At low energy, electrons in doped graphene sheets behave like massless Dirac fermions with a Fermi velocity which does not depend on carrier density. Here we show that modulating a two-dimensional electron gas with a long-wavelength periodic potential with honeycomb symmetry can lead to the creation of isolated massless Dirac points with tunable Fermi velocity. We provide detailed theoretical estimates to realize such artificial graphene-like system and discuss an experimental realization in a modulation-doped GaAs quantum well. Ultra high-mobility electrons with linearly-dispersing bands might open new venues for the studies of Dirac-fermion physics in semiconductors.
Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidences …
Chemical functionalization is a promising route to band gap engineering of graphene. We chemically grafted nitrophenyl groups onto exfoliated single-layer graphene sheets in the form of substrate-supported or free-standing films. Our transport measurements demonstrate that non-suspended functionalized graphene behaves as a granular metal, with variable range hopping transport and a mobility gap ~ 0.1 eV at low temperature. For suspended graphene that allows functionalization on both surfaces, we demonstrate tuning of its electronic properties from a granular metal to a gapped semiconductor, in…
A so-called artificial graphene is an artificial material whose low-energy carriers are described by the massless Dirac equation. Applying a periodic potential with triangular symmetry to a two-dimensional electron gas is one way to make such a material. According to recent experimental results, it is now possible to realize an artificial graphene in the lab and to even apply an additional lateral, one-dimensional periodic potential to it. We name the latter system an artificial graphene superlattice in order to distinguish it from a genuine graphene superlattice made from graphene. In this st…
Despite many studies on how geometry can be used to control the electronic properties of graphene, certain limitations to fabrication of designed graphene nanostructures exist. Here, we demonstrate controlled topographical replication of graphene by artificial deoxyribonucleic acid (DNA) nanostructures. Owing to the high degree of geometrical freedom of DNA nanostructures, we controlled the nanoscale topography of graphene. The topography of graphene replicated from DNA nanostructures showed enhanced thermal stability and revealed an interesting negative temperature coefficient of sheet resist…
Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical transport characteristics of graphene channel. We explore myriads of typical side gated devices such as symmetric dual side gates and asymmetric single side gate biasing, in monolayer and bilayer graphene. The side gates modulate the electrostatic doping in the graphene channel whose effect is reflected in transport measurement. This modulation efficiency is systematically characterized for all our devices and agrees …
Graphene is only one atom thick and becomes the ultimate thin film to explore membrane physics and mechanics. Here we study hierarchy of graphene wrinkles induced by thermal strain engineering and demonstrate that the wrinkling hierarchy can be accounted for by the wrinklon theory. We derive an equation λ = (ky)0.5 explaining evolution of wrinkling wavelength λ with the distance to the edge y observed in our experiment by considering both bending energy and stretching energy of the graphene flakes. The prefactor k in the equation is determined to be about 55 nm, which is independent of the siz…
An odd number of zigzag edges in armchair graphene nanoribbons and their mechanical properties (e.g., Young's modulus, Poisson ratio and shear modulus) have potential interest for bandgap engineering in graphene based optoelectronic devices. In this paper, we consider armchair graphene nanoribbons passivated with hydrogen at the armchair edges and then apply the strain for tuning the bandgaps. Using density functional theory calculations, our study finds that the precise control of strain can allow tuning the bandgap from semiconductor to mettalic and then again switching back to semiconductor…
Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-called conduction gap. Since strain accumulates in constrictions, graphene nanoconstrictions can be a good platform for this technology. On the other hand, in the graphene nanoconstrictions, Fabry-Perot type quantum interference dominates the electrical conduction at low bias voltages. We argue that these two effects have different strain dependence; the pseudo-gauge field contribution is symmetric with respect to posi…
We theoretically study the transmittance for normal incidence of linearly polarized light between two media separated by a strained graphene monolayer. We analytically characterize the degree of dichroism and the transparency of graphene as a function of an arbitrary uniform strain and the incident polarization. We discuss how measurements of dichroism and transparency for two different polarization directions can be used to determine the magnitude and direction of strain. Ours findings result in very useful tools to tune the graphene absorption by mechanical strain, as well as to design nano-…
We propose a new class of semiconducting graphene-based nanostructures: hydrogenated graphene nanoripples (HGNRs), based on continuum-mechanics analysis and first principles calculations. They are formed via a two-step combinatorial approach: first by strain engineered pattern formation of graphene nanoripples, followed by a curvature-directed self-assembly of H adsorption. It offers a high level of control of the structure and morphology of the HGNRs, and hence their band gaps which share common features with graphene nanoribbons. A cycle of H adsorption/desorption at/from the same surface lo…
Here, we present a micro-electromechanical system (MEMS) for the investigation of the electromechanical coupling in graphene and potentially related 2D materials. Key innovations of our technique include: (1) the integration of graphene into silicon-MEMS technology; (2) full control over induced strain fields and doping levels within the graphene membrane and their characterization via spatially resolved confocal Raman spectroscopy; and (3) the ability to detect the mechanical coupling of the graphene sheet to the MEMS device with via their mechanical resonator eigenfrequencies.
