arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 0903.0225cond-mat.str-el
收藏

巡游铁磁SrRuO $_3$薄膜的基本厚度极限

Fundamental thickness limit of itinerant ferromagnetic SrRuO$_3$ thin films

Young Jun Chang, Choong H. Kim, S. -H. Phark, Y. S. Kim, J. Yu, T. W. Noh

摘要:

我们报告的基本厚度限制的巡回铁磁氧化物SrRuO $_3$,可能会出现从轨道选择性量子限制效应。实验上,SrRuO $_3$膜即使在2个晶胞(uc)的厚度下仍保持金属性,但居里温度T $_C$在4 uc时开始降低,并在2 uc时变为零。使用Stoner模型,我们将T $_C$的降低归因于态密度(N $_o$)的降低。即,在薄膜几何形状中,杂化Ru-d $_yz,zx$轨道由顶部和底部界面终止,导致量子限制和N $_o$的减少。

英文摘要:

We report on a fundamental thickness limit of the itinerant ferromagnetic oxide SrRuO$_3$ that might arise from the orbital-selective quantum confinement effects. Experimentally, SrRuO$_3$ films remain metallic even for a thickness of 2 unit cells (uc), but the Curie temperature, T$_C$, starts to decrease at 4 uc and becomes zero at 2 uc. Using the Stoner model, we attributed the T$_C$ decrease to a decrease in the density of states (N$_o$). Namely, in the thin film geometry, the hybridized Ru-d$_yz,zx$ orbitals are terminated by top and bottom interfaces, resulting in quantum confinement and reduction of N$_o$.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