We report on photoluminescence (PL) measurements at 85 K for GaN/AlGaN surface quantum wells (SQW's) with a width in the range of 1.51-2.9 nm. The PL spectra show a redshift with decreasing SQW width, in contrast to the blueshift normally observed for conventional GaN QW's of the same width. The effect is attributed to a strong coupling of SQW confined exciton states with surface acceptors. The PL hence originates from the recombination of surface-acceptor-bound excitons. Two types of acceptors were identified.
The polarized Raman spectroscopy is capable of giving confirmation regarding the crystalline phase as well as the crystallographic orientation of the sample. In this context, apart from crystallographic x-ray and electron diffraction tools, polarized Raman spectroscopy and corresponding spectral imaging can be a promising crystallographic tool for determining both crystalline phase and orientation. Sub-micron sized hexagonal AlGaN crystallites are grown by a simple atmospheric pressure chemical vapor deposition technique using the self catalytic vapor-solid process under N-rich condition. The …
A simple method for detection and quantitative estimation of deep levels in a barrier layer of AlGaN/GaN HEMT structures by analysis of light induced threshold voltage shift
Trap Dynamics and Conductivity Changes in AlGaN/GaN Heterostructures Under Ultrasonic Loading
V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of sciences of Ukraine（乌克兰国家科学院 V.E. 拉什卡廖夫半导体物理研究所）；Taras Shevchenko National University（塔拉斯·舍甫琴科国立大学）
Till now the nanoscale focussing and imaging in the sub-diffraction limit is achieved mainly with the help of plasmonic field enhancement assisted with noble metal nanoparticles. Using far field imaging technique, we have recorded polarized spectroscopic photoluminescence (PL) imaging of a single AlGaN nanowire (NW) of diameter ~ 100 nm using confinement of polarized light. The nanowires on the substrate have a nematic ordering. It is found that the PL from a single NW is influenced by the proximity to other NWs with the PL intensity scaling as 1/(lxd), where l and d are the NW length and the …
In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can also have a phonon drag component, due to momentum exchange between charge carriers and lattice phonons, which is more difficult to quantify. Here, we present the first study of phonon drag in the AlGaN/GaN two-dimensional electron gas (2DEG). We find that phonon drag does not contribute significantly to the thermoelectric behavior of devices with ~100 nm GaN thickness, which suppress the phonon mean free path. Howev…
Using high magnetic fields up to 60 T, we report magneto-transport and photoluminescence (PL) studies of a two-dimensional electron gas (2DEG) in a GaN/AlGaN heterojunction grown by molecular-beam epitaxy. Transport measurements demonstrate that the quantum limit can be exceeded (Landau level filling factor $ν< 1$), and show evidence for the $ν=2/3$ fractional quantum Hall state. Simultaneous optical and transport measurements reveal synchronous quantum oscillations of both the PL intensity and longitudinal resistivity in the integer quantum Hall regime. PL spectra directly reveal the dispersi…
Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an inherently existing, highly-mobile 2-dimensional electron gas (2DEG), which results in normally-on transistor characteristics. Here we report on an ultra-pure GaN/AlGaN layer stack grown by molecular beam epitaxy, in which such a 2DEG is absent at 300 K in the dark, a property previously not demonstrated. Illumination with ultra-violet light however, generates a 2DE…
O2-plamsa-based digital etching of Al0.25Ga0.75N with a 0.8 nm AlN spacer on GaN was investigated. At 40 W RF bias power and 40 sccm oxygen flow, the etch depth of Al0.25Ga0.75N was 5.7 nm per cycle. The 0.8 nm AlN spacer layer acted as an etch-stop layer in 3 cycles. The surface roughness improved to 0.33 nm after 7 digital etch cycles. Compared to the dry etch only approach, this technique causes less damages. It was shown to be effective in precisely controlling the AlGaN etch depth required for recessed-AlGaN HEMTs.