We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-induced band-gap or band-overlap in the different layers.
Metal-intercalated graphene on Ir(111) exhibits phonon signatures in inelastic elec- tron tunneling spectroscopy with strengths that depend on the intercalant. Extraor- dinarily strong graphene phonon signals are observed for Cs intercalation. Li interca- lation likewise induces clearly discriminable phonon signatures, albeit less pronounced than observed for Cs. The signal can be finely tuned by the alkali metal coverage and gradually disappears upon increasing the junction conductance from tunneling to con- tact ranges. In contrast to Cs and Li, for Ni-intercalated graphene the phonon signal…
We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurements show larger energy gaps opening for narrower ribbons. The sizes of these energy gaps are investigated by measuring the conductance in the non-linear response regime at low temperatures. We find that…
Using classical molecular dynamics simulation, we have studied the effect of edge-passivation by hydrogen (H-passivation) and isotope mixture (with random or supperlattice distributions) on the thermal conductivity of rectangular graphene nanoribbons (GNRs) (of several nanometers in size). We found that the thermal conductivity is considerably reduced by the edge H-passivation. We also find that the isotope mixing can reduce the thermal conductivities, with the supperlattice distribution giving rise to more reduction than the random distribution. These results can be useful in nanoscale engine…
We explore the use of applied electrical potentials to induce band flattening in graphene for bands near zero energy. We consider various families of doubly periodic potentials and simulate their effect on the electronic band structure using a tight-binding and a continuum approach. From these families, we find that an applied potential with symmetries of wallpaper group 17, in particular a Kagome potential, works best for inducing a high degree of band flattening for a range of realistic potential amplitudes and periods. Our work indicates that it should be possible to engineer the band struc…
Chen, Apalkov, and Chakraborty (Phys. Rev. Lett. 98, 186803 (2007)) have computed Fock-Darwin levels of a graphene dot by including only basis states with energies larger than or equal to zero. We show that their results violate the Hellman-Feynman theorem. A correct treatment must include both positive and negative energy basis states. Additional basis states lead to new energy levels in the optical spectrum and anticrossings between optical transition lines.
Edge states are one important ingredient to understand transport properties of graphene nanoribbons. We study experimentally the existence and the internal structure of edge states under uniaxial strain of the three main edges: zigzag, bearded, and armchair. The experiments are performed on artificial microwave graphene flakes, where the wavefunctions are obtained by direct imaging. We show that uniaxial strain can be used to manipulate the edge states: a single parameter controls their existence and their spatial extension into the ribbon. By combining tight-binding approach and topological a…
Theory predicts that graphene under uniaxial compressive strain in an armchair direction should undergo a topological phase transition from a semimetal into an insulator. Due to the change of the hopping integrals under compression, both Dirac points shift away from the corners of the Brillouin zone towards each other. For sufficiently large strain, the Dirac points merge and an energy gap appears. However, such a topological phase transition has not yet been observed in normal graphene (due to its large stiffness) neither in any other electronic system. We show numerically and analytically th…
The effect of Rashba spin-orbit interaction and anisotropic strain on the electronic, optical and thermodynamic properties of artificial graphene-like superlattice composed of InAs-GaAs quantum dots has been considered theoretically. The electronic energy dispersions have been obtained using Green's function formalism in combination with Fourier transformation to the reciprocal space and an exact diagonalization technique. We have observed a splitting of Dirac points and appearance of edditional Dirac-like points due to the Rashba spin-orbit interaction. Breaking of the hexagonal symmetry of t…
Strain fold-like deformations on armchair graphene nanoribbons (AGNRs) can be properly engineered in experimental setups, and could lead to a new controlling tool for gaps and transport properties. Here, we analyze the electronic properties of folded AGNRs relating the electronic responses and the mechanical deformation. An important and universal parameter for the gap engineering is the ribbon percent width variation, i.e., the difference between the deformed and undeformed ribbon widths. AGNRs bandgap can be tuned mechanically in a well defined bounded range of energy values, eventually lead…
By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these hetero-channels. It is shown that a finite conduction-gap can open in the strain junctions due to the strain-induced deformation of graphene bandstructure. These hetero-channels are then demonstrated to improve significantly the operation of graphene field-effect-transistors (FETs). In particular, ON/OFF current ratio can reach a value of over 10$^5$. In gra…
