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arXiv 0902.2414cond-mat.mtrl-scicond-mat.stat-mech
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V2H中与深度相关的临界行为

Depth-dependent critical behavior in V2H

Charo I. Del Genio, Johann Trenkler, Kevin E. Bassler, Peter Wochner, Dean R. Haeffner, George F. Reiter, Jianming Bai, Simon C. Moss

摘要:

利用X射线漫散射研究了V2 H缺陷“皮层”中有序-无序相变的临界行为。在表层中,存在垂直于表面取向的位错线墙。位错线密度随深度的增加而不断减小。我们发现,由于这种不均匀分布的缺陷,过渡有效地发生在一个依赖于深度的局部临界温度。提出了一个与深度相关的标度律来描述相应的临界有序行为。

英文摘要:

Using X-ray diffuse scattering, we investigate the critical behavior of an order-disorder phase transition in a defective "skin-layer" of V2H. In the skin-layer, there exist walls of dislocation lines oriented normal to the surface. The density of dislocation lines within a wall decreases continuously with depth. We find that, because of this inhomogeneous distribution of defects, the transition effectively occurs at a depth-dependent local critical temperature. A depth-dependent scaling law is proposed to describe the corresponding critical ordering behavior.

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