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arXiv 0902.0270cond-mat.mtrl-sci
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低温下光激发块体GaAs的超快自旋动力学

Ultrafast Spin Dynamics in Optically Excited Bulk GaAs at Low Temperatures

M. Krauss, R. Bratschitsch, Z. Chen, S. T. Cundiff, H. C. Schneider

摘要:

本文介绍了在低温下提高光激发条件下GaAs体材料中电子自旋动力学的研究。我们的时间分辨法拉第旋转测量产生亚纳秒电子自旋退相时间在很宽的范围内的n-掺杂浓度的定量协议与微观处理的电子自旋动力学。计算结果表明,在高激发条件下,自旋退相运动窄化的发生和崩溃。我们还发现,在较低的激发条件下,发生金属-绝缘体转变的掺杂密度周围的自旋退相时间的峰值。然而,高激发的实验结果可以解释没有金属-绝缘体转变。因此,我们属性的自旋退相时间的影响,筛选和散射的自旋动力学的激发电子的峰值。

英文摘要:

This paper presents a study of electron spin dynamics in bulk GaAs at low temperatures for elevated optical excitation conditions. Our time-resolved Faraday rotation measurements yield sub-nanosecond electron spin dephasing-times over a wide range of n-doping concentrations in quantitative agreement with a microscopic treatment of electron spin dynamics. The calculation shows the occurrence and breakdown of motional narrowing for spin dephasing under elevated excitation conditions. We also find a peak of the spin dephasing time around a doping density for which, under lower excitation conditions, a metal-insulator transition occurs. However, the experimental results for high excitation can be explained without a metal-insulator transition. We therefore attribute the peak in spin-dephasing times to the influence of screening and scattering on the spin-dynamics of the excited electrons.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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