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arXiv 1702.00809cond-mat.mtrl-sci
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氢在非极性GaN(1-100)表面的吸附和脱附:动力学和对表面振动和电子性质的影响

Adsorption and desorption of hydrogen at nonpolar GaN(1-100) surfaces: Kinetics and impact on surface vibrational and electronic properties

L. Lymperakis, J. Neugebauer, M. Himmerlich, S. Krischok, M. Rink, J. Kröger, V. M. Polyakov

摘要:

利用表面电子能谱结合密度泛函理论(DFT)计算研究了氢在非极性GAN(1-100)表面的吸附及其对电子和振动性质的影响.对于表面介导的H2解离和随后的H吸附,必须克服0.55 eV的能垒。计算的动力学表面相图表明,该反应在低压和低温下受到动力学阻碍。在较高的温度从头算热力学表明,H-自由表面是积极的青睐。为了验证这些理论预测实验在室温下,并在高真空条件下进行。结果表明,分子氢在GAN(1-100)表面上没有解离吸附.只有活化的原子氢原子附着在表面上。在820 K以上的温度下,附着的氢被解吸。吸附的氢原子饱和镓和氮表面原子的悬挂键,并导致Ga-N表面二聚体屈曲的反转。在H覆盖的表面上的Ga-H和N-H振动模式的签名已被实验确定,并与表面声子模式的DFT计算符合得很好。理论和实验都表明,H的吸附导致清洁GAN(1-100)表面的占据和未占据的带隙内电子态的去除,并使表面向上的能带弯曲减小0.4eV。后一种机制大大减少了表面电子耗尽。

英文摘要:

The adsorption of hydrogen at nonpolar GaN(1-100) surfaces and its impact on the electronic and vibrational properties is investigated using surface electron spectroscopy in combination with density functional theory (DFT) calculations. For the surface mediated dissociation of H2 and the subsequent adsorption of H, an energy barrier of 0.55 eV has to be overcome. The calculated kinetic surface phase diagram indicates that the reaction is kinetically hindered at low pressures and low temperatures. At higher temperatures ab-initio thermodynamics show, that the H-free surface is energetically favored. To validate these theoretical predictions experiments at room temperature and under ultrahigh vacuum conditions were performed. They reveal that molecular hydrogen does not dissociatively adsorb at the GaN(1-100) surface. Only activated atomic hydrogen atoms attach to the surface. At temperatures above 820 K, the attached hydrogen gets desorbed. The adsorbed hydrogen atoms saturate the dangling bonds of the gallium and nitrogen surface atoms and result in an inversion of the Ga-N surface dimer buckling. The signatures of the Ga-H and N-H vibrational modes on the H-covered surface have experimentally been identified and are in good agreement with the DFT calculations of the surface phonon modes. Both theory and experiment show that H adsorption results in a removal of occupied and unoccupied intragap electron states of the clean GaN(1-100) surface and a reduction of the surface upward band bending by 0.4 eV. The latter mechanism largely reduces surface electron depletion.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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