用于新型电子器件应用的单晶硅纳米颗粒的等离子体合成
Plasma synthesis of single crystal silicon nanoparticles for novel electronic device applications
摘要：
硅的单晶纳米颗粒，直径为几十纳米，可以适合作为单纳米颗粒电子器件的构建块。以前的研究表明，在低压等离子体中产生的纳米颗粒的合成纳米晶体的直径为2-10纳米，但较大的颗粒是无定形或多晶。这项工作报告了使用一个狭窄的，电容耦合低压等离子体产生单晶硅纳米粒子的直径在20-80 nm之间。颗粒高度取向，主要为立方体形状。粒度分布是相当单分散的。电子显微镜研究证实，纳米粒子是高度取向的金刚石立方硅。
英文摘要：
Single-crystal nanoparticles of silicon, several tens of nm in diameter, may be suitable as building blocks for single-nanoparticle electronic devices. Previous studies of nanoparticles produced in low-pressure plasmas have demonstrated the synthesis nanocrystals of 2-10 nm diameter but larger particles were amorphous or polycrystalline. This work reports the use of a constricted, filamentary capacitively coupled low-pressure plasma to produce single-crystal silicon nanoparticles with diameters between 20-80 nm. Particles are highly oriented with predominant cubic shape. The particle size distribution is rather monodisperse. Electron microscopy studies confirm that the nanoparticles are highly oriented diamond-cubic silicon.
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