J. Cayssol, B. Huard, D. Goldhaber-Gordon
Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent contribution of the contacts to the total resistance and noise in the diffusive and ballistic regimes.
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This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field effect transistors (FETs). The absence of an energy band gap is shown to result in severe shortcomings for logic applications. Possibilities to engineer a band gap in graphene FETs including quantum confinement in graphene Nanoribbons (GNRs) and electrically or substrate induced asymmetry in double and multi layer graphene are discussed. Graphene FETs are sh…
A novel graphene transistor architecture is reported. The transistor has a U-shape geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded 10^5.
Contact resistances between organic semiconductors and metals can dominate the transport properties of electronic devices incorporating such materials. We report measurements of the parasitic contact resistance and the true channel resistance in bottom contact poly(3-hexylthiophene) (P3HT) field-effect transistors with channel lengths from 400 nm up to 40 $μ$m, from room temperature down to 77 K. For fixed gate voltage, the ratio of contact to channel resistance decreases with decreasing temperature. We compare this result with a recent model for metal-organic semiconductor contacts. Mobilitie…
We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GFETs display saturation regions that can be tuned by modifying the top gate voltage, and have on/off ratios of up to 10^8 at room temperature. In addition, the nanoperforated GFETs display orders of magnitude higher photoresponses than any room-temperature graphene detector configurations that do not involve heterostructures with bandgap materials.
In this manuscript, we present a field effect transistor with a channel consisting of a two-dimensional electron gas located at the interface between an ultrathin metallic film of Ni and a p-type Si(111) substrate. We have demonstrated that the two-dimensional electron gas channel is modulated by the gate voltage. The dependence of the drain current on the drain voltage has no saturation region, similar to a field effect transistor based on graphene. However, the transport in this transistor is not ambipolar, as in graphene, but unipolar.
Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space and to find a device structure with promising performance in terms of transistor operation. Our model, based on the effective mass approximation and ballistic transport assumptions, takes into account bilayer-graphene tunable gap and self polarization, and includes all band-to-band tunneling current components, which are shown to represent the major limitatio…
We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such device will have a pronounced switching effect at low gate voltage and high on/off current ratio at room temperature.
We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10-4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.
We invented a method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. To stimulate the growth of graphene layers on oxidized silicon a catalyst system of nanometer thin aluminum/nickel double layer is used. This catalyst system is structured via liftoff before the wafer enters the catalytic chemical vapor deposition (CCVD) chamber. In the subsequent methane based growth process monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate, whereby t…
We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-ele…
Tens of graphene transistors with nanoperforated channels and different channel lengths were fabricated at the wafer scale. The nanoholes have a central diameter of 20 nm and a period of 100 nm, the lengths of the channel being of 1, 2, 4 or 8 micrometers. We have found that the mobility in these 2 micrometer-wide transistors varies from about 10400 cm2/Vs for a channel length of 1 micrometer to about 550 cm2/Vs for a channel length of 8 micrometer. Irrespective of the mobility value, in all transistors the on-off ratio is in the range 10^3-10^4 at drain and gate voltages less than 2 V. The ch…
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current saturation down to 500 nm channel lengths with intrinsic transconductance values above 400 mS/mm. The work demonstrates the favorable properties of using h-BN as a gate dielectric for graphene FETs.
Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed. Role of rechargeable defects (interface traps) near or at the interface between graphene and insulated layers has also described.
We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries, and can be used t…
A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p structure forms along the graphene device due to the doping of the graphene by the metal contacts. The modification of the electronic structure is not limited only underneath the metal electrodes, but extends 0.2-0.3 um into the graphene channel. The asymmetric conduction behavior of electrons and holes that is commonly observed in graphene transistors is di…
Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole conductance asymmetry can be modulated by the bottom gate. In this letter, we explain this observation by postulating the presence of an effective thin interfacial dielectric layer between the metal contact and the underlying graphene. Electrical results from quantum transport calculations accounting for this modified electrostatics corroborate well with the experim…
This work evaluates the performance of carbon nanotube field effect transistors (CNTFET) using few layer graphene as the contact electrode material. We present the experimental results obtained on the barrier height at CNT graphene junction using temperature dependent IV measurements. The estimated barrier height in our devices for both holes and electrons is close to zero or slightly negative indicating the Ohmic contact of graphene with the valence and conduction bands of CNTs. In addition, we also report that there is no correlation between the barrier height and thickness of graphene.
Based on diffusion-drift approximation a version of analytic compact model for large-area double-gate graphene field-effect transistor is presented. As parts of the model, the electrostatics of double-gate structure is described and a unified phenomenological approach for modeling of the two drain current saturation modes is proposed.
High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias dependence of fT and fmax and the effect of the ambipolar channel on transconductance and output resistance are also examined.
