基于GaAs/ErAs/GaAs异质结构的1550 nm兼容超快光电导材料
1550 nm compatible ultrafast photoconductive material based on a GaAs/ErAs/GaAs heterostructure
摘要：
报道了GaAs/ErAs/GaAs异质结的亚带隙吸收和超快弛豫。利用傅里叶变换红外光谱和时域泵浦探测技术研究了其红外吸收和1550 nm激发的超快光响应。位于2.0 μ m（0.62 eV）和2.7 μ m（0.45 eV）的两个吸收峰分别来自ErAs/GaAs界面肖特基态和GaAs内部的亚带隙跃迁。GaAs/ErAs/GaAs异质结构的光致载流子寿命（使用1550 nm光激发）测量为低至190 fs，使其成为1550 nm技术兼容的高临界击穿场THz器件的有前途的材料。提出了弛豫机制，揭示了ErAs的功能。
英文摘要：
The sub-bandgap absorption and ultrafast relaxation in a GaAs/ErAs/GaAs heterostructure are reported. The infrared absorption and 1550 nm-excited ultrafast photo-response are studied by Fourier transform infrared (FTIR) spectrometry and time-domain pump-probe technique. The two absorption peaks located at 2.0 um (0.62 eV) and 2.7 um (0.45 eV) are originated from the ErAs/GaAs interfacial Schottky states and sub-bandgap transition within GaAs, respectively. The photo-induced carrier lifetime, excited using 1550 nm light, is measured to be as low as 190 fs for the GaAs/ErAs/GaAs heterostructure, making it a promising material for 1550-nm-technology-compatible, high critical-breakdown-field THz devices. The relaxation mechanism is proposed and the functionality of ErAs is revealed.
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