AlGaN/GaN异质结构的多层Pt/Al基欧姆接触在600 oC环境空气中稳定
Multilayer Pt/Al Based Ohmic contacts for AlGaN/GaN Heterostructures Stable up to 600oC Ambient Air
摘要：
本文提出了一种基于Pt/Al多层堆叠的AlGaN/GAN异质结欧姆接触金属化技术。制造CTLM结构以评估所提出的金属化的电性能。在600 ℃的空气中连续老化100小时以上后，所制造的电池堆显示出优异的稳定性。所制备的样品在老化后的测量I-V特性显示出良好的线性。Pt/Al基金属化在极端环境条件下的未来器件和传感器应用中显示出巨大的潜力。
英文摘要：
In this paper, we present a Pt/Al multilayer stack-based ohmic contact metallization for AlGaN/GaN heterostructures. CTLM structures were fabricated to assess the electrical properties of the proposed metallization. The fabricated stack shows excellent stability after more than 100 hours of continuous aging at 600oC in air. Measured I-V characteristics of the fabricated samples show excellent linearity after the aging. The Pt/Al-based metallization shows great potential for future device and sensor applications in extreme environment conditions.
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