By means of catalytic chemical vapor deposition (CCVD) in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate without the need to transfer graphene layers. In-situ grown MoLGFETs exhibit the expected Dirac point together with the typical low on/off-current ratios. In contrast, BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio up to 1E7. The complete fabrication process is silicon CMOS compatible. This will allow a simple and low-cost in…
Using 2-D self-consistent ballistic quantum transport simulations, we investigate the short-channel behavior of graphene field-effect transistors and its impact on the device transconductance and subsequently the intrinsic cut-off frequency (fT). Although with thin oxides, fT expectedly scales inversely with the gate length, significant band-to-band tunneling at OFF state leads to a departure from this trend in case of thick oxides. We also examine the effect of achieving better electrostatics at the cost of increased gate capacitance and illustrate that this can indeed degrade the fT. These c…
We invented a novel method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. By means of catalytic chemical vapor deposition (CCVD) the in-situ grown bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate, whereby the number of stacked graphene layers is determined by the selected CCVD process parameters, e.g. temperature and gas mixture. BiLGFETs exhibit ultra-high on/off-current ratios of 107 at room temperature, exceeding previously reported values by several orders of magnitude. This will allow a …
In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor (3NN) sp3 tight-binding Hamiltonian, and finally used to compute ballistic transport in transistors based on functionalized graphene. Due to the large energy gap, the proposed devices have many of the advantages provided by …
We describe the fundamental trade-offs in engineering the mobility, current saturation and ON- OFF ratios in graphene transistors. Surprisingly, the trade-offs arise solely from an asymptotic constraint on the high energy bandstructure and independent of scattering processes. This places graphite derivatives (bulk monolayer graphene, uniaxially strained graphene nanoribbons, carbon nanotubes and bilayer graphene) on the same 3-parameter mobility-bandgap-scattering length (μ - Egap -λ) plot, proximal to other semiconductors. In addition to this low-bias trade-off, the high bias current bears si…
In this work, an evaluation of the contact quality of black phosphorus (BP) field-effect transistors (FETs) from different technologies previously reported is performed by means of an efficient and reliable contact resistance extraction methodology based on individual device practical characteristics. A good agreement is achieved between the extracted values with the Y-function method used here and reference values obtained with other methods considering internal values as well as with more expensive methods involving fabricated test structures. The method enables a direct evaluation of differ…
The current through ferromagnetic single-electron transistors (SET's) is considered. Using path integrals the linear response conductance is formulated as a function of the tunnel conductance vs. quantum conductance and the temperature vs. Coulomb charging energy. The magneto-resistance of ferromagnet-normal metal-ferromagnet (F-N-F) SET's is almost independent of the Coulomb charging energy and is only reduced when the transport dwell time is longer than the spin-flip relaxation time. In all-ferromagnetic (F-F-F) SET's with negligible spin-flip relaxation time the magneto-resistance is calcul…
We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements performed as a function of applied source-drain bias, electron number and magnetic field reveal well defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative differential regime is the spin-polarized detection of …
We have fabricated and measured ballistic graphene transistors with two oblique gates that can be independently biased. The gate lengths are about 38 nm and are separated by a distance of 30 nm, the tilting angle being of 45o with respect to source and drain electrodes distanced at 190 nm. Electric measurements reveal specific properties of ballistic carrier transport, i.e. nonlinear drain voltage-drain current dependence, showing a saturation region, and negative differential resistance at certain bias voltages, which cannot be explained without physical mechanisms related to ballistic transp…
We report two examples of transport phenomena based on sharp features in the effective density of states of molecular-scale transistors: Kondo physics in C$_{60}$-based devices, and gate-modulated negative differential resistance (NDR) in ``control'' devices that we ascribe to adsorbed contamination. We discuss the need for a statistical approach to device characterization, and the criteria that must be satisfied to infer that transport is based on single molecules. We describe apparent Kondo physics in C$_{60}$-based single-molecule transistors (SMTs), including signatures of molecular vibrat…
In this work, we investigate the intrinsic limits of subthreshold slope in a dual gated bilayer graphene transistor using a coupled self-consistent Poisson-bandstructure solver. We benchmark the solver by matching the bias dependent bandgap results obtained from the solver against published experimental data. We show that the intrinsic bias dependence of the electronic structure and the self-consistent electrostatics limit the subthreshold slope obtained in such a transistor well above the Boltzmann limit of 60mV/decade at room temperature, but much below the results experimentally shown till …
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two different kinds of hysteresis in their electrical characteristics. Charge transfer causes a positive shift in the gate voltage of the minimum conductance, while capacitive gating can cause the negative shift of conductance with respect to gate voltage. The positive hysteretic phenomena decay with an increase of the number of layers in graphene flakes. Self-…
Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional silicon devices. As a critical step in the design cycle of modern IC products, compact model refers to the development of models for integrated semiconductor devices for use in circuit simulations. The purpose of this review is to provide a theoretical description of current compact model of graphene field-effect transistors. Special attention is devoted to…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor at any temperature. The path integrals are evaluated by the semiclassical method to yield an explicit non-perturbation form of the quantum conductance of the SET transistor. An anomaly of the quantum conductance is found if the tunnel resistances are much smaller than the quantum resistance. The dependence of the conductance on the gate voltage is also discu…
We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the non-equilibrium Green's Function formalism and a tight-binding hamiltonian. With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance, reduced sensitivity on the variability of channel chirality, and similar leakage problems due to band-to-band tunneling. Acceptable transistor performance requires effective nanoribbon width of 1-2 nm, that co…
Recent experiments shown that graphene epitaxially grown on Silicon Carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully ballistic graphene-on-SiC Tunnel Field-Effect Transistors (TFETs), and assess the DC and high frequency figures of merit. The steep subthreshold behavior can enable I_{ON}/I_{OFF} ratios exceeding 10^4 even with a low supply voltage of 0.15 V, for devices with gatelength down to 30 nm. Intrinsic transistor delays smaller than 1 ps are obtained. These factor…
The effects of edge irregularity and mixed edge shapes on the characteristics of graphene nanoribbon transistors are examined by self-consistent atomistic simulations based on the non-equilibrium Green's function formalism. The minimal leakage current increases due to the localized states induced in the band gap, and the on-current decreases due to smaller quantum transmission and the self-consistent electrostatic effect in general. Although the ratio between the on-current and minimal leakage current decreases, the transistor still switches even in the presence of edge roughness. The variatio…
Negative differential resistance (NDR) with room temperature peak-valley-ratio of 8 has been observed in a ballistic field-effect-transistor (FET) based on graphene, having an oblique top gate. Graphene FETs with a top gate inclination angle of 45 degrees and a drain-source distance of 400 nm were fabricated on a chip cut from a 4 inch graphene wafer grown by CVD. From the 60 measured devices, NDR was observed only in the regions where the CVD graphene displays the Raman signature of defectless monolayers. In other specific positions on the wafer, where graphene quality was not high enough and…
We report on the fabrication and electrical characterisation of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a slight improvement compared to graphene SETs on SiO2. In particular, SETs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T in contrast to measurements reported on SETs on SiO2. This result indicates a reduced surface disorder potential in SETs on hBN which might be an important step towards clean and more controllable graphene …
Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the appearance of the hysteresis and the role of charge transfer between graphene and its environment are not clarified yet. We analyze the relation between electrochemical and electronic properties of graphene FET in moist environment extracted from the standard back gate dependence of the graphene resistance. We argue that graphene based FET on a regular SiO2 substra…
This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In par…
We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets suspended in water assembled via dielectrophoresis. The two terminal resistances of the devices were improved by an order of magnitude upon mild annealing at 200 0C in Ar/H2 environment for 1 hour. With the application of a backgate voltage, all of the devices showed FET behavior with maximum hole and electron mobilities of 4.0 and 1.5 cm2/Vs respectively. This study shows promise for scaled up fabrication of graphene based nanoelectronic devices.
We present a comprehensive theory of the Dyakonov-Shur (DS) plasma instability in current-biased graphene transistors. Using the hydrodynamic approach, we derive equations describing the DS instability in the two-dimensional electron fluid in graphene at arbitrary values of electron drift velocity. These nonlinear equations together with Maxwell's equations are used for numerical analysis of the spatial and temporal evolution of the graphene electron system after the DS instability is triggered by random current fluctuations. We analyze conditions necessary for the onset of the DS instability …
Graphene has extraordinary electronic and optical properties and holds great promise for applications in photonics and optoelectronics. Demonstrations including high-speed photodetectors, optical modulators, plasmonic devices, and ultrafast lasers have now been reported. More advanced device concepts would involve photonic elements such as cavities to control light-matter interaction in graphene. Here we report the first monolithic integration of a graphene transistor and a planar, optical microcavity. We find that the microcavity-induced optical confinement controls the efficiency and spectra…
In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even when it is sandwiched between a substrate and a gate dielectric. Field effect transistors (FETs) using a bilayer graphene channel have been fabricated with a gate length LG=450 nm. A current density in excess of 1 A/mm and DC transconductance close to 250 mS/mm are achieved for both electron and hole conductions. RF characterization is performed for the first time on this device structure, giving a current-gain cut-of…
We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain maximum frequency of about ~ 3 GHz for this specific sample. Given the strongly reduced charge noise for nanostructures on sapphire, the high stability and high performance of this material at low temperature, our MOGFETs on sapphire are well suited for a cryogenic broadband low-noise amplifier.
Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to graphene$'$s superior electron mobility. Previously it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage and therefore it was found to be difficult to disentangle these contributions in the previous studies. In this letter, we report on combined exper…
We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lateral graphene gates and an additional back gate. The tunneling coupling is a strongly nonmonotonic function of gate voltage indicating the presence of localized states in the barriers. We investigate energy scales for the tunneling gap, the resonances in the constrictions and for the Coulomb blockade resonances. From Coulomb diamond measurements in…
We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality point of GraFETs that are dependent on the fluid velocity and the ionic concentration. We show that these shifts are consistent with the variation of the local electrochemical potential of the liquid next to graphene that are caused by the fluid flow (streaming potential). Furthermore, we utilize the sensitivity of electrical transport in GraFETs to the paramete…
We prepare twist-controlled resonant tunneling transistors consisting of monolayer (Gr) and Bernal bilayer (BGr) graphene electrodes separated by a thin layer of hexagonal boron nitride (hBN). The resonant conditions are achieved by closely aligning the crystallographic orientation of the graphene electrodes, which leads to momentum conservation for tunneling electrons at certain bias voltages. Under such conditions, negative differential conductance (NDC) can be achieved. Application of in-plane magnetic field leads to electrons acquiring additional momentum during the tunneling process, whic…
Graphene field-effect transistors are widely used for development of biosensors. However, certain fundamental questions about details of their functioning are not fully understood yet. One of these questions is the presence of gate (leakage) currents in the electrolyte-gated configuration. Here, we report our observations considering causes of this phenomena on chemical vapor deposition (CVD) grown graphene. We observed that gate currents reflect currents that occur on the transistor surface similarly to a working electrode - counter electrode pair currents in an electrochemical cell. Gate cur…
By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these hetero-channels. It is shown that a finite conduction-gap can open in the strain junctions due to the strain-induced deformation of graphene bandstructure. These hetero-channels are then demonstrated to improve significantly the operation of graphene field-effect-transistors (FETs). In particular, ON/OFF current ratio can reach a value of over 10$^5$. In gra…
We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the low order sequential tunneling and co-tunneling regimes, a large magnetoresistance ratio at sufficiently low temperatures is found. In the opposite limit, when the thermal energy is larger than the charging energy, the magnetoresistance ratio is only slightly enhanced.
We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which exists in the absence of net charge currents. Furthermore, we propose as a proof of concept how these spin currents can be modulated by an electrostatic gate. Because our proposal involves nano-sized systems that function with very high speeds and in the absence of any applied bias, it is potentially useful for the development of transistors capable of combinin…
I present a compact physics-based model of the drain current, charge and capacitance of graphene field-effect transistors, of relevance for exploration of DC, AC and transient behavior of graphene based circuits. The physical framework is a field-effect model and drift-diffusion carrier transport incorporating saturation velocity effects. First, an explicit model has been derived for the drain current. Using it as a basis, explicit closed-form expressions for the charge and capacitances based on the Ward-Dutton partition scheme, covering continuosly all operation regions. The model is of speci…
We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus the external electric field. Under the application of a bias voltage VB between graphene and the metal layer in the graphene/MoS2/metal heterostructure for driving current through the van der Waals interface, the electric field across the MoS2 dielectric induces a shift in the Fermi level of graphene. When the Fermi level of graphene coincides with the Dira…
We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range by the back gate and/or a second side gate. We also find that the side gated field effect is significantly stronger by electrically floating the back gate compared to grounding the back gate, consistent with the finding from electrostatic simulation.
It is usually assumed that tunneling current is fairly independent of temperature. By performing an atomistic transport simulation, we show, to the contrary, that the subthreshold tunneling current in a graphene nanoribbon (GNR) band-to-band tunneling transistor (TFET) should show significant and non-linear temperature dependence. Furthermore, the nature of this non-linearity changes as a function of source/drain doping and vertical electric field, indicating that such non-linearity, if properly understood, may provide important insights into the tunneling phenomena. Finally, by developing a p…
The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000$~$cm$^{2}$V$^{-1}$s$^{-1}$. Our phenomenological model for contact noise due to current crowding in purely two dimensional conductors,…
We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage dependent RF resistivity of graphene can be deduced even in the presence of the electrolyte which is in direct contact with the graphene layer. The RF resistivity is found to be consistent with its DC counterpart in the full gate voltage range. Furthermore, in order to access the potential of high-frequency sensing for applications, we demonstrate time-dependen…
Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work function deference between the graphene contact and the tunneling channel material. Modulation of the bottom-graphene-contact plays an important role in determining the switching characteristic of the device. Due to the electrostatic short-channel-effects stemming from the vertical-FET structure, the output I-V characteristics do not saturate. The scaling b…
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