径向结硅微柱阵列的深度相关EBIC显微术
Depth-Dependent EBIC Microscopy of Radial-Junction Si Micropillar Arrays
摘要：
制造方面的最新进展使得径向结架构能够用于成本有效且高性能的光电子器件。与平面PN结不同，径向结几何形状使三维（3D）结构中的光学相互作用最大化，同时经由共形PN结有效地提取所生成的载流子。在本文中，我们报告的径向PN结，包括由深反应离子刻蚀（DRIE）和磷气体扩散形成的n型层形成的p型硅微柱的特性。我们使用电子束感应电流（EBIC）显微镜从柱的侧壁访问的3D结的轮廓。我们的EBIC图像揭示了均匀的PN结保形构造的3D柱阵列。基于蒙特卡罗模拟和EBIC建模，我们估计了反映PN结质量的局部载流子分离/收集效率。我们发现柱阵列的EBIC效率随着入射电子束能量的增加而增加，这与在高质量平面PN结中观察到的EBIC行为一致。我们的柱阵列的EBIC效率的大小在10 kV下为约70%，略低于平面器件的EBIC效率（约81%）。我们认为，这种减少可能是由于未钝化的支柱表面和非预期的复合中心在DRIE过程中引入的支柱核心。我们的研究结果支持的深度依赖EBIC方法是理想的适合于评估PN结上形成的微/纳米结构的半导体与各种几何形状。
英文摘要：
Recent advances in fabrication have enabled radial-junction architectures for cost-effective and high-performance optoelectronic devices. Unlike a planar PN junction, a radial-junction geometry maximizes the optical interaction in the three-dimensional (3D) structures, while effectively extracting the generated carriers via the conformal PN junction. In this paper, we report characterizations of radial PN junctions that consist of p-type Si micropillars created by deep reactive-ion etching (DRIE) and an n-type layer formed by phosphorus gas diffusion. We use electron-beam induced current (EBIC) microscopy to access the 3D junction profile from the sidewall of the pillars. Our EBIC images reveal uniform PN junctions conformally constructed on the 3D pillar array. Based on Monte-Carlo simulations and EBIC modeling, we estimate local carrier separation/collection efficiency that reflects the quality of the PN junction. We find the EBIC efficiency of the pillar array increases with the incident electron beam energy, consistent with the EBIC behaviors observed in a high-quality planar PN junction. The magnitude of the EBIC efficiency of our pillar array is about 70 % at 10 kV, slightly lower than that of the planar device (about 81 %). We suggest that this reduction could be attributed to the unpassivated pillar surface and the unintended recombination centers in the pillar cores introduced during the DRIE processes. Our results support that the depth-dependent EBIC approach is ideally suitable for evaluating PN junctions formed on micro/nanostructured semiconductors with various geometry.
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