AI 中文总结
本研究开发了利用SnSe缓冲层和偏角GaAs衬底的异位固相外延方法，实现了单取向GeSe薄膜的集成，使各向异性响应提升2倍，为偏振敏感技术提供了新集成途径。
AI 中文摘要
GeSe等层状IV-VI半导体具有强面内光学各向异性，是制备偏振敏感光子器件的理想候选材料。但要在可扩展平台上实现这些特性，需在GaAs等技术相关衬底上进行异质外延集成，而GeSe的直接生长因低温下易形成玻璃、高温下蒸气压高而变得复杂。为解决该问题，我们开发了一种利用SnSe缓冲层和偏角GaAs衬底的异位固相外延方法，以制备单取向的结晶GeSe薄膜。通过偏振反射测量，我们发现稳定单一平面内取向可使扶手椅方向与锯齿方向之间的各向异性响应提升2倍。本研究为利用GeSe及其合金的各向异性光学特性制备偏振敏感技术提供了新的集成途径。
英文摘要
Layered IV-VI semiconductors such as GeSe exhibit strong in-plane optical anisotropy, making them promising candidates for polarization-sensitive photonic devices. However, realizing these properties in scalable platforms requires heteroepitaxial integration on technologically relevant substrates like GaAs. Direct growth of GeSe is complicated by its glass formation at low temperatures and high vapor pressure at elevated temperatures. To overcome this, we develop a method for ex-situ solid-phase epitaxy utilizing a SnSe buffer and offcut GaAs substrate to enable single-orientation crystalline GeSe films. Using polarized reflection measurements, we find that stabilizing a single-in-plane-orientation results in a 2x increase in anisotropic response between the armchair and zigzag directions. This work provides a new integration route to harness the anisotropic optical properties of GeSe and its alloys for polarization-sensitive technologies.
Comments11 pages, 5 figures
