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arXiv 0710.2878cond-mat.mtrl-scicond-mat.other
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石墨烯背面的氢吸附

Hydrogen Adsorption of Back Side of Graphene

Atsushi Ito, Arimichi Takayama, Hiroaki Nakamura

摘要:

采用经典的分子动力学模拟和改进的Brenner REBO势研究了单个氢原子与单个石墨烯的相互作用。观察到三种相互作用,即吸附、反射和穿透。悬垂结构出现并在石墨烯的背面上产生吸附位点。据认为,背侧吸附发生在两个条件下,即入射的氢原子应具有大于石墨烯的六边形孔的势垒的入射能量,以及在氢原子穿过石墨烯之后,其不保持其动能被吸附位点捕获。该条件解释了随着入射能量的增加,背侧吸附的入射点在模拟中移动到石墨烯的六边形孔的外围。此外,当石墨烯的六边形孔通过氢原子入射到六边形孔的外围而扩展时,其势垒降低。

英文摘要:

We studied the interaction between a single hydrogen atom and a single graphene using classical molecular dynamics simulation with modified Brenner REBO potential. Three interactions, which are adsorption, reflection, penetration, were observed. Overhang structure appears and creates an adsorption site on the backside of the graphene. It is considered that backside adsorption occurs under the two conditions that an incident hydrogen atom should have incident energy which is larger than the potential barrier of a hexagonal hole of the graphene and that after the hydrogen atom passes through the graphene, it does not keep its kinetic energy to be trapped by the adsorption site. The conditions explained that as the incident energy increased, the incident point of the backside adsorption shifted to the periphery of a hexagonal hole of the graphene in the simulation. Moreover, when a hexagonal hole of the graphene was expanded by the hydrogen atom incidence to the periphery of the hexagonal hole, its potential barrier was reduced.

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