电场作为氮掺杂石墨烯吸放氢开关的研究
The electric field as a novel switch for uptake/release of hydrogen storage in nitrogen doped graphene
摘要：
氮掺杂石墨烯最近被合成，并且据报道是在垂直施加的电场（F）下用于氢解离吸附的催化剂。本文利用密度泛函理论研究了在垂直电场存在和不存在的情况下，H原子在N掺杂石墨烯上的扩散.我们证明，外加电场可以显着促进氮掺杂石墨烯上的氢分子的结合，通过解离吸附和表面上的扩散。通过去除外加场，可以有效地释放被吸收的H原子。我们的理论计算表明，N掺杂石墨烯是一种很有前途的储氢材料，具有可逆的氢吸附/脱附，其中施加的电场可以作为摄取/释放过程的开关。
英文摘要：
Nitrogen-doped graphene was recently synthesized and was reported to be a catalyst for hydrogen dissociative adsorption under a perpendicular applied electric field (F). In this work, the diffusion of H atoms on N-doped graphene, in the presence and absence of an applied perpendicular electric field, is studied using density functional theory. We demonstrate that the applied field can significantly facilitate the binding of hydrogen molecules on N-doped graphene through dissociative adsorption and diffusion on the surface. By removing the applied field the absorbed H atoms can be released efficiently. Our theoretical calculation indicates that N-doped graphene is a promising hydrogen storage material with reversible hydrogen adsorption/desorption where the applied electric field can act as a switch for the uptake/release processes.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
