超声加载下AlGaN/GaN异质结构中的陷阱动力学与电导率变化
Trap Dynamics and Conductivity Changes in AlGaN/GaN Heterostructures Under Ultrasonic Loading
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中文总结 AI 辅助
该研究探究超声加载对AlGaN/GaN异质结构陷阱动力学与电导率的影响，发现其可通过驱动DX中心重排调制缺陷态，为提升GaN基器件可靠性提供新途径。
中文摘要 AI 辅助
AlGaN/GaN异质结构对高功率电子器件至关重要，但缺陷处的电子俘获会限制其可靠性。我们结合变温霍尔效应与高分辨率X射线衍射测量，研究超声振动对MOCVD法制备的AlGaN/GaN异质结构中电子输运的影响。研究表明，超声加载会引发持续声电导效应与晶格参数变化，这归因于声学驱动的亚稳态DX中心重排，该过程使载流子浓度升高、迁移率降低，反映出声学应变对缺陷态的调制作用。这些发现为动态形变下的陷阱动力学提供了新见解，并表明超声处理是缓解俘获效应、提升GaN基器件性能与可靠性的潜在方法。
英文摘要
AlGaN/GaN heterostructures are critical for high-power electronic devices but suffer from electron trapping at defects, limiting reliability. We investigate how ultrasonic vibrations affect electron transport in MOCVD-grown AlGaN/GaN heterostructures by combining temperature-dependent Hall effect and high-resolution X-ray diffraction measurements. Here we demonstrate that ultrasonic loading induces persistent acoustoconductivity and lattice parameter changes, attributed to acoustically driven rearrangement of metastable DX centers. This leads to increased carrier concentration and decreased mobility, reflecting defect state modulation by acoustic strain. These findings provide new insights into trap dynamics under dynamic deformation and suggest ultrasonic treatment as a potential approach to mitigate trapping effects, thereby enhancing the performance and reliability of GaN-based devices.
发表机构
- V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of sciences of Ukraine（乌克兰国家科学院 V.E. 拉什卡廖夫半导体物理研究所）
- Taras Shevchenko National University（塔拉斯·舍甫琴科国立大学）
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