A model for high-temperature superconductors incorporating antiferromagnetism, d-wave superconductivity, and no double lattice-site occupancy can give energy surfaces exquisitely balanced between antiferromagnetic and superconducting order for specific ranges of doping and temperature. The resulting properties can reconcile a universal cuprate phase diagram with rich inhomogeneity, relate that inhomogeneity to pseudogaps, give a fundamental rationale for giant proximity effects and other emergent behavior, and provide an objective framework for separating essential from peripheral in the superconducting mechanism.
Examination of the claim by Loram and Tallon that the energy-resolved STM results, in their apparent inhomogeneity, misrepresent the true bulk behaviour of the HTSC cuprates
Stripe-like nanoscale structural phase separation and optimal inhomogeneity in superconducting BaPb$_{1-x}$Bi$_x$O$_3$
在超导BaPb $_{1-x}$ Bi $_x$ O $_3$中观察到了部分无序条纹形式的结构相分离，其特征长度尺度在纳米范围内。超导相干长度的演变与组合物相对于这些条纹的大小表明在确定超导圆顶的形状的纳米结构的重要作用。提出最大值$T_c$由一种“最佳不均匀性”决定，其特征是从一个不均匀的宏观超导体到一个颗粒状超导体的交叉，对于这种交叉，相位涨落抑制了$T_c$ .
Topological phase transition with nanoscale inhomogeneity in (Bi$_{1-x}$In$_{x}$)$_{2}$Se$_{3}$
拓扑绝缘体是一类具有非平凡拓扑结构的能带绝缘体，是由于强自旋轨道耦合导致能带反转的结果。通过调节自旋-轨道耦合强度，可以实现拓扑绝缘体与正常绝缘体之间的转变，并在实验上观察到了这种转变。然而，在以前的研究中没有解决的拓扑相变的化学障碍的影响。本文报道了用扫描隧道显微镜/光谱和第一性原理对In掺杂Bi $_2$ Se $_3$单晶拓扑相变的系统研究。令人惊讶的是，没有带隙闭合观察到整个过渡。此外，我们的光谱成像结果表明，在缺陷是非常有效的“抑制剂”的能带反转，这导致微观相分离的拓扑绝缘体和正常绝缘体的纳米区域跨越“过渡”。所观察到的拓扑电子不均匀性表明拓扑材料中化学无序的显著影响，为拓扑相变的基本理解提供了新的思路。
Electronic inhomogeneity in Cs- and Sb-terminated surfaces of CsV$_3$Sb$_5$ probed by scanning photoemission spectromicroscopy
Waseda University（早稻田大学）；Sincrotrone Trieste S.C.p.A.（的里雅斯特同步辐射中心）；Beijing Institute of Technology（北京理工大学）；Southern University of Science and Technology（南方科技大学）
Disorder Effects on Competition between Antiferromagnetism and Superconductivity in Cuprate Superconductors through the Enhancement in Charge Susceptibility
Correlating off-stoichiometric doping with nanoscale electronic disorder and quasiparticle interference pattern in high-$T_c$ superconductor Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$
本文提出了一种微观理论，用以解释超导体Bi $_2$ Sr $_2$ CaCu $_2$ O $_{8+δ}$中所观察到的电子无序。的基本现象被证明是一致的两种类型的间隙氧掺杂剂的存在：那些主要作为电荷储备和那些接近顶端平面贡献的载体和静电势的CuO $_2$平面。后者的非线性屏蔽产生掺杂空穴浓度的纳米级变化，导致电子不均匀性。基于扩展的t- $J$模型的无限制Gutzwiller近似，我们提供了一个一致的解释观察到的掺杂剂的位置和配对间隙及其空间演化之间的相关性。我们发现，氧掺杂剂的主要原因都对间隙无序和准粒子干涉图案。
Disorder-Induced Griffiths like Phase and Charge Localization in Sr2FeRuO6
South China University of Technology（华南理工大学）；Institute of Engineering and Management, Sector-V（维 sector 工程管理学院）；University of Engineering and Management, Newtown（纽敦工程与管理大学）；Saha Institute of Nuclear Physics, A CI of Homi Bhabha National Institute（萨哈核物理研究所，霍米·巴巴国立学院成员机构）；Department of Physics, Aditya University（阿迪蒂亚大学物理系）
Magnetic Quantum Criticality inside the Superconducting State Revealed by Penetration Depth Scaling with Local $T_{\mathrm c}$
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory（斯坦福材料能源科学研究所，SLAC国家加速器实验室）；Geballe Laboratory for Advanced Materials, Stanford University（斯坦福大学先进材料格巴莱实验室）；College of Science, Ibaraki University（茨城大学理学院）；Research and Education Center for Atomic Sciences, Ibaraki University（茨城大学原子科学研究与教育中心）
