吸收谱研究了Ba（Fe $_{1-x}$ Mn $_{x}$）$_{2}$ As $_{2}$（$x$ =0.08）的电子结构。随着温度的降低，从顺磁相到反铁磁相的转变，清楚地观察到角分辨光电子能谱。XAS结果表明，取代的Mn原子形成了强杂化基态。Mn $L_{3}$边缘的共振光电子能谱表明Mn的3d部分态密度分布在费米能级以下2-13 eV的宽能量范围内（$E_F$），在$E_F$附近贡献很小.这表明，尽管Mn 3d As $4p$杂化很强，但掺杂Mn 3 $d$态仍是局域化的，并由于原位库仑和交换相互作用而分裂成占据和未占据的部分. Ba（Fe $_{1-x}$ Mn $_{x}$）$_{2}$ As $_{2}$中不存在超导电性可以归因于FeAs平面中不存在载流子掺杂，以及Mn杂质对反铁磁有序的强稳定性。
The electronic structure of FeSe thin films grown on SrTiO3 substrate is studied by angle-resolved photoemission spectroscopy (ARPES). We reveal the existence of Dirac cone band dispersions in FeSe thin films thicker than 1 Unit Cell below the nematic transition temperature, whose apex are located -10 meV below Fermi energy. The evolution of Dirac cone electronic structure for FeSe thin films as function of temperature, thickness and cobalt doping is systematically studied. The Dirac cones are found to be coexisted with the nematicity in FeSe, disappear when nematicity is suppressed. Our resul…
High temperature superconductivity in cuprates arises from doping a parent Mott insulator by electrons or holes. A central issue is how the Mott gap evolves and the low-energy states emerge with doping. Here we report angle-resolved photoemission spectroscopy measurements on a cuprate parent compound by sequential in situ electron doping. The chemical potential jumps to the bottom of the upper Hubbard band upon a slight electron doping, making it possible to directly visualize the charge transfer band and the full Mott gap region. With increasing doping, the Mott gap rapidly collapses due to t…
Using angle-resolved photoemission spectroscopy (ARPES), we studied the evolution of the electronic structure of Fe1-xCuxSe from x = 0 to 0.10. We found that the Cu dopant introduces extra electron carriers. The hole bands near the gamma point are observed to steadily shift downward with increasing doping and completely sink down below the Fermi level (EF) for x > 0.05. Meanwhile, the electron pocket near the M point becomes larger but loses the spectral weight near EF. We also observed that effective mass of the electron band near the M point increases with doping. Our result explains why sup…
