陷阱对宽禁带半导体中X射线感生电导电流脉冲的影响
Effect of traps on the current impulse from X-ray induced conductivity in wide-gap semiconductors
摘要：
本文提出了一个计算宽禁带半导体中X射线感生电导的电流脉冲的理论模型，其中含有不同类型的陷阱和复合中心。研究了具有欧姆接触的半导体对单X射线光子的吸收。确定了陷阱和复合中心的主要参数对电流脉冲的形状和幅度的影响。
英文摘要：
This article presents a theoretical model for the calculation of the current impulse from X-ray induced conductivity in wide-gap semiconductors that contain different types of traps and recombination centres. The absorption of one X-ray photon in a semiconductor with ohmic contacts was investigated. The influence of the main parameters of the traps and recombination centres on the shape and amplitude of the current impulse was determined.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
