We have investigated the dc and pulsed current-induced electroresistance in phase separated manganite Nd0.5Ca0.5Mn0.95Ni0.05O3 (NCMONi05) as a function of temperature and magnetic field. It is shown that the negative differential resistance which appears above a threshold current (Ic) and hysteresis in the V-I progressively vanish with increasing period of the current pulses. However a strong non-linearity in V-I exists even for a pulse period of 6s. The peak voltage at Ic decreases in magnitude and shifts towards higher current values with increasing strength of the magnetic field. The strong nonlinear behavior and the negative differential resistance in the dc current sweep are accompanied by a rapid increase of the sample surface temperature and therefore primarily arise from the Joule heating in the sample. While the Joule heating assists electroresistance in the high dc current regime, the nonlinearity in the pulsed current sweep and the resistivity switching between a high and low value induced by controlling the width and period of pulses can not be explained solely on the basis of Joule heating.
Metal-insulator transition and electroresistance in lanthanum/calcium manganites La_<1-x>Ca_<x>MnO_<3> (x = 0-0.5) from voltage-current-temperature surfaces
Colossal electroresistance and colossal magnetoresistive step in paramagnetic insulating phase of single crystalline bilayered manganite(La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$
我们报告了在（La $_{0.4}$ Pr $_{0.6}$）$_{1.2}$ Sr $_{1.8}$ Mn $_{2}$ O $_{7}$的顺磁绝缘（PMI）状态下在$ab$ -平面上施加电流引起的低温电阻的显著降低。在较低的温度下观察到一个巨大的电阻效应，达到~ 95%。在低于10 K的低温下，在5 T附近出现一个巨大的磁阻阶跃，并伴随着绝缘体-金属转变的超尖锐宽度。向晶体注入更高的电流会导致阶跃跃迁消失。这些发现与研究晶体的PMI矩阵内钉扎的短程电荷有序簇的存在有密切的关系。
In systems with time-reversal symmetry, the orbital magnetization is zero in equilibrium. Recently, it has been proposed that the orbital magnetization can be induced by an electric current in a helical crystal structure in the same manner as that in a classical solenoid. In this paper, we extend this theory and study the current-induced orbital magnetization in a broader class of systems without inversion symmetry. First, we consider polar metals which have no inversion symmetry. We find that the current-induced orbital magnetization appears in a direction perpendicular to the electric curren…
We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall magnetoresistance and confirmed by the magnetic field-induced spin-flop transition of the CoO layer. By applying current pulses and magnetic fields, we quantify the efficiency of the acting current-induced torques and estimate a current-field equivalence ratio of $4x10^{-11} T A^{-1} m^2$. The Néel vector final state ($n \perp j$) is in line with a thermomagnetoelastic switching mechanism for a negative magnetoelastic cons…
Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and out-of-plane anisotropy respectively, are separated by a spacer Ta layer, which plays a dual role of inducing antiferromagnetic interlayer coupling, and contributing to the current-induced effective magnetic field through the spin Hall effect. The current-induced magnetization switching behavior can be tuned by pre-magnetizing the in-plane Co layer. The antiferrom…
The effects of current induced Néel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism - photoemission electron microscopy (XMLD-PEEM). We observed current induced switching of AFM domains essentially corresponding to morphological features of the samples. Reversible as well as irreversible Néel vector reorientation was obtained in different parts of the samples and the switching of up to 30 % of all domains in the field of view of 10 $μ$m is demonstrated. Our direct microscopical observations are c…
The electrical manipulation of magnetization by current-induced spin torques has given access to realize a plethora of ultralow power and fast spintronic devices such as non-volatile magnetic memories, spin-torque nano-oscillators, and neuromorphic computing devices. Recent advances have led to the notion that relativistic spin-orbit coupling is an efficient source for current-induced torques, opening the field of spin-orbitronics. Despite the significant progress, however, the fundamental mechanism of magnetization manipulation, the requirement of spin currents in generating current-induced t…
We report chirality-induced current-in-plane magnetoresistance (CIP-MR) in chiral molecule/ferromagnetic metal bilayer at room temperature. The previously reported chiralityinduced current-perpendicular-to-plane magnetoresistance (CPP-MR) originates from the chiral induced spin-selectivity (CISS) effect that needs charge-current passing through the molecule. In contrast, the observed CIP-MR in the present study requires no bias charge current through the molecule. The temperature dependence of CIP-MR suggests thermally induced spin-polarization in the chiral molecules is the key for the observ…
Magnetic heterostructure Mo/CoFeB/MgO has strong perpendicular magnetic anisotropy and thermal stability. Through current-induced hysteresis loop shift measurements, we show that the dampinglike spin-orbit torque (SOT) efficiency of Mo/CoFeB/MgO heterostructure is $ξ_{DL}\approx -0.003\pm 0.001$ and fairly independent of the annealing temperature from 300$^\circ$C to 400$^\circ$C. Though $|ξ_{DL}|$ is small while compare to those from Ta or W-based heterostructures, reversible current-induced SOT switching of a thermally-stable Mo/CoFeB/MgO heterostruture can still be achieved. Furthermore, we…
We have performed precise Hall measurements for the ferrotoroidic candidate material UNi4B. Below Neel temperature TN ~ 20 K (corresponding to the ferrotoroidic transition temperature), a Hall voltage becomes finite even at zero field and changes proportional to the square of current density; by contrast, it is almost zero above TN. Moreover, we have found that a current-induced magnetization estimated from our Hall effect measurements is qualitatively consistent with the previous directly measured value. These results provide strong evidence for a magnetoelectric phenomenon uniquely in ferrot…
We report on the switching of the in-plane magnetization of thin yttrium iron garnet (YIG)/Pt bilayers induced by an electrical current. The switching is either field-induced and assisted by a dc current, or current-induced and assisted by a static magnetic field. The reversal of the magnetization occurs at a current density as low as $10^5$~A/cm$^{2}$ and magnetic fields of $\sim 40$~$μ$T, two orders of magnitude smaller than in ferromagnetic metals, consistently with the weak uniaxial anisotropy of the YIG layers. We use the transverse component of the spin Hall magnetoresistance to sense th…
