碳辐照SI-GaAs光电导THz探测器
Carbon Irradiated SI-GaAs for Photoconductive THz Detection
摘要：
我们在这里报告了一种光电导材料的太赫兹产生和检测与亚皮秒载流子寿命的C12（碳）照射商业上可用的半绝缘（SI）GaAs。我们能够降低载流子寿命的SI-GaAs下到亚皮秒，通过照射它与不同剂量的碳（C12）离子。随着辐照剂量从~1012 /cm ~ 2增加到~1015 /cm ~ 2，SI-GaAs的载流子寿命单调下降到0.55皮秒，与普通SI-GaAs相比，SI-GaAs的THz脉冲探测性能得到了显著提高。
英文摘要：
We report here a photoconductive material for THz generation and detection with sub-picosecond carrier lifetime made by C12 (Carbon) irradiation on commercially available semi-insulating (SI) GaAs. We are able to reduce the carrier lifetime of SI-GaAs down to sub-picosecond by irradiating it with various irradiation dosages of Carbon (C12) ions. With an increase of the irradiation dose from ~1012 /cm2 to ~1015 /cm2 the carrier lifetime of SI-GaAs monotonously decreases to 0.55 picosecond, resulting in strongly improved THz pulse detection compared with normal SI-GaAs.
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