In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the surface damage problem caused during the deposition of the high-stress SiNx, and provided a good passivated interface. The HEMTs with dual-layer stressors showed a 1 V increase in the threshold voltage (Vth) with comparable on-current and RF current gain to those without stressors. Moreover, the off-current (I_off) was shown to be reduced by one to three orders of magnitude in the strained devices as a result of the low…
Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlGaN/AlN/GaN heterostructures
研究了两种不同Al组分（x=0.15和x=0.25）的AlGaN/AlN/GAN异质结的持续光电导（PPC）效应。利用Shubnikov-de Haas和Hall测量方法研究了AlN/GAN异质界面处形成的二维电子气。利用光学照射，我们能够将Al 0.15 Ga 0.85 N/AlN/GAN样品的载流子密度从1.6 × 10 ^{12} cm^{-2}增加到5.9 × 10 ^{12} cm^{-2}，同时在T = 1.6 K时电子迁移率从9540 cm 2/Vs增加到21400 cm 2/Vs。在这两个样品中的持续光电流表现出强烈的依赖于照明波长，是最高的接近带隙和降低在较长的波长。PPC效应对于长于530 nm的照明波长变得相当弱，并且在光谱的红外区域（>700 nm）中显示出具有初始负光电导的更复杂的响应。Al0.25Ga0.75N/AlN/GAN和Al0.15Ga0.85N/AlN/GAN样品在390 nm照射下的最大PPC效率分别为0.011%和0.005%。在光照后，可以通过退火样品来降低载流子密度。在20-280 K温度范围内研究了PPC效应的退火特性。我们发现，在280 K退火是不足以完全恢复的载流子密度。事实上，即使在室温下，PPC效应也发生在这些样品中。比较两种样品的测量结果，Al0.25Ga0.75N/AlN/GAN样品具有较大的光照响应，并显示出较小的恢复与…
Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: influence on indirect exciton diffusion
本文在块体 GaN 衬底上通过分子束外延生长 GaN/AlxGa1-xN 量子阱，通过优化生长温度等条件最小化光致发光峰展宽，利用微光致发光装置测量间接激子扩散，提取扩散常数并确定了研究间接激子液体量子集体效应的最佳生长条件。
Tuning thermal transport in semiconductor nanostructures is of great significance for thermal management in information and power electronics. With excellent transport properties, such as ballistic transport, immunity to point defects and disorders, and forbidden backscattering, topological phonon surface states show remarkable potential in addressing this issue. Herein, topological phonon analyses are performed on hexagonal wurtzite GaN to check the topological characteristics of phonons. And other nitrides of the same family, i.e., AlN and AlGaN alloy, are also calculated from a topological …
Weak antilocalization and zero-field electron spin splitting in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas
We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride material. The detector exhibits a peak photocurrent at 5.7 THz (23.6 meV) with a responsivity of 0.1 mA/W at 10 K under surface normal irradiation through a 10 um period grating. The photocurrent pers…
We present a study of undoped AlGaN/GaN separate confinement heterostructures designed to operate as electron beam pumped ultraviolet lasers. We discuss the effect of spontaneous and piezoelectric polarization on carrier diffusion, comparing the results of cathodoluminescence with electronic simulations of the band structure and Monte Carlo calculations of the electron trajectories. Carrier collection is significantly improved using an asymmetric graded-index separate confinement heterostructure (GRINSCH). The graded layers avoid potential barriers induced by polarization differences in the he…
GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from exploiting the material advantages of GaN at present, limiting the desire to use GaN for ultra-high voltage (UHV) applications. Then, a golden question is whether the excellent properties of GaN-based materials can be practically used in the UHV field? Here we demonstrate UHV AlGaN/GaN SBDs on sapphire with a BV of 10.6 kV, a specific on-resistance of 25.8 m…
Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive, two-dimensional electron gas (2DEG) at the AlGaN/GaN interface is based on built-in polarization fields (not doping) and is confined to very small thicknesses, its charge carriers exhibit much higher mobilities in comparison to their doped counterparts. In this study, we show that this heterostructured material also offers the unique ability to manipulate electrical tra…
We report a two-step process to obtain smooth and vertical {10-10} m-plane facets in AlGaN/GaN separate confinement heterostructures designed to fabricate UV lasers emitting at 355 nm. The process consists in a dry etching by RIE-ICP combined with a crystallographic-selective wet etching process using a KOH-based solution. The anisotropy in the wet etching rates between the different crystallographic planes of the AlGaN structure, allows the fabrication of flat and parallel facets without a degradation of the multilayered ensemble. The optical performance of the lasers display a major improved…
We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON AlGaN/GaN MISHEMTs for GaN device platforms on Si. A conduction band offset of 1.9 eV is extracted for HfO2/GaN along with a very low density of fixed bulk and interfacial charges. Conductance measurements on HfO2/GaN MOSCAPs reveal an interface trap state continuum with a density of 9.37x1012 eV-1cm-2 centered at 0.48 eV below EC. The forward and reverse current densities are shown to be governed by Fowler-Nordheim tu…
Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufacturing approaches, and paves the way for soft, conformal, and flexible electronics. Using a two-dimensional (2D) boron nitride (BN) release layer, we demonstrate the transfer of AlGaN/GaN high-electron mobility transistors (HEMTs) to arbitrary substrates through both direct van der Waals (vdW) bonding and with a polymer adhesive interlayer. No device degradation was observed due to the transfer process, and a signifi…
In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a double barrier anode (DBA) structure formed by the mixture of Platinum (Pt) and Tantalum (Ta), the Von of the SBD can be as low as 0.36 V with a leakage current of 2.5E-6 A/mm. Supported by the high-quality carbon-doped GaN buffer on sapphire, the VBK can reach more than 10 kV with the anode-to-cathode spacing of 85 μm. Combining the VBK and the specific on-resistance (Ron,sp) of 25.1 mΩ.cm^2, the power figure of merit…
Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic…
Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. Secondary ion mass spectroscopy, positron annihilation spectroscopy, steady state and time-resolved photoluminescence (PL) measurements have been performed in conjunction with electrical characterization and current transient analyses. The correlation between yellow luminescence (YL), C- and Ga vacancy concentration is investigated. Time-resolved PL indicating the C$_{\mathrm{N}}$O$_{\mathrm{N}}$ complex as the main s…
Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture
研究 HSQ 包封平坦化的 GaN 与 AlGaN/AlN 纳米线紫外光电探测器，揭示其钝化、应变和偏压可调光谱响应机制，并验证器件保持单纳米线级选择性且无持续光电流。
The decoupling of epitaxial factors influencing on the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors is investigated. Three different sets of samples have been analyzed by means of dynamic instabilities in the threshold voltage (V$_{\mathrm{th}}$ shift). Secondary ion mass spectroscopy, steady-state photoluminescence (PL) measurements have been performed in conjunction with electrical characterization. The device dynamic performance is found to be significantly dependent on both the C concentration close to the channel as well as on the dis…
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford backscattering spectrometry, and the Ge concentration was increased up to [Ge] = 1E21 cm-3. Even at these high doping levels Ge does not induce any structural degradation in AlxGa1-xN layers with x below 0.15. However, for higher Al compositions, clustering of Ge forming crystallites were observed. Hall effect measurements show a gradual decrease of the carrier …
In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality with a 0.26-nm roughness of the anode recessed surface. By using the high work function metal Pt as the Schottky electrode, a low Von of 0.71 V is obtained with a high uniformity of 0.023 V for 40 devices. Supported by the flat anode recess surface and related field plate design, the SBD device with the anode-cathode spacing of 15 um show the Ron,sp of 1.53 mOhm.cm2 only, t…
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a picture of the thermal quenching processes and activation energy levels. By comparing the photoluminescence from Er ions in the epilayer with a reference sample of Er-doped SiO2, we find that the fractio…
This paper assesses the effects of Ge-doping on the structural and optical (band-to-band and intersubband (ISB)) properties of GaN/AlGaN multi-quantum wells (QWs) designed to display ISB absorption in the short-wave, mid- and far-infrared ranges (SWIR, MIR, and FIR, respectively). The standard c-plane crystallographic orientation is considered for wells absorbing in the SWIR and MIR spectral regions, whereas the FIR structures are grown along the nonpolar m-axis. In all cases, we compare the characteristics of Ge-doped and Si-doped samples with the same design and various doping levels. The us…
In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related breakdown. This method is an effective method to determine the breakdown mechanisms. The different BD mechanisms were further confirmed by scanning electron microscopy (SEM). Finally, the temperature dependences of the three BD mechanisms were meas…
Magnetic field dependent polarization selective photoluminescence(PL) study has been carried out at 1.5~K on Gd-doped GaN epitaxial layers grown on c-SiC substrates by molecular beam epitaxy technique. It has been found that the incorporation of Gd in GaN leads to the generation of three types of donor like defects that result in neutral donor bound excitonic features in low temperature PL. The study reveals that the rate of spin-flip scattering for all the three excitonic features becomes almost $B$-independent suggesting that these signals must be stemming from defects which are ferromagneti…
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations under stress has been ascribed to charge trapping occurring at the different interfaces in the metal/p-GaN/AlGaN/GaN system. In particular, depending on the stress bias level, electrons (VG < 6 V) or holes (VG > 6 V) are trapped, causing a positive or negative threshold voltage shift {DVTH, respectively. By monitoring the gate current variations at different…