We present a new first-order approach to strain-engineering of graphene's electronic structure where no continuous displacement field $\mathbf{u}(x,y)$ is required. The approach is valid for negligible curvature. The theory is directly expressed in terms of atomic displacements under mechanical load, such that one can determine if mechanical strain is varying smoothly at each unit cell, and the extent to which sublattice symmetry holds. Since strain deforms lattice vectors at each unit cell, orthogonality between lattice and reciprocal lattice vectors leads to renormalization of the reciprocal…
In graphene nanoribbon junctions, the nearly perfect transmission occurs in some junctions while the zero conductance dips due to anti-resonance appear in others. We have classified the appearance of zero conductance dips for all combinations of ribbon and junction edge structures. These transport properties do not attribute to the whole junction structure but the partial corner edge structure, which indicates that one can control the electric current simply by cutting a part of nanoribbon edge. The ribbon width is expected to be narrower than 10 nm in order to observe the zero conductance dip…
Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic force microscopy measurements performed in a HybriD mode complemented by scanning electron microscopy allow for a detailed visualization of the strain distribution on graphene surface. Graphene in direct contact with supporting regions is tensile strained, while graphene located in-between is characterized by lower strain. Characteristic tensile strained wri…
We propose a first principles effective medium formalism to study the propagation of electron waves in semiconductor heterostructures with a zero-band gap. Our theory confirms that near the K-point the dynamics of a two-dimensional electron gas modulated by an external electrostatic potential with honeycomb symmetry is described by the same pseudospinor formalism and Dirac massless equation as a graphene monolayer. Furthermore, we highlight that even though other superlattices based on semiconductors with a zincblende-type structure can have a zero band-gap and a linear energy-momentum dispers…
We numerically investigate the impact of boron nitride (BN) domains on the transport properties of graphene nanoribbons with lengths ranging from a few to several hundreds of nanometers and lateral size up to 4 nm. By varying the size and morphology of the BN islands embedded in the graphene matrix, a wide transport tunability is obtained from perfect insulating interfaces to asymmetric electron-hole transmission profiles, providing the possibility to engineer mobility gaps to improve device performances. Even in the low-density limit of embedded BN islands, transport properties are found to b…
Strain engineering has been recently recognized as an effective way to tailor the electrical properties of graphene. In the optical domain, effects such as strain-induced anisotropic absorption add an appealing functionality to graphene, opening the prospect for atomically thin optical elements. Indeed, graphene is currently one of the notable players in the intense drive towards bendable, thin, and portable electronic displays, where its intrinsically metallic, optically transparent, and mechanically robust nature are major advantages. Given that the intrinsic transparency of a graphene monol…
We describe the effects of vacancies on the electronic properties of a graphene sheet in the presence of a perpendicular magnetic field: from a single defect to an organized vacancy lattice. An isolated vacancy is the minimal possible inner edge, showing an antidotlike behaviour, which results in an extra level between consecutive Landau levels. Two close vacancies may couple to each other, forming a vacancy molecule tuned by the magnetic field. We show that a vacancy lattice introduce an extra band in between Landau levels with localization properties that could lead to extra Hall resistance …
Topological phases of matter give rise to exotic physics that can be leveraged for next generation quantum computation and spintronic devices. Thus, the search for topological phases and the quantum states that they exhibit have become the subject of a massive research effort in condensed matter physics. Topologically protected states have been produced in a variety of systems, including artificial lattices, graphene nanoribbons (GNRs) and bismuth bilayers. Despite these advances, the real-time manipulation of individual topological states and their relative coupling, a necessary feature for t…
Graphene holds great promise for post-silicon electronics, however, it faces two main challenges: opening up a bandgap and finding a suitable substrate material. In principle, graphene on hexagonal boron nitride (hBN) substrate provides potential system to overcome these challenges. Recent theoretical and experimental studies have provided conflicting results: while theoretical studies suggested a possibility of a finite bandgap of graphene on hBN, recent experimental studies find no bandgap. Using the first-principles density functional method and the many-body perturbation theory, we have st…
