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arXiv 0811.0598physics.plasm-ph
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直接测量硅样品表面与SF6等离子体相互作用的化学反应引起的能通量

Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a SF6 plasma

Remi Dussart, Anne-Lise Thomann, Laurianne E. Pichon, Larbi Bedra, Nadjib Semmar, Philippe Lefaucheux, Jacky Mathias, Yves Tessier

摘要:

利用热通量微传感器(HFM)直接测量了硅表面与SF6等离子体之间的化学反应引起的能量交换。将能流演化与表面仅发生少量反应时的能流演化进行了比较,以显示化学反应的部分。在800 W时,由于化学反应而测得的能通量估计为约7 W.cm. cm-2,而离子轰击和其他贡献为0.4 W. cm-2。研究了HFM信号的时间演化特性。给出SiF 4分子的反应的摩尔焓进行了评估,并与文献中给出的值一致。

英文摘要:

Energy exchanges due to chemical reactions between a silicon surface and a SF6 plasma were directly measured using a heat flux microsensor (HFM). The energy flux evolution was compared with those obtained when only few reactions occur at the surface to show the part of chemical reactions. At 800 W, the measured energy flux due to chemical reactions is estimated at about 7 W.cm\^{-2} against 0.4 W.cm\^{-2} for ion bombardment and other contributions. Time evolution of the HFM signal is also studied. The molar enthalpy of the reaction giving SiF4 molecules was evaluated and is consistent with values given in literature.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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