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arXiv 0905.2114cond-mat.mtrl-sci
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双空位缺陷石墨烯中的分子吸附

Molecular adsorption in graphene with divacancy defects

Biplab Sanyal, Olle Eriksson, Ulf Jansson, Helena Grennberg

摘要:

我们从理论上研究了分子在具有双空位缺陷的石墨烯上的吸附。利用从头算密度泛函计算,我们发现O2,CO,N2,B2和H2O分子都与石墨烯层中的双空位强烈相互作用。随着分子-石墨烯键合的复杂几何形状,已经发现在CO和N2分子存在下石墨烯层的金属行为,在费米能级附近具有大的态密度,表明电导率增加。N2的吸附特别有趣,因为N原子在缺陷附近解离,并占据双空位中缺失的C原子曾经所在的位置。以这种方式,缺陷的石墨烯结构在几何上被修复,并且同时掺杂有电子状态。

英文摘要:

We have investigated theoretically the adsorption of molecules onto graphene with divacancy defects. Using ab-initio density functional calculations, we have found that O2, CO, N2, B2 and H2O molecules all interact strongly with a divacancy in a graphene layer. Along with a complex geometry of the molecule-graphene bonding, metallic behavior of the graphene layer in presence of CO and N2 molecules have been found with a large density of states in the vicinity of the Fermi level suggesting an increase in the conductivity. The adsorption of N2 is particularly interesting since the N atoms dissociate in the vicinity of the defects, and take the place where the missing C atoms of the divacancy used to sit. In this way, the defected graphene structure is healed geometrically, and at the same time doped with electron states.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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