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arXiv 0905.3815cond-mat.mes-hallcond-mat.dis-nncond-mat.mtrl-sci
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无序半导体碳纳米管中电子和声子输运的比较

Comparison of electron and phonon transport in disordered semiconductor carbon nanotubes

H. Sevincli, T. Lehmann, D. A. Ryndyk, G. Cuniberti

摘要:

碳纳米材料作为未来电子学的候选材料,其电荷和热导率是最重要的参数。本文采用原子论格林函数方法研究了长半导体碳纳米管(CNTs)中Anderson型无序对电子电荷电导率和晶格热导率的影响。电子和声子传输分析作为无序纳米结构的长度的函数。计算了不同长度下的热导率随温度的变化。作为长度的无序设备的函数的传输概率的分析表明,具有不同能量的电子和声子显示不同的传输制度,即准弹道,扩散和本地化制度共存。根据这些结果,我们讨论了半导体器件在电子应用中的发热问题。

英文摘要:

Charge and thermal conductivities are the most important parameters of carbon nanomaterials as candidates for future electronics. In this paper we address the effects of Anderson type disorder in long semiconductor carbon nanotubes (CNTs) to electron charge conductivity and lattice thermal conductivity using the atomistic Green function approach. The electron and phonon transmissions are analyzed as a function of the length of the disordered nanostructures. The thermal conductance as a function of temperature is calculated for different lengths. Analysis of the transmission probabilities as a function of length of the disordered device shows that both electrons and phonons with different energies display different transport regimes, i.e. quasi-ballistic, diffusive and localization regimes coexist. In the light of the results we discuss heating of the semiconductor device in electronic applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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