氢化石墨烯场效应晶体管的多尺度模拟
Simulation of hydrogenated graphene Field-Effect Transistors through a multiscale approach
摘要：
在这项工作中，我们提出了基于最近制造的100%氢化石墨烯（所谓的graphane）和理论上预测的半氢化石墨烯（即graphone）的场效应晶体管的性能分析。该方法是基于准确的计算的能带通过GW近似，随后拟合与三个最近邻（3 NN）sp3紧束缚哈密顿量，并最终用于计算弹道输运在基于功能化石墨烯的晶体管。由于大的能隙，所提出的器件具有由一维石墨烯纳米颗粒FET提供的许多优点，例如大的Ion和Ion/Ioff比、降低的带间隧穿，而没有在电路集成的禁止性光刻和图案化要求方面的相应缺点。
英文摘要：
In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor (3NN) sp3 tight-binding Hamiltonian, and finally used to compute ballistic transport in transistors based on functionalized graphene. Due to the large energy gap, the proposed devices have many of the advantages provided by one-dimensional graphene nanoribbon FETs, such as large Ion and Ion/Ioff ratios, reduced band-to-band tunneling, without the corresponding disadvantages in terms of prohibitive lithography and patterning requirements for circuit integration.
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