Artificial honeycomb lattices offer a tunable platform to study massless Dirac quasiparticles and their topological and correlated phases. Here we review recent progress in the design and fabrication of such synthetic structures focusing on nanopatterning of two-dimensional electron gases in semiconductors, molecule-by-molecule assembly by scanning probe methods, and optical trapping of ultracold atoms in crystals of light. We also discuss photonic crystals with Dirac cone dispersion and topologically protected edge states. We emphasize how the interplay between single-particle band structure …
Relativistic quantum mechanics predicts that when the charge of a superheavy atomic nucleus surpasses a certain threshold, the resulting strong Coulomb field causes an unusual atomic collapse state; this state exhibits an electron wave function component that falls toward the nucleus, as well as a positron component that escapes to infinity. In graphene, where charge carriers behave as massless relativistic particles, it has been predicted that highly charged impurities should exhibit resonances corresponding to these atomic collapse states. We have observed the formation of such resonances ar…
We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of Rashba spin-orbit coupling and exchange field, for vanishing intrinsic spin-orbit coupling, possesses non-trivial topological phase which is robust against the direction and modulus of the strain. Besides, we also find that the interplay between Rashba and intrinsic spin-orbit couplings results in a topological phase transition in the strained graphene. Remarka…
We introduce a new approach that allows one complete control over the modulation of the effective twist angle change in few-layer van der Waals heterostructures by irradiating them with longitudinal waves of light at the end of a waveguide. As a specific application, we consider twisted bilayer graphene and show that one can tune the magic angles to be either larger or smaller, allowing in-situ experimental control of the phase diagram of this and other related materials. A waveguide allows one to circumvent the free-space constraints on the absence of longitudinal electric field components of…
We experimentally study the propagation of microwaves in an artificial honeycomb lattice made of dielectric resonators. This evanescent propagation is well described by a tight-binding model, very much like the propagation of electrons in graphene. We measure the density of states, as well as the wave function associated with each eigenfrequency. By changing the distance between the resonators, it is possible to modulate the amplitude of next-(next-)nearest-neighbor hopping parameters and to study their effect on the density of states. The main effect is the density of states becoming dissymme…
By merging bottom-up and top-down strategies we tailor graphene's electronic properties within nanometer accuracy, which opens up the possibility to design optical and plasmonic circuitries at will. In a first step, graphene electronic properties are macroscopically modified exploiting the periodic potential generated by the self assembly of metal cluster superlattices on a graphene/Ir(111) surface. We then demonstrate that individual metal clusters can be selectively removed by a STM tip with perfect reproducibility and that the structures so created are stable even at room temperature. This …
Flat bands near M points in the Brillouin zone are key features of honeycomb symmetry in artificial graphene (AG) where electrons may condense into novel correlated phases. Here we report the observation of van Hove singularity doublet of AG in GaAs quantum well transistors, which presents the evidence of flat bands in semiconductor AG. Two emerging peaks in photoluminescence spectra tuned by backgate voltages probe the singularity doublet of AG flat bands, and demonstrate their accessibility to the Fermi level. As the Fermi level crosses the doublet, the spectra display dramatic stability aga…
A residual disorder in the gate system is the main problem on the way to create artificial graphene based on two-dimensional electron gas. The disorder can be significantly screened/reduced due to the many-body effects. To analyse the screening/disorder problem we consider AlGaAs/GaAs/AlGaAs heterostructure with two metallic gates. We demonstrate that the design least susceptible to the disorder corresponds to the weak coupling regime (opposite to tight binding) which is realised via system of quantum anti-dots. The most relevant type of disorder is the area disorder which is a random variatio…
We have investigated the Fock-Darwin states of the massless chiral fermions confined in a graphitic parabolic quantum dot. In the light of the Klein tunneling, we have analyzed the condition for confinement of the Dirac fermions in a cylindrically-symmetric potential. New features of the energy levels of the Dirac electrons as compared to the conventional electronic systems are dicussed. We have also evaluated the dipole-allowed transitions in the energy levels of the dots. We propose that in the high magnetic field limit, the band parameters can be accurately determined from the dipole-allowe…
We propose a route to all-graphene integrated electronic devices by exploring the influence of strain on the electronic structure of graphene. We show that strain can be easily tailored to generate electron beam collimation, 1D channels, surface states and confinement, the basic elements for all-graphene electronics. In addition this proposal has the advantage that patterning can be made on substrates rather than on the graphene sheet, thereby protecting the integrity of the latter.
Flat electronic bands with tunable structures offer opportunities for the exploitation and manipulation of exotic interacting quantum states. Here, we present a controllable route to construct easily tunable flat bands in folded graphene, by nano origami-controlled strain engineering, and discover correlated states in this system. Via tearing and folding graphene monolayer at arbitrary step edges with scanning tunneling microscope manipulation, we create strain-induced pseudo-magnetic fields as well as resulting flat electronic bands in the curved edges of folded graphene. We show that the int…
The properties of graphene depend sensitively on doping with respect to the charge-neutrality point (CNP). Tuning the CNP usually requires electrical gating or chemical doping. Here, we describe a technique to reversibly control the CNP in graphene with nanoscale precision, utilizing LaAlO$_3$/SrTiO$_3$ (LAO/STO) heterostructures and conductive atomic force microscope (c-AFM) lithography. The local electron density and resulting conductivity of the LAO/STO interface can be patterned with a conductive AFM tip, and placed within two nanometers of an active graphene device. The proximal LAO/STO n…
Recent advances in the creation and modulation of graphene-like systems are introducing a science of "designer Dirac materials". In its original definition, artificial graphene is a man-made nanostructure that consists of identical potential wells (quantum dots) arranged in a adjustable honeycomb lattice in the two-dimensional electron gas. As our ability to control the quality of artificial graphene samples improves, so grows the need for an accurate theory of its electronic properties, including the effects of electron-electron interactions. Here we determine those effects on the band struct…
In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain can result in the misalignment of Dirac cones of different graphene sections in the k-space, doping engineering leads to their displacement in energy. By combining these two effects, we demonstrate that a conduction gap as large as a few hundreds meV can be achieved and hence the enhanced Seebeck coefficient can reach a value higher than 1.4 mV/K in graphene doped heterojunctions with a locally strained area. Such he…
Spatially nonuniform strain is important for engineering the pseudomagnetic field and band structure of graphene. Despite the wide interest in strain engineering, there is still a lack of control on device-compatible strain patterns due to the limited understanding of the structure-strain relationship. Here, we study the effect of substrate corrugation and curvature on the strain profiles of graphene via combined experimental and theoretical studies of a model system: graphene on closely packed SiO2 nanospheres with different diameters (20-200 nm). Experimentally, via quantitative Raman analys…
The fabrication of atomically precise structures with designer electronic properties is one of the emerging topics in condensed matter physics. The required level of structural control can either be reached through atomic manipulation using the tip of a scanning tunneling microscope (STM) or by bottom-up chemical synthesis. In this review, we focus on recent progress in constructing novel, atomically precise artificial materials: artificial lattices built through atom manipulation and graphene nanoribbons (GNRs) realized by on-surface synthesis. We summarize the required theoretical background…
We demonstrate that AA-stacked bilayer graphene (AA-BLG) encapsulated by dielectric materials can possess an energy gap due to the induced mass term. Using the four-band continuum model, we evaluate transmission and reflection probabilities along with the respective conductance. Considering interlayer mass-term difference opens a gap in the energy spectrum and also couples the two Dirac cones. This cone coupling induces an inter-cone transport that is asymmetric with respect to the normal incidence in the presence of asymmetric mass-term. The energy spectrum of the gapped AA-BLG exhibits elect…
Graphene has recently been shown to possess giant nonlinearity; however, the utility of this nonlinearity is limited due to high losses and small interaction volume. We show that by performing waveguide engineering to graphene's nonlinearity, we are able to dramatically increase the nonlinear parameter and decrease the switching optical power to sub-watt levels. Our design makes use of the hybrid plasmonic waveguide and careful manipulation of graphene's refractive index by tuning its Fermi level. The ability to tailor the nonlinear parameter in graphene based waveguides via the Fermi level pr…
In their first-principles calculations of the electronic band structure of graphene under uniaxial strain, Gui, Li, and Zhong [Phys. Rev. B \textbf{78}, 075435 (2008)] have found opening of band gaps at the Fermi level. This finding is in conflict with the tight-binding description of graphene which is closed gap for small strains. In this Comment, we present first-principles calculations which refute the claim that strain opens band gaps in graphene.
We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site energies. In the presence of the strain, the values of the transmission can be effectively adjusted by changing the strengths of the strain, while the transport angle basically keeps unchanged. When an extra on-site energy is simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct tra…
The electronic structure of a single-layer graphene with a periodic Fermi velocity modulation is investigated by using an effective Dirac-like Hamiltonian. In a gapless graphene or in a graphene with a constant energy gap the modulation of the Fermi velocity, as expected, only changes the dispersion between energy and moment, turning the minibands narrower or less narrow than in the usual graphene depending on how the Fermi velocity is modulated and the energy gap remains the same. However, with a modulated energy gap it is possible to control the energy gap of graphene by Fermi velocity engin